Renesas 70T3509MS133BPG

Overview

70T3509MS133BPG from IDT (now Renesas) is a high-speed synchronous dual-port SRAM with 1024K × 36-bit organization, 2.5V core supply, and independently configurable 2.5V/3.3V I/O interfaces per port. It supports true simultaneous read/write access to the same memory location, delivers 4.2ns clock-to-data-out in pipelined mode at 133MHz, and is used in real-time packet buffering for telecom line cards and FPGA co-processor data exchange.

For engineers reviewing the 70T3509MS133BPG datasheet, 70T3509MS133BPG pinout, 70T3509MS133BPG application, or 70T3509MS133BPG equivalent, key selection criteria include pipelined vs. flow-through output timing, independent port voltage configuration via OPT pins, JTAG boundary-scan support, dual-cycle deselect capability, and sleep-mode current of ≤60mA under industrial conditions.

Technical Context

This device implements a fully synchronous dual-port architecture with separate address, data, and control registers on both left and right ports, enabling minimal setup/hold times (1.5ns setup, 0.5ns hold @133MHz). Each port features independent clock (CLKL/CLKR), chip enables (CE0L/CE1L, CE0R/CE1R), byte enables (BE0–BE3), and pipeline/flow-through selection (PL/FTL/PL/FTR).

It integrates an address counter with CNTEN/REPEAT/ADSL controls for burst addressing, interrupt flag logic (INTL/INTR), and sleep-mode control (ZZL/ZZR) that disables dynamic inputs while preserving JTAG accessibility. The memory array uses true dual-port cells-no arbitration logic required-and supports self-timed writes for fast cycle time.

Key Specifications

Pinout & Package

70T3509MS133BPG is housed in a 256-ball BGA (BP256/BPG256) with 1.0 mm pitch, 17 mm × 17 mm body, and 1.76 mm nominal thickness. Power and ground balls are distributed across the array for low-impedance delivery; VDD (2.5 V core), VDDQ (2.5 V/3.3 V I/O), and VSS are separately assigned per quadrant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C331025B-133BIN, the 70T3509MS133BPG provides unique per-port voltage configurability, integrated JTAG, and deterministic pipelined timing - making it optimal for new designs requiring flexibility, testability, and low-latency deterministic access.

Availability

70T3509MS133BPG is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and test equipment applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant green packaging.

Supply support for 70T3509MS133BPG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance timing, memory, and connectivity solutions for communications, computing, and industrial markets.

The 70T3509MS133BPG belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for real-time, low-latency data exchange between heterogeneous processors, FPGAs, and ASICs in bandwidth-intensive systems.

FAQ

What is the maximum operating frequency and corresponding access time for 70T3509MS133BPG?

The 70T3509MS133BPG operates up to 133 MHz with a 7.5 ns clock cycle time in pipelined mode. Its clock-to-data-out time (tCD2) is guaranteed at ≤4.2 ns under industrial conditions. This performance is achieved with 1.5 ns setup and 0.5 ns hold times on all synchronous inputs, enabling tight-tolerance system timing closure in high-speed designs.

How does the OPT pin configure I/O voltage levels on 70T3509MS133BPG?

Each port has its own OPT pin (OPTL for left, OPTR for right). When OPTX is tied to VDD (2.5 V), the port operates at 3.3 V I/O levels and requires VDDQX = 3.3 V. When OPTX is tied to VSS (0 V), the port operates at 2.5 V I/O levels and requires VDDQX = 2.5 V. This allows mixed-voltage interfacing - for example, left port at 3.3 V to an FPGA and right port at 2.5 V to a DSP - without external level shifters.

Does 70T3509MS133BPG support JTAG boundary-scan, and what standard does it comply with?

Yes, the 70T3509MS133BPG includes full IEEE 1149.1-compliant JTAG boundary-scan functionality with TDI, TDO, TCK, TMS, and TRST pins. It supports interconnect testing, device identification, and in-system programming verification. JTAG remains operational even when ZZL/ZZR sleep mode is asserted, enabling test access during low-power states.

What is the purpose of the REPEAT and CNTEN signals in the address counter function of 70T3509MS133BPG?

CNTEN enables automatic address increment on each clock edge when asserted low; REPEAT resets the internal counter to the last valid address loaded via ADS. Together, they enable hardware-managed burst transfers - for example, circular buffer pointer management in video frame storage - without CPU intervention. A19 must be externally controlled to maintain full 1M-depth addressing across counter wrap.

What power-saving modes does 70T3509MS133BPG offer, and how do they differ?

The 70T3509MS133BPG offers three low-power states: (1) CMOS-level standby (ISB3 ≤60 mA) via CE0/CE1 voltage thresholds, (2) TTL-level standby (ISB1 ≤940 mA), and (3) sleep mode (Izz ≤80 mA) via ZZL/ZZR assertion. Sleep mode shuts down dynamic inputs but preserves JTAG; it requires 3 clock cycles to recover. All modes are independently controllable per port.