Renesas 70T3519S133BFGI8

Overview

70T3519S133BFGI8 from Integrated Device Technology is a high-speed 256K × 36-bit synchronous dual-port SRAM with true dual-port architecture enabling simultaneous read/write access to the same memory location on independent left and right ports. It operates at 133MHz (7.5ns cycle time), supports selectable 2.5V or 3.3V I/O interfaces per port, and features pipelined or flow-through output modes - used in real-time packet buffering for telecom line cards and FPGA co-processor memory interfacing.

For engineers reviewing the 70T3519S133BFGI8 datasheet, 70T3519S133BFGI8 pinout, 70T3519S133BFGI8 application, or 70T3519S133BFGI8 equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), JTAG-compliant IEEE 1149.1 testability, dual chip enables for depth expansion, and low-latency 4.2ns clock-to-data-out timing in pipelined mode.

Technical Context

This device implements fully synchronous operation on both ports with register-controlled address, data, and control inputs - delivering minimal setup/hold times (1.5ns setup, 0.5ns hold @ 200MHz) and enabling sub-10ns cycle designs. Its dual-port memory array uses dedicated input/output registers per port and supports self-timed write cycles for deterministic timing.

The architecture includes independent OPT pins per port to configure VDDQ voltage (2.5V or 3.3V), separate sleep-mode pins (ZZL/ZZR) that disable dynamic inputs while preserving JTAG accessibility, and counter/REPEAT logic for burst address generation without external sequencers.

Key Specifications

Pinout & Package

208-pin fine-pitch Ball Grid Array (BFG208) package with 15mm × 15mm footprint, 0.8mm ball pitch, and 1.4mm height. All VDD pins require 2.5V supply; VDDQ pins must match OPT pin configuration (3.3V if OPT = VDD, 2.5V if OPT = VSS).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256B-133JCIN, the 70T3519S133BFGI8 uniquely delivers per-port voltage selection, IEEE 1149.1 JTAG, and hardware-accelerated burst addressing - making it the only option supporting mixed-voltage, testable, and deterministic low-latency designs in industrial avionics and telecom.

Availability

70T3519S133BFGI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, avionics data acquisition, and FPGA co-processor memory applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70T3519S133BFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management solutions for communications, computing, and industrial markets.

The 70T3519S133BFGI8 belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for deterministic, low-latency memory sharing between heterogeneous processors, FPGAs, and ASICs in real-time embedded systems.

FAQ

What is the maximum operating frequency of the 70T3519S133BFGI8 in industrial temperature range?

The 70T3519S133BFGI8 is rated for 133MHz operation (7.5ns cycle time) across the full industrial temperature range of –40°C to +85°C. This specification is validated for both pipelined and flow-through output modes and applies to the BFG208 package variant. The 166MHz speed grade is not available in this package at industrial temperature.

Does the 70T3519S133BFGI8 support independent voltage supplies for its two ports?

Yes, the 70T3519S133BFGI8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VDD (2.5V) configures the left port for 3.3V I/O operation with VDDQL = 3.3V; setting OPTR = VSS (0V) configures the right port for 2.5V I/O with VDDQR = 2.5V. The core VDD remains fixed at 2.5V.

How does the REPEAT function work in the 70T3519S133BFGI8?

In the 70T3519S133BFGI8, asserting REPEATL or REPEATR reloads the internal address counter with the last valid address loaded via ADSL or ADSR. This enables automatic burst reads/writes without external address generation logic. The REPEAT address is not preset at power-up and must be initialized via an ADS access during system startup.

Is JTAG boundary scan supported on the 70T3519S133BFGI8 in the BFG208 package?

Yes, JTAG boundary scan compliant with IEEE 1149.1 is fully supported on the 70T3519S133BFGI8 in the BFG208 package, with dedicated TCK, TMS, TDI, TDO, and TRST pins. JTAG functionality remains active even when ZZL/ZZR sleep mode is asserted, allowing test access during low-power states.

What is the purpose of the dual chip enables (CE0/CE1) in the 70T3519S133BFGI8?

The dual chip enables CE0L/CE1L and CE0R/CE1R in the 70T3519S133BFGI8 implement a 2-input decode scheme: CE0 = LOW and CE1 = HIGH enables the port, while other combinations disable it. This allows seamless depth expansion (e.g., stacking multiple devices) without external logic gates, simplifying memory subsystem design.