Renesas 70T3519S133BCI

Overview

70T3519S133BCI from Integrated Device Technology is a high-speed 256K × 36-bit synchronous dual-port SRAM with true dual-port architecture enabling simultaneous read/write access to the same memory location. It operates at 133MHz (7.5ns cycle time), supports industrial temperature range (–40°C to +85°C), and features independent 2.5V core supply with selectable 3.3V/2.5V I/O interfaces per port - used in real-time packet buffering for telecom line cards and FPGA co-processor memory subsystems.

For engineers reviewing the 70T3519S133BCI datasheet, 70T3519S133BCI pinout, 70T3519S133BCI application, or 70T3519S133BCI equivalent, key selection criteria include pipelined vs. flow-through output mode timing, dual-chip-enable depth expansion capability, JTAG-compliant boundary scan support, and low-power sleep mode (ZZL/ZZR) with sub-20mA standby current at 133MHz.

Technical Context

This device implements fully synchronous dual-port operation on left and right ports with independent clocks (CLKL/CLKR), address strobes (ADSL/ADSR), and byte enables (BE0–BE3 per port). Its internal address counter supports repeat and enable control via CNTEN/REPEAT signals, enabling burst-mode sequential addressing without external logic.

The memory array uses true dual-port cells with input/output registers on all control, data, and address lines - delivering 1.5ns setup and 0.5ns hold times at 200MHz, and supporting 14Gbps aggregate bandwidth. Power management includes dynamic CE-based standby and dedicated ZZ sleep mode pins that disable dynamic inputs while preserving JTAG accessibility.

Key Specifications

Pinout & Package

70T3519S133BCI is housed in a 256-pin Ball Grid Array (BC256) package with 1.0mm ball pitch and 17mm × 17mm footprint. Power delivery uses distributed VDD (core), VDDQL/VDDQR (I/O), and VSS pins; all VDD must be connected to 2.5V, and VDDQ must match OPT pin configuration (3.3V if OPT = VDD, 2.5V if OPT = VSS).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with IDT70T3519S166BCI, the 70T3519S133BCI trades 33MHz speed for lower power and broader package availability; versus CY7C1362BV33-133BZI, it adds JTAG testability and flexible I/O voltage control - essential for heterogeneous SoC integration.

Availability

70T3519S133BCI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and radar signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for 70T3519S133BCI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications and computing markets.

The 70T35xx family was designed specifically for high-bandwidth, low-latency dual-access memory requirements in networking, test equipment, and real-time control systems - emphasizing deterministic timing, power efficiency, and mixed-signal interoperability.

FAQ

What is the maximum operating frequency of the 70T3519S133BCI?

The 70T3519S133BCI is rated for 133MHz operation in both commercial and industrial temperature ranges. This corresponds to a minimum clock cycle time of 7.5ns in pipelined mode. The device also supports 166MHz and 200MHz speed grades (S166/S200), but those variants are not identical to the 70T3519S133BCI and require separate qualification.

Does the 70T3519S133BCI support JTAG boundary scan?

Yes, the 70T3519S133BCI supports IEEE 1149.1 JTAG boundary scan with dedicated TDI, TDO, TCK, TMS, and TRST pins. This capability is confirmed in the functional block diagram and pin configuration documentation. Note that JTAG is not supported in the DR208 PQFP package variant, but the BC256 BGA package used for 70T3519S133BCI fully implements the standard.

How does the OPT pin affect I/O voltage selection on the 70T3519S133BCI?

On the 70T3519S133BCI, the OPTL and OPTR pins independently configure each port's I/O voltage level: setting OPTX to VDD (2.5V) selects 3.3V I/O operation and requires VDDQX = 3.3V; setting OPTX to VSS (0V) selects 2.5V I/O operation and requires VDDQX = 2.5V. This allows asymmetric configurations - e.g., left port at 3.3V and right port at 2.5V - without external level shifters.

What is the purpose of the ZZL and ZZR pins on the 70T3519S133BCI?

The ZZL and ZZR pins on the 70T3519S133BCI are port-specific sleep mode inputs. When asserted HIGH, they disable dynamic inputs (except JTAG signals) and reduce current consumption to ≤20mA per port. Static inputs like PL/FTx and OPTx remain active during sleep, allowing wake-up configuration retention. Sleep mode recovery requires three clock cycles after deassertion.

Can the 70T3519S133BCI perform simultaneous read and write operations on the same memory address?

Yes, the 70T3519S133BCI uses true dual-port memory cells that permit simultaneous read and write access to the same address location - one port reading while the other writes. Collision detection logic asserts COLL/COLR flags if both ports attempt writes to the same address, providing hardware-level arbitration feedback to the system controller.