Renesas 70T3339S133BFI8

Overview

70T3339S133BFI8 from Integrated Device Technology is a high-speed synchronous dual-port static RAM with 512K × 18-bit organization, 2.5V core supply, and selectable 2.5V/3.3V I/O interface per port. It supports pipelined or flow-through output modes, features dual chip enables for depth expansion, and operates at 133MHz across industrial temperature range (–40°C to +85°C) in a 256-pin BGA package. Used in real-time packet buffering and FPGA co-processor memory interfaces.

For engineers reviewing the 70T3339S133BFI8 datasheet, 70T3339S133BFI8 pinout, 70T3339S133BFI8 application, or 70T3339S133BFI8 equivalent, key selection criteria include guaranteed 4.2ns max access time at 133MHz, independent port voltage selection via OPTL/OPTR, JTAG IEEE 1149.1 compliance, and collision/interrupt flag support for concurrent access arbitration.

Technical Context

This device implements true dual-port SRAM architecture with fully synchronous operation on both ports-each with dedicated clock (CLKL/CLKR), address (A0L–A18L / A0R–A18R), and data I/O (I/O0L–I/O17L / I/O0R–I/O17R). It uses input registers for address, control, and data to minimize setup/hold requirements, enabling 5ns cycle time in pipelined mode.

Each port supports independent I/O voltage configuration (2.5V or 3.3V) via OPTL/OPTR pins, with corresponding VDDQL/VDDQR supplies. The device includes address strobe (ADSL/ADSR), counter enable (CNTENL/CNTENR), repeat (REPEATL/REPEATR), and sleep mode (ZZL/ZZR) controls, plus interrupt (INTL/INTR) and collision detection (COLL/COLR) flags for system-level coordination.

Key Specifications

Pinout & Package

70T3339S133BFI8 is housed in a 256-pin Ball Grid Array (BGA) package with 17mm × 17mm body and 1.0mm ball pitch. All VDD pins must be connected to 2.5V; VDDQL/VDDQR must match selected I/O voltage (2.5V or 3.3V) per port; all VSS pins require solid ground connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C331024B-133BIN, the 70T3339S133BFI8 uniquely delivers true dual-port 18-bit operation with 2.5V core and flexible per-port I/O voltage - enabling direct FPGA/ASIC interfacing without level translation or arbitration overhead.

Availability

70T3339S133BFI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, avionics, and FPGA-accelerated computing applications requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.

Supply support for 70T3339S133BFI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning ICs for communications, computing, and industrial markets.

The 70T3339S133BFI8 belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for deterministic, low-latency memory sharing between heterogeneous processors, FPGAs, and ASICs in real-time embedded systems.

FAQ

What is the maximum operating frequency of the 70T3339S133BFI8?

The 70T3339S133BFI8 is rated for 133MHz operation across the industrial temperature range (–40°C to +85°C). This corresponds to a 7.5ns clock cycle time in pipelined mode (tCYC2), delivering 14Gbps aggregate bandwidth. The S133 speed grade is validated for both commercial and industrial grades, unlike the S200 variant which is commercial-only and unavailable in the 256-pin BGA package.

Does the 70T3339S133BFI8 support independent I/O voltage selection on each port?

Yes, the 70T3339S133BFI8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VDD (2.5V) configures the left port for 3.3V I/O levels with VDDQL = 3.3V; setting it to VSS (0V) selects 2.5V I/O with VDDQL = 2.5V. The same applies to the right port using OPTR and VDDQR. This eliminates external level shifters in mixed-voltage systems.

How does collision detection work on the 70T3339S133BFI8?

The 70T3339S133BFI8 asserts COLL or COLR when both ports attempt to write to the same memory location simultaneously. Detection occurs internally on every write cycle; the flag remains asserted until cleared by a subsequent read or write to that address. Propagation delay is guaranteed ≤4.2ns (tCOLS), enabling immediate system-level arbitration without software polling.

What is the purpose of the ADSL and ADSR pins on the 70T3339S133BFI8?

ADSL and ADSR are address strobe inputs that latch the current address into an internal counter, enabling burst-mode addressing. When CNTEN is active, the counter auto-increments on each clock edge - allowing sequential accesses without re-driving the full address bus. REPEATL/REPEATR can reset the counter to the last ADS-loaded address, supporting repeated access to fixed buffers.

Can the 70T3339S133BFI8 enter low-power sleep mode, and how is it controlled?

Yes, the 70T3339S133BFI8 supports sleep mode via ZZL and ZZR pins. Asserting either pin high disables dynamic circuitry (reducing current to ≤15mA), while retaining memory contents and JTAG functionality. Sleep mode recovery requires three clock cycles (tZZRC), and entry takes two cycles (tZZSC). Static inputs like PL/FT and OPT remain functional during sleep.