Renesas 70T3399S133BC

Overview

70T3399S133BC from Integrated Device Technology is a high-speed synchronous dual-port static RAM with 128K × 18-bit organization (2,304 kbit), 2.5V core supply, and selectable 2.5V/3.3V I/O interface per port. It supports pipelined or flow-through output modes, features dual chip enables for depth expansion, and operates at 133MHz in industrial temperature range (−40°C to +85°C) in a 256-pin BGA package. Used in real-time packet buffering and FPGA co-processor memory interfaces.

For engineers reviewing the 70T3399S133BC datasheet, 70T3399S133BC pinout, 70T3399S133BC application, or 70T3399S133BC equivalent, key selection criteria include simultaneous dual-port access latency, JTAG-compliant boundary scan support, industrial-grade 4.2ns max access time, sleep mode current ≤15mA, and independent OPT pin-controlled I/O voltage selection per port.

Technical Context

The 70T3399S133BC implements true dual-port SRAM cells enabling concurrent read/write access to the same memory location from left and right ports. Its fully synchronous architecture uses clocked address, data, and control registers-achieving 1.5ns setup and 0.5ns hold times on all inputs at 200MHz operation.

Each port supports independent configuration: OPTL/OPTR pins select 2.5V or 3.3V I/O levels; PL/FTL and PL/FTR pins configure pipelined (3.4ns tCD2) or flow-through (15ns tCYC1) output timing; and dual CE0/CE1 enable depth expansion without external logic. Collision detection and interrupt flags provide real-time inter-port coordination.

Key Specifications

Pinout & Package

70T3399S133BC is housed in a 256-pin Ball Grid Array (BGA) package measuring 17mm × 17mm × 1.4mm with 1.0mm ball pitch. All VDD pins require 2.5V connection; VDDQ pins must match OPT pin state (3.3V if OPT = VDD, 2.5V if OPT = VSS); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C33128PFSI-133, the 70T3399S133BC uniquely combines industrial temperature rating, per-port I/O voltage flexibility, IEEE 1149.1 JTAG, and hardware sleep mode-making it optimal for safety-critical, mixed-voltage, and field-serviceable designs.

Availability

70T3399S133BC is available at Aetrix Electronics and suitable for telecom line card buffering, FPGA co-processor memory, industrial motion control, and avionics data concentrators requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for 70T3399S133BC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70T3339/19/99 family was engineered specifically for deterministic, low-latency shared memory in real-time systems-emphasizing simultaneous dual-port access, flexible voltage interfaces, and robust industrial qualification.

FAQ

What is the maximum operating frequency of the 70T3399S133BC?

The 70T3399S133BC is rated for 133MHz operation in both commercial and industrial temperature ranges. Its pipelined output mode achieves a 5ns clock cycle time, supporting up to 14Gbps aggregate bandwidth. The device is not rated for 200MHz operation in the BC256 package-only the S200 speed grade in the BCG256 package supports that frequency.

Does the 70T3399S133BC support independent I/O voltage selection on each port?

Yes, the 70T3399S133BC supports independent I/O voltage selection per port using OPTL and OPTR pins. Setting OPTX to VDD (2.5V) configures that port for 3.3V I/O levels with corresponding VDDQX = 3.3V; setting OPTX to VSS (0V) configures 2.5V I/O levels with VDDQX = 2.5V. This enables direct interfacing with mixed-voltage FPGAs or ASICs without external level shifters.

How does the sleep mode function on the 70T3399S133BC?

The 70T3399S133BC enters low-power sleep mode when ZZL and ZZR are driven high. In this state, dynamic inputs are disabled (except JTAG), reducing current consumption to ≤15mA while preserving memory contents. Static inputs-including PL/FTx and OPTx-remain active, allowing wake-up configuration changes without full reinitialization. Sleep mode recovery requires three clock cycles.

What memory organization does the 70T3399S133BC implement?

The 70T3399S133BC implements a 128K × 18-bit (2,304 kbit) synchronous dual-port SRAM organization. Address lines A0–A16 are functional; A17 and A18 are no-connect for this variant. Each port provides 18-bit bidirectional I/O (I/O0–I/O17), with separate upper (I/O9–I/O17) and lower (I/O0–I/O8) byte enables for granular data access.

Is JTAG boundary scan supported on the 70T3399S133BC?

Yes, the 70T3399S133BC fully supports IEEE 1149.1 JTAG boundary scan via dedicated TCK, TMS, TDO, TDI, and TRST pins. This enables in-system test, interconnect verification, and debug access without requiring additional test points. Boundary scan operation is maintained even during sleep mode, though IDT recommends avoiding JTAG activity during sleep for reliability.