Renesas 70T3519S133BCI8

Overview

70T3519S133BCI8 from Integrated Device Technology is a high-speed 256K × 36-bit synchronous dual-port SRAM with true dual-port architecture, 2.5V core supply, selectable 2.5V/3.3V I/O interface per port, and 133MHz operation (4.2ns tCD2 max) over industrial temperature range (–40°C to +85°C). It enables simultaneous read/write access to the same memory location in telecom switching fabric and real-time packet buffering applications.

For engineers reviewing the 70T3519S133BCI8 datasheet, 70T3519S133BCI8 pinout, 70T3519S133BCI8 application, or 70T3519S133BCI8 equivalent, key selection criteria include pipelined vs. flow-through output mode timing, independent port voltage configuration via OPT pins, collision/interrupt flag behavior, and BGA package compatibility with depth-expansion chip-enable logic.

Technical Context

This device implements fully synchronous dual-port operation on left and right ports with separate clock inputs (CLKL/CLKR), independent address strobes (ADSL/ADSR), and dual-cycle deselect for pipelined output mode. Each port supports byte-selectable writes (BE0–BE3) and configurable I/O voltage via dedicated OPTL/OPTR pins tied to VDD or VSS.

It integrates JTAG IEEE 1149.1 boundary-scan support (in BGA packages only), interrupt/collision detection logic with asynchronous flag outputs (INTL/INTR, COLL/COLR), and sleep-mode control (ZZL/ZZR) that disables dynamic inputs while preserving JTAG accessibility. Address counter features (CNTENL/CNTENR, REPEATL/REPEATR) enable burst-mode sequential addressing without external logic.

Key Specifications

Pinout & Package

70T3519S133BCI8 is housed in a 256-pin Ball Grid Array (BC256) package with 17mm × 17mm footprint and 1.0mm ball pitch. Power and ground balls are distributed across the array for low-inductance decoupling; VDD (2.5V core) and VDDQ (2.5V/3.3V I/O) supplies require separate filtering per port.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33256P-133JCIN, the 70T3519S133BCI8 uniquely supports per-port voltage selection, hardware collision detection, and IEEE 1149.1 JTAG - making it the only option for mixed-voltage, latency-deterministic, and testable dual-port memory subsystems.

Availability

70T3519S133BCI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and radar signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for 70T3519S133BCI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70T35xx family targets high-bandwidth, low-latency memory subsystems in systems requiring true dual-port access, independent port configuration, and deterministic timing - especially in telecom switching and real-time control.

FAQ

What is the maximum operating frequency and corresponding access time for 70T3519S133BCI8?

The 70T3519S133BCI8 operates up to 133MHz in pipelined mode, with a maximum clock-to-data valid time (tCD2) of 4.2ns. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and applies to both left and right ports independently when PL/FTX is set to VIH. The 70T3519S133BCI8 does not support 166MHz or 200MHz operation in the BC256 package.

How does the OPT pin configuration affect I/O voltage levels on 70T3519S133BCI8?

On the 70T3519S133BCI8, OPTL and OPTR pins independently configure each port's I/O voltage: tying OPTX to VDD (2.5V) selects 3.3V-compatible operation (requiring VDDQX = 3.3V), while tying OPTX to VSS (0V) selects 2.5V-compatible operation (requiring VDDQX = 2.5V). This allows asymmetric configurations - for example, left port at 3.3V and right port at 2.5V - without external level shifters.

Does 70T3519S133BCI8 support JTAG boundary-scan, and which packages include it?

Yes, the 70T3519S133BCI8 supports IEEE 1149.1 JTAG boundary-scan, but only in the 256-pin BGA (BC256) package. JTAG signals (TCK, TMS, TDI, TDO, TRST) are routed to dedicated pins in this package. The 208-pin fpBGA (BF208) and PQFP (DR208) variants do not support JTAG due to pin count limitations, as explicitly noted in the datasheet.

What is the function of the ZZL and ZZR pins on 70T3519S133BCI8, and how does sleep mode impact current draw?

The ZZL and ZZR pins on the 70T3519S133BCI8 enable per-port sleep mode: asserting either pin high disables dynamic inputs (except JTAG), reducing active current to the full-standby level (ISB3 = 5–20mA). During sleep, static inputs (PL/FTX, OPTX, ZZX themselves) remain functional. Recovery requires three clock cycles after deassertion, as specified by tZZRC = 3 cycles.

How does collision detection work on 70T3519S133BCI8, and what is the timing guarantee for flag assertion?

Collision detection on the 70T3519S133BCI8 monitors simultaneous write attempts to the same memory address across left and right ports. When detected, COLL (left) or COLR (right) asserts within 4.2ns (tCOLS max) of the violating clock edge. Flags remain asserted until both ports complete their conflicting cycles, then reset within 4.2ns (tCOLR max). This hardware mechanism eliminates software polling overhead in safety-critical applications.