Renesas 70T3519S133BF8

Overview

70T3519S133BF8 from Integrated Device Technology is a high-speed 256K × 36-bit synchronous dual-port SRAM with true dual-port architecture enabling simultaneous read/write access to the same memory location on independent left and right ports. It operates at 133MHz (7.5ns cycle time), supports selectable 2.5V or 3.3V I/O interfaces per port, and features pipelined or flow-through output modes for burst data transfer in telecom switching fabric and network packet buffering applications.

For engineers reviewing the 70T3519S133BF8 datasheet, 70T3519S133BF8 pinout, 70T3519S133BF8 application, or 70T3519S133BF8 equivalent, key selection criteria include its 256K × 36 organization, industrial-grade −40°C to +85°C operation at 133MHz, dual 2.5V/3.3V I/O voltage support via OPT pins, JTAG IEEE 1149.1 compliance, and 208-pin fpBGA (BF208) package with 0.8mm ball pitch.

Technical Context

This device implements fully synchronous dual-port operation with independent clock inputs (CLKL/CLKR), separate chip enables (CE0L/CE1L, CE0R/CE1R), and byte-enable controls (BE0–BE3 per port) for granular 9-bit write masking. Its address counter logic supports repeat addressing and ADS-triggered address loading, enabling efficient sequential burst access without external address generation.

The core uses 2.5V ±100mV supply while I/Os accept either 2.5V ±100mV or 3.3V ±150mV depending on OPTL/OPTR configuration. Sleep mode (ZZL/ZZR) reduces dynamic current to ≤15mA while preserving JTAG accessibility, and collision/interrupt flags (COLL/COLR, INTL/INTR) provide real-time arbitration feedback between ports.

Key Specifications

Pinout & Package

70T3519S133BF8 is housed in a 208-pin fine-pitch Ball Grid Array (BF208) package with 0.8mm ball pitch and 15mm × 15mm footprint. Power and ground balls are distributed across the array for low-inductance decoupling; VDD (core) and VDDQ (I/O) supplies are segregated per port.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZI and IDT70V9269L133PFGI, the 70T3519S133BF8 uniquely combines 256K × 36 density, per-port 2.5V/3.3V I/O selectability, pipelined output mode, and industrial temperature support in a compact 208-pin fpBGA-making it optimal for space-constrained, mixed-voltage embedded networking designs.

Availability

70T3519S133BF8 is available at Aetrix Electronics and suitable for telecom switch fabric, network packet buffering, and industrial PLC data exchange requiring stable component supply across extended product lifecycles.

Supply support for 70T3519S133BF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing infrastructure.

The 70T35xx family was designed specifically for high-bandwidth, low-latency dual-ported memory applications in networking, telecom, and military systems where simultaneous port access and deterministic timing are critical.

FAQ

What is the maximum operating frequency of the 70T3519S133BF8 at industrial temperature?

The 70T3519S133BF8 is rated for 133MHz operation across the full industrial temperature range of −40°C to +85°C. This is validated in the datasheet's AC Electrical Characteristics table (page 12), where tCYC2 = 7.5ns (min) and tCD2 = 4.2ns (max) are specified for S133 versions under industrial conditions. The BF208 package supports this speed grade per footnote 4 on page 12.

Does the 70T3519S133BF8 support both 2.5V and 3.3V I/O voltages simultaneously on different ports?

Yes, the 70T3519S133BF8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VDD (2.5V) configures the left port for 3.3V I/O levels with VDDQL = 3.3V, while OPTR = VSS (0V) configures the right port for 2.5V I/O with VDDQR = 2.5V. This is explicitly confirmed in Pin Names table note 2 (page 6) and DC Operating Conditions tables (pages 8–9).

What package type and pin count does the 70T3519S133BF8 use?

70T3519S133BF8 uses a 208-pin fine-pitch Ball Grid Array (fpBGA) package designated BF208, with 0.8mm ball pitch and a 15mm × 15mm body size. This is confirmed in the Pin Configuration section (page 5), where "70T3519/99/89 BF208(7) 208-Pin fpBGA" is explicitly labeled, and mechanical dimensions are given as "approximately 15mm x 15mm x 1.4mm with 0.8mm ball pitch."

How does the sleep mode (ZZL/ZZR) affect JTAG functionality on the 70T3519S133BF8?

When ZZL or ZZR is asserted (VIH), the 70T3519S133BF8 enters sleep mode and shuts off all dynamic inputs except JTAG signals (TCK, TMS, TDI, TDO, TRST). The JTAG interface remains fully operational per datasheet note 4 on page 6: "The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted." Boundary scan is therefore usable during sleep mode, though the datasheet recommends avoiding it per note 4.

Can the 70T3519S133BF8 perform simultaneous read and write operations on the same memory address?

Yes, the 70T3519S133BF8 implements true dual-port memory cells that allow simultaneous read and write access to the exact same memory location from left and right ports. This capability is stated in the Features list (page 1): "True Dual-Port memory cells which allow simultaneous access of the same memory location," and is fundamental to its architecture for applications like ping-pong buffering and real-time data sharing.