Renesas 70T3339S166BF

Overview

70T3339S166BF from Integrated Device Technology is a high-speed synchronous dual-port static RAM with 512K × 18-bit organization, 2.5V core supply, and selectable 2.5V/3.3V I/O interface per port. It supports pipelined or flow-through output modes, features dual chip enables for depth expansion, and delivers 3.6ns access time at 166MHz for commercial and industrial temperature ranges. It is used in real-time packet buffering and inter-processor communication where simultaneous read/write access to shared memory is required.

For engineers reviewing the 70T3339S166BF datasheet, 70T3339S166BF pinout, 70T3339S166BF application, or 70T3339S166BF equivalent, key selection criteria include dual-port timing coordination, VDDQ voltage configuration per port, sleep mode current (5–15mA), JTAG compliance (IEEE 1149.1), and BGA package compatibility with 208-pin fpBGA footprint.

Technical Context

The 70T3339S166BF implements true dual-port SRAM cells enabling concurrent access to any memory location from left and right ports. Its fully synchronous architecture uses clocked address, data, and control registers-achieving 1.5ns setup and 0.5ns hold times on all inputs at 200MHz operation.

Each port operates independently with configurable I/O voltage (2.5V or 3.3V via OPTL/OPTR pins), separate byte enables (UBL/LBL, UBR/LBR), and dedicated pipeline/flow-through mode control (PL/FTL, PL/FTR). Collision detection and interrupt flags provide hardware-level arbitration for multi-master systems.

Key Specifications

Pinout & Package

70T3339S166BF is packaged in a 208-pin fine-pitch Ball Grid Array (fpBGA) with 0.8mm ball pitch and 15mm × 15mm body size. All VDD pins require 2.5V connection; VDDQ pins must match selected I/O voltage per port (2.5V or 3.3V); VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-166AXC and AS7C35128PFS-166BIN, the 70T3339S166BF provides unique value through per-port I/O voltage flexibility, hardware collision detection, and JTAG-compliant boundary scan-enabling higher integration and test coverage in safety-critical embedded systems.

Availability

70T3339S166BF is available at Aetrix Electronics and suitable for network packet buffering, real-time signal processing, military avionics data links, and industrial PLC communication modules requiring stable component supply across extended product lifecycles.

Supply support for 70T3339S166BF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The 70T3339S166BF belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for deterministic, low-latency inter-processor communication and real-time buffering in aerospace, defense, and telecom infrastructure.

FAQ

What is the maximum operating frequency supported by the 70T3339S166BF?

The 70T3339S166BF supports up to 166MHz operation in both commercial and industrial temperature ranges. Its 6ns minimum clock cycle time (tCYC2) in pipelined mode and 3.6ns access time (tCD2) are guaranteed across −40°C to +85°C. Note that 200MHz operation is not available in the BF-208 fpBGA package variant.

How does the 70T3339S166BF handle simultaneous access to the same memory address from both ports?

The 70T3339S166BF uses true dual-port SRAM cells that permit simultaneous read/write access to identical addresses. When contention occurs, the device asserts COLL and COLR flags to signal collision; these open-drain outputs require external pull-up resistors and trigger system-level arbitration logic to resolve conflicts.

Can the left and right ports of the 70T3339S166BF operate at different I/O voltages?

Yes-the 70T3339S166BF supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VDD (2.5V) configures the left port for 3.3V I/O levels with VDDQL = 3.3V; setting OPTR to VSS (0V) configures the right port for 2.5V I/O levels with VDDQR = 2.5V. This enables mixed-voltage system interfacing.

What power-saving modes does the 70T3339S166BF support, and how are they controlled?

The 70T3339S166BF offers three power-saving states: full standby (ISB3 = 5–15mA), partial standby (ISB1/ISB2 = 140–375mA), and sleep mode (Izz = 5–15mA). Full and partial standby are controlled by CE0/CE1 logic levels; sleep mode is activated by asserting ZZL and ZZR high. Sleep mode retains memory contents while disabling dynamic inputs except JTAG.

Is the 70T3339S166BF compatible with IEEE 1149.1 JTAG boundary scan, and what pins are used?

Yes-the 70T3339S166BF fully complies with IEEE 1149.1 JTAG boundary scan. It uses dedicated pins TCK (Test Clock), TMS (Test Mode Select), TDI (Test Data In), TDO (Test Data Out), and TRST (Test Reset). JTAG remains functional even during sleep mode, though operation is not recommended while ZZL/ZZR are asserted.