Renesas 70T3509MS133BPGI

Overview

70T3509MS133BPGI from IDT (now Renesas) is a high-speed synchronous dual-port static RAM with true dual-port architecture, 1024K × 36-bit organization (36 Mbit), 2.5V core supply, and selectable 2.5V/3.3V I/O interface per port. It supports simultaneous independent read/write access on left and right ports at 133 MHz, enabling real-time data exchange in telecom packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the 70T3509MS133BPGI datasheet, 70T3509MS133BPGI pinout, 70T3509MS133BPGI application, or 70T3509MS133BPGI equivalent, key selection criteria include pipelined vs. flow-through output mode timing, independent port voltage configuration via OPT pins, JTAG boundary-scan support, and dual-cycle deselect capability for burst-mode control logic interfacing.

Technical Context

This device implements fully synchronous dual-port SRAM architecture with separate clock domains (CLKL/CLKR), independent address strobes (ADSL/ADSR), and configurable pipeline/flow-through output modes controlled by PL/FTL and PL/FTR pins. Each port features double-buffered chip enables (CE0/CE1) and byte enables (BE0–BE3) for 9-bit byte granularity.

It integrates an on-chip address counter with repeat functionality (CNTEN/REPEAT), interrupt flag generation (INTL/INTR), and sleep mode (ZZL/ZZR) that disables dynamic inputs while preserving JTAG accessibility. The memory array delivers 9.5 Gbps aggregate bandwidth (133 MHz × 36 bits) with 4.2 ns clock-to-data-out in pipelined mode and 7.5 ns cycle time.

Key Specifications

Pinout & Package

70T3509MS133BPGI is housed in a 256-pin Ball Grid Array (BGA) package with 1.0 mm ball pitch, 17 mm × 17 mm body size, and 1.76 mm nominal thickness (BP256/BPG256). All VDD pins require 2.5 V; VDDQ pins must match selected I/O voltage (2.5 V or 3.3 V) per port based on OPT pin state.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C336100B-133BIN, the 70T3509MS133BPGI provides unique per-port I/O voltage selection, configurable output latency, integrated address counter with repeat, and IEEE 1149.1 JTAG - making it optimal for complex, mixed-voltage, high-determinism systems where timing control and testability are critical.

Availability

70T3509MS133BPGI is available at Aetrix Electronics and suitable for telecom infrastructure, FPGA-based accelerators, real-time DSP, and industrial motion control applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 70T3509MS133BPGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance timing, memory interface, and embedded processing solutions for communications, computing, and industrial markets.

The 70T3509MS133BPGI belongs to IDT's high-speed synchronous dual-port SRAM product line, engineered for deterministic, low-latency inter-processor data exchange in systems demanding concurrent access, mixed-voltage interoperability, and robust test infrastructure.

FAQ

What is the maximum operating frequency of the 70T3509MS133BPGI?

The 70T3509MS133BPGI supports a maximum clock frequency of 133 MHz in pipelined output mode, achieving a 7.5 ns clock cycle time. This performance is guaranteed across the industrial temperature range (−40°C to +85°C) with proper power supply decoupling and signal integrity layout. The 70T3509MS133BPGI maintains this speed regardless of whether I/Os are configured for 2.5 V or 3.3 V operation.

How does the 70T3509MS133BPGI handle independent I/O voltage selection per port?

The 70T3509MS133BPGI uses OPTL and OPTR pins to configure each port's I/O voltage independently: setting OPTL to VDD (2.5 V) selects 3.3 V I/O levels for the left port (requiring VDDQL = 3.3 V), while setting OPTR to VSS (0 V) selects 2.5 V I/O levels for the right port (requiring VDDQR = 2.5 V). This allows mixed-voltage system integration without level shifters.

What is the purpose of the REPEAT and CNTEN pins on the 70T3509MS133BPGI?

On the 70T3509MS133BPGI, CNTENL/CNTENR enable automatic address increment on each clock edge, while REPEATL/REPEATR reset the internal address counter to the last valid address loaded via ADSL/ADSR. This enables efficient burst-mode sequential access (e.g., FIFO fill/empty) without continuous address bus updates from the controller.

Does the 70T3509MS133BPGI support JTAG boundary-scan testing?

Yes, the 70T3509MS133BPGI includes full IEEE 1149.1 JTAG boundary-scan support with dedicated TCK, TMS, TDI, TDO, and TRST pins. This enables in-system test, interconnect verification, and debug without requiring physical probe access - a key advantage for densely populated PCBs using the 256-pin BGA package.

What power-saving modes does the 70T3509MS133BPGI offer?

The 70T3509MS133BPGI offers three power-saving states: (1) Standby via CE0/CE1 disable (ISB3 ≤ 60 mA), (2) Full standby with CMOS-level chip enables (ISB3 ≤ 60 mA), and (3) Sleep mode via ZZL/ZZR assertion (Izz ≤ 60 mA), which shuts down dynamic inputs while preserving JTAG functionality and static pin behavior.