Renesas 70T3519S133DR

Overview

70T3519S133DR from IDT (Integrated Device Technology) is a high-speed synchronous dual-port static RAM with 256K × 36-bit organization, 2.5V core supply, and independently configurable 2.5V/3.3V I/O interfaces per port. It supports true simultaneous read/write access to the same memory location, delivers 4.2ns clock-to-data-out in flow-through mode at 133MHz, and operates across industrial temperature range (–40°C to +85°C). It is used in real-time packet buffering for telecom line cards and FPGA co-processor data exchange.

For engineers reviewing the 70T3519S133DR datasheet, 70T3519S133DR pinout, 70T3519S133DR application, or 70T3519S133DR equivalent, key selection criteria include dual-port latency tolerance, independent voltage rail support per port, pipelined vs. flow-through output timing, JTAG debug capability, and sleep-mode current consumption under industrial thermal conditions.

Technical Context

This device implements fully synchronous dual-port architecture with separate address, data, and control registers on left and right ports-enabling concurrent access without arbitration logic. Each port features independent clock (CLKL/CLKR), chip enables (CE0L/CE1L, CE0R/CE1R), byte enables (BE0–BE3), and pipeline/flow-through selection (PL/FTL, PL/FTR).

It integrates address counter logic with CNTEN and REPEAT inputs for burst address generation, collision detection flags (COLL/COLR), interrupt signaling (INTL/INTR), and low-power sleep mode via ZZL/ZZR pins. JTAG boundary scan (IEEE 1149.1) is supported only in BGA packages-not in the DR208 PQFP variant of 70T3519S133DR.

Key Specifications

Pinout & Package

70T3519S133DR uses a 208-pin Plastic Quad Flat Pack (PQFP) package (DR208), with 0.5mm lead pitch and 28mm × 28mm footprint. All VDD pins require connection to 2.5V; VDDQ pins must match OPT pin state (3.3V if OPT = VDD, 2.5V if OPT = VSS). JTAG is not supported in this package variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZXI and IS61WV25632ALL-133BLI, the 70T3519S133DR uniquely combines per-port voltage flexibility, hardware address counters, and industrial-grade 133MHz synchronous timing-making it optimal for mixed-voltage, latency-critical embedded systems.

Availability

70T3519S133DR is available at Aetrix Electronics and suitable for telecom infrastructure, industrial PLCs, and automotive radar signal processing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70T3519S133DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70T35xx family was engineered specifically for deterministic, low-latency data exchange between heterogeneous processors-emphasizing true dual-port concurrency, flexible voltage operation, and robust industrial reliability.

FAQ

What is the maximum guaranteed operating frequency of the 70T3519S133DR under industrial temperature conditions?

The 70T3519S133DR is rated for 133MHz operation across the full industrial temperature range (–40°C to +85°C). This is verified per AC Electrical Characteristics Table 11 in the datasheet, with tCYC2 = 7.5ns (pipelined) and tCYC1 = 25ns (flow-through) as minimum cycle times. The "S133" suffix explicitly denotes this speed grade and temperature qualification.

Does the 70T3519S133DR support JTAG boundary scan testing?

No, the 70T3519S133DR does not support JTAG. As noted in Pin Configuration Note #9 and Table 1, JTAG functionality (TCK, TMS, TDI, TDO, TRST) is omitted in the DR208 PQFP package. JTAG is only available in BGA variants (e.g., BC256, BF208) of the 70T3519 family.

How does the 70T3519S133DR handle simultaneous access to the same memory location from both ports?

The 70T3519S133DR uses true dual-port memory cells that permit simultaneous read/write operations to identical addresses. When contention occurs, the device asserts COLL (left) or COLR (right) flags within 4.2ns, and the last write wins. No bus arbitration logic is required-collision status is reported asynchronously for firmware handling.

Can the left and right ports of the 70T3519S133DR operate at different I/O voltages?

Yes. The 70T3519S133DR supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VDD (2.5V) configures the left port for 3.3V I/O levels (requiring VDDQL = 3.3V), while OPTR = VSS (0V) configures the right port for 2.5V I/O (requiring VDDQR = 2.5V). This enables direct interfacing with mixed-voltage SoCs.

What power-saving features does the 70T3519S133DR offer for battery-powered or thermally constrained applications?

The 70T3519S133DR provides three low-power states: (1) Full standby (ISB3 ≤15mA) when both CE0/CE1 are deasserted at CMOS levels; (2) Partial standby (ISB2 ≤250mA) when one port is active; and (3) Sleep mode (Izz ≤15mA) activated by asserting ZZL/ZZR high-disabling all dynamic inputs except JTAG (not present in DR208).