Renesas 70T3339S200BC

Overview

70T3339S200BC from Integrated Device Technology is a high-speed synchronous dual-port static RAM with 512K × 18-bit organization, 2.5V core supply, and selectable 2.5V/3.3V I/O interface per port. It supports 200MHz operation (5ns cycle time), pipelined or flow-through output modes, and simultaneous read/write access on independent left/right ports - used in high-bandwidth packet buffering, FPGA co-processor memory, and telecom line-card data exchange.

For engineers reviewing the 70T3339S200BC datasheet, 70T3339S200BC pinout, 70T3339S200BC application, or 70T3339S200BC equivalent, key selection criteria include dual-port timing latency (3.4ns clock-to-data in pipelined mode), JTAG-compliant IEEE 1149.1 test support, industrial-grade temperature range (-40°C to +85°C) at 133MHz, and BGA package compatibility with depth expansion via dual chip enables.

Technical Context

The 70T3339S200BC implements true dual-port SRAM architecture with fully synchronous operation on both ports, using edge-triggered registers for address, data, and control inputs to achieve minimal setup/hold times (1.5ns/0.5ns). Its self-timed write logic enables fast cycle time without external wait-state generation.

Each port features independent power domains: fixed 2.5V ±100mV VDD for core logic and configurable VDDQ (2.5V or 3.3V) selected per port via OPTL/OPTR pins, enabling mixed-voltage system interfacing. Collision detection and interrupt flags provide real-time arbitration feedback between ports.

Key Specifications

Pinout & Package

70T3339S200BC is housed in a 256-pin Ball Grid Array (BGA) package measuring 17mm × 17mm × 1.4mm with 1.0mm ball pitch. All VDD pins require connection to 2.5V; VDDQ pins must match OPT pin configuration (3.3V if OPT = VDD, 2.5V if OPT = VSS).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-200AXC and IDT70V9369S200BG, the 70T3339S200BC uniquely combines 512K×18 capacity, per-port voltage flexibility, hardware collision detection, and IEEE 1149.1 testability - making it optimal for mixed-signal, real-time, and safety-aware embedded systems.

Availability

70T3339S200BC is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and avionics applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 70T3339S200BC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 70T3339S200BC belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for applications demanding concurrent, low-latency memory access between heterogeneous processing elements - such as FPGA-ASIC co-processing, packet switching, and real-time control systems.

FAQ

What is the maximum operating frequency of the 70T3339S200BC?

The 70T3339S200BC is rated for 200MHz operation in commercial temperature range (0°C to +70°C), delivering a 5ns clock cycle time in pipelined mode. At industrial temperatures (-40°C to +85°C), it is guaranteed up to 133MHz. This frequency applies to both left and right ports independently, supporting full-duplex memory access without inter-port timing constraints.

Does the 70T3339S200BC support mixed-voltage operation between its two ports?

Yes, the 70T3339S200BC supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VDD configures the left port for 3.3V signaling (with VDDQL = 3.3V), while OPTR = VSS configures the right port for 2.5V signaling (with VDDQR = 2.5V). This enables direct interfacing with heterogeneous devices like 3.3V FPGAs and 2.5V microcontrollers without external level shifters.

How does collision detection work on the 70T3339S200BC?

The 70T3339S200BC asserts the COLL (left) and COLR (right) outputs when both ports attempt to write to the same memory address simultaneously. These open-drain, active-low flags are generated in hardware with 3.4ns propagation delay (tCOLS) and remain asserted until the conflicting write completes. The host system uses these signals to trigger arbitration logic - for example, stalling one port or initiating retry sequences - ensuring data integrity without software polling.

What package type is used for the 70T3339S200BC?

The 70T3339S200BC is packaged in a 256-pin Ball Grid Array (BGA) with 17mm × 17mm body size and 1.0mm ball pitch. This BC256 package variant is distinct from the BF208 fpBGA option and supports the full 200MHz speed grade. Pin assignments follow IDT's standard dual-port SRAM layout, including dedicated JTAG, sleep (ZZ), and pipeline/flow-through (PL/FT) control balls.

Can the 70T3339S200BC enter low-power mode, and how is it controlled?

Yes, the 70T3339S200BC supports hardware sleep mode via the ZZL and ZZR inputs. When either pin is driven high (VIH), the corresponding port enters ultra-low-power state with current draw ≤15mA (ISB3), disabling all dynamic inputs except JTAG. Sleep mode recovery requires three clock cycles (tZZRC), and both ports can be placed in sleep independently. This feature is critical for power-constrained applications like portable avionics and battery-backed industrial controllers.