Renesas 70T3509MS133BP

Overview

70T3509MS133BP from IDT (now Renesas) is a high-speed synchronous dual-port static RAM with 1024K × 36-bit organization, 2.5V core supply, and independently configurable 2.5V/3.3V I/O interfaces per port. It supports true simultaneous read/write access to the same memory location at 133MHz, with pipelined or flow-through output modes, and is used in real-time packet buffering for telecom line cards and FPGA co-processor data exchange.

For engineers reviewing the 70T3509MS133BP datasheet, 70T3509MS133BP pinout, 70T3509MS133BP application, or 70T3509MS133BP equivalent, key selection criteria include dual-port latency tolerance (4.2ns clock-to-data in pipelined mode), independent voltage configuration per port via OPT pins, JTAG boundary-scan support, and 256-pin BGA package compatibility across IDT's 512K–36M-bit dual-port family.

Technical Context

This device implements fully synchronous dual-port architecture with separate address/data/control paths on left and right ports, each featuring input registers for address, data, byte enables, and control signals to achieve tight 1.5ns setup/0.5ns hold timing at 133MHz. The internal memory array uses true dual-port SRAM cells enabling concurrent access without arbitration logic.

Each port supports selectable pipelined (7.5ns cycle time) or flow-through (25ns cycle time) output modes controlled by PL/FT pins, and includes dedicated address counter logic with ADS strobe, CNTEN enable, and REPEAT reset-enabling burst-mode sequential addressing without external counters.

Key Specifications

Pinout & Package

256-pin Ball Grid Array (BGA), 17 mm × 17 mm body, 1.0 mm ball pitch, 1.76 mm nominal thickness (BP256 package code). All VDD pins require 2.5 V; VDDQ pins must match selected I/O voltage (2.5 V or 3.3 V) per port; all VSS pins grounded.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZI and IS61WV102436BLL-133TQLI, the 70T3509MS133BP uniquely combines 2.5V core efficiency, per-port I/O voltage flexibility, pipelined/flow-through mode selection, and integrated address counter - making it optimal for latency-constrained, mixed-voltage, and feature-rich embedded systems.

Availability

70T3509MS133BP is available at Aetrix Electronics and suitable for telecom infrastructure, FPGA-based accelerators, and industrial control systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant green packaging.

Supply support for 70T3509MS133BP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and memory solutions for automotive, industrial, and communications markets.

The 70T3509MS133BP belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for real-time, low-latency data buffering in networking equipment, test instrumentation, and FPGA-based compute acceleration platforms.

FAQ

What is the maximum operating frequency of the 70T3509MS133BP?

The 70T3509MS133BP operates at up to 133 MHz in pipelined output mode, achieving a 7.5 ns clock cycle time. In flow-through mode, the maximum frequency is lower (40 MHz, derived from 25 ns cycle time), but offers deterministic single-cycle read latency. Both modes are selectable per port using the PL/FTL and PL/FTR pins, allowing system-level optimization between throughput and predictability.

How does the 70T3509MS133BP handle mixed-voltage interfacing between ports?

The 70T3509MS133BP supports independent I/O voltage selection per port via OPTL and OPTR pins: setting OPTL to VDD (2.5 V) configures the left port for 3.3 V I/O levels with VDDQL = 3.3 V, while setting OPTR to VSS (0 V) configures the right port for 2.5 V I/O levels with VDDQR = 2.5 V. This eliminates external level shifters when interfacing with heterogeneous logic families.

Does the 70T3509MS133BP support JTAG boundary-scan testing?

Yes, the 70T3509MS133BP includes full IEEE 1149.1 JTAG boundary-scan functionality with TCK, TMS, TDI, TDO, and TRST pins. This enables in-system test, interconnect verification, and programmable configuration without requiring additional test fixtures - critical for high-reliability telecom and avionics assemblies.

What is the purpose of the REPEATL and REPEATR pins on the 70T3509MS133BP?

The REPEATL and REPEATR pins reset the internal address counter to the last valid address loaded via ADSL or ADSR, respectively. When asserted, they cause the counter to repeat the final address instead of incrementing - useful for burst writes to a fixed location or re-reading a status register without reloading the address, reducing control overhead in firmware.

Can the 70T3509MS133BP enter low-power sleep mode, and how is it controlled?

Yes, the 70T3509MS133BP supports per-port sleep mode via ZZL and ZZR pins. Asserting either pin HIGH disables dynamic inputs (except JTAG), reducing current to ≤80 mA (industrial grade). Sleep mode retains memory contents and allows fast wake-up (3 clock cycles) without data loss - ideal for power-gated subsystems in battery-backed or energy-conscious designs.