Renesas 70T3339S133BFI

Overview

70T3339S133BFI from Integrated Device Technology is a high-speed synchronous dual-port static RAM with 512K × 18-bit organization (9,216,000 bits), 2.5V core supply, selectable 2.5V/3.3V I/O interface per port, and industrial-grade operation up to 133MHz. It supports true simultaneous read/write access on independent left/right ports and is used in real-time packet buffering for telecom line cards and FPGA co-processor memory interfaces.

For engineers reviewing the 70T3339S133BFI datasheet, 70T3339S133BFI pinout, 70T3339S133BFI application, or 70T3339S133BFI equivalent, key selection criteria include pipelined vs. flow-through output mode timing, dual-chip-enable depth expansion capability, JTAG-compliant boundary scan support, and independent port voltage configuration via OPTL/OPTR pins.

Technical Context

The 70T3339S133BFI implements fully synchronous dual-port architecture with separate address, data, and control registers on each port-enabling 1.5ns setup and 0.5ns hold times at 200MHz (commercial grade). Its self-timed write logic minimizes cycle time dependency on external timing margins.

Each port features independent pipeline/flow-through output mode selection (PL/FTL & PL/FTR), address strobe (ADSL/ADSR), counter enable (CNTENL/CNTENR), and repeat functionality for burst address generation. Collision detection and interrupt flags (COLL/INTR, COLR/INTR) provide hardware-level arbitration between ports.

Key Specifications

Pinout & Package

70T3339S133BFI is housed in a 256-ball fine-pitch BGA (BC256 package), with 17 mm × 17 mm footprint and 1.0 mm ball pitch. Power delivery uses distributed VDD (core), VDDQL/VDDQR (I/O), and VSS pins across the array; all VDD pins must be connected to 2.5 V, and VDDQ pins configured per port's OPT setting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C331024B-133BIN, the 70T3339S133BFI uniquely supports per-port I/O voltage selection, hardware collision detection, and IEEE 1149.1 JTAG-making it the only option for safety-critical, mixed-voltage, real-time dual-access memory subsystems.

Availability

70T3339S133BFI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, avionics data recording, and FPGA-accelerated computing applications requiring stable component supply across extended product lifecycles.

Supply support for 70T3339S133BFI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70T3339S133BFI belongs to IDT's high-speed synchronous dual-port SRAM family, engineered specifically for deterministic, low-latency inter-processor and FPGA-ASIC memory sharing in real-time embedded systems.

FAQ

What is the maximum operating frequency of the 70T3339S133BFI under industrial temperature conditions?

The 70T3339S133BFI is rated for 133 MHz operation across the full industrial temperature range of −40°C to +85°C. This corresponds to a guaranteed 7.5 ns clock cycle time in pipelined mode and 25 ns in flow-through mode. The device does not support 200 MHz operation in the BC256 BGA package-only commercial-grade S200 variants in fpBGA packages achieve that speed.

How does the 70T3339S133BFI handle simultaneous access to the same memory location from both ports?

The 70T3339S133BFI implements true dual-port memory cells that permit simultaneous read/write access to identical addresses. When contention occurs, the device asserts COLL (left port) and COLR (right port) flags within 4.2 ns. These asynchronous outputs enable external logic or firmware to resolve conflicts-no internal arbitration or data corruption occurs.

Can the left and right ports of the 70T3339S133BFI operate at different I/O voltage levels?

Yes-the 70T3339S133BFI supports independent I/O voltage configuration per port via OPTL and OPTR pins. Setting OPTL = VDD configures the left port for 3.3 V I/O levels (requiring VDDQL = 3.3 V), while OPTR = VSS configures the right port for 2.5 V levels (requiring VDDQR = 2.5 V). This eliminates level shifters in heterogeneous system interfaces.

What power-saving modes does the 70T3339S133BFI support, and how much current do they draw?

The 70T3339S133BFI offers three low-power states: (1) Standby (CE0/CE1 inactive): 140–190 mA typical; (2) Full standby (CMOS-level CE inputs): 5–15 mA; (3) Sleep mode (ZZL/ZZR high): ≤15 mA. All modes retain data and require no refresh. Sleep mode disables dynamic inputs but preserves JTAG accessibility for diagnostics.

Is the 70T3339S133BFI compatible with boundary scan testing, and which standard does it follow?

Yes-the 70T3339S133BFI integrates a fully compliant IEEE 1149.1 JTAG TAP controller with TCK, TMS, TDI, TDO, and TRST pins. It supports instruction register scan, data register scan, and BYPASS mode. Boundary scan operates independently of memory function and remains active even in sleep mode (though not recommended during active sleep).