Renesas 70T3519S166BCGI

Overview

70T3519S166BCGI from Integrated Device Technology is a high-speed 256K × 36-bit synchronous dual-port SRAM with true dual-port architecture, 2.5V core supply, selectable 2.5V/3.3V I/O interface per port, and industrial temperature support (–40°C to +85°C) at 166MHz. It enables simultaneous read/write access to the same memory location across independent left/right ports in telecom switching fabric, network packet buffering, and real-time DSP co-processing.

For engineers reviewing the 70T3519S166BCGI datasheet, 70T3519S166BCGI pinout, 70T3519S166BCGI application, or 70T3519S166BCGI equivalent, key selection criteria include pipelined vs. flow-through output mode timing, dual chip enable depth expansion capability, JTAG-compliant IEEE 1149.1 test support, and independent port voltage configuration via OPT pins.

Technical Context

This device implements fully synchronous operation on both ports with register-controlled address, data, and control inputs-enabling minimal setup/hold times (1.5ns setup, 0.5ns hold @ 200MHz) and 5ns cycle time at 200MHz. Its dual-port memory array supports concurrent access without arbitration logic, while internal address counters with ADS strobe, CNTEN enable, and REPEAT reload provide burst-addressing flexibility.

The 70T3519S166BCGI integrates interrupt and collision detection flags (INTR/COLR, INTL/COLL), sleep mode (ZZL/ZZR) for dynamic power management, and separate byte enables (BE0–BE3 per port) for granular 9-bit write masking. It supports JTAG boundary scan (TCK/TMS/TDI/TDO/TRST) compliant with IEEE 1149.1, though JTAG is omitted in PQFP variants.

Key Specifications

Pinout & Package

70T3519S166BCGI is packaged in a 256-pin Ball Grid Array (BGA) with 17mm × 17mm footprint and 1.0mm ball pitch. Power and ground balls are distributed across the array for low-impedance decoupling; VDD (2.5V core) and VDDQ (2.5V/3.3V I/O) supplies require dedicated bypassing per datasheet layout guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with 70T3519S166BCGI, the 133MHz variant trades speed for lower static power and cost, while the 70T3599S166BCGI sacrifices half the memory depth for simplified address decoding-neither offers pin-compatible upgrade paths without redesign.

Availability

70T3519S166BCGI is available at Aetrix Electronics and suitable for telecom switching fabric, network packet buffering, DSP co-processing memory, and real-time industrial control applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70T3519S166BCGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory, and RF solutions for communications, computing, and industrial markets.

The 70T35xx family was designed specifically for deterministic, low-latency dual-access memory in packet-switched networks, baseband processing, and real-time control systems demanding simultaneous read/write capability without arbitration overhead.

FAQ

What is the maximum operating frequency of the 70T3519S166BCGI at industrial temperature?

The 70T3519S166BCGI is rated for 166MHz operation across the full industrial temperature range of –40°C to +85°C. This is verified per datasheet Table 9 (AC Electrical Characteristics) and confirmed in the "Industrial temperature range (-40°C to +85°C) is available at 166MHz and 133MHz" feature list. The device achieves a 6ns clock cycle time and 3.6ns clock-to-data valid (tCD2) in pipelined mode under these conditions.

Does the 70T3519S166BCGI support JTAG boundary scan?

Yes, the 70T3519S166BCGI supports IEEE 1149.1 JTAG boundary scan via dedicated pins TCK, TMS, TDI, TDO, and TRST. This capability is explicitly stated in the features list and functional block diagram. Note that JTAG is not supported in the DR208 PQFP package variant, but the 70T3519S166BCGI uses the 256-pin BGA package (BC256/BCG256), which fully implements JTAG functionality.

How does the OPTL and OPTR pin configuration affect I/O voltage levels on the 70T3519S166BCGI?

On the 70T3519S166BCGI, OPTL sets the left port's I/O voltage: when tied to VDD (2.5V), VDDQL must be 3.3V and I/O operates at 3.3V levels; when tied to VSS (0V), VDDQL must be 2.5V and I/O operates at 2.5V levels. OPTR controls the right port identically and independently. This allows mixed-voltage interfacing-for example, left port at 3.3V to an FPGA and right port at 2.5V to a microcontroller-without external level shifters.

What is the purpose of the ZZL and ZZR pins on the 70T3519S166BCGI?

The ZZL and ZZR pins on the 70T3519S166BCGI are asynchronous sleep mode enables. When asserted high, each pin shuts off dynamic inputs on its respective port (CLKL/R, R/WL/R, etc.), reducing current draw to ≤15mA (Izz). JTAG inputs remain active during sleep mode. Static inputs-including PL/FTx, OPTx, and the ZZx pins themselves-are unaffected. Sleep mode recovery requires three clock cycles after deassertion.

Can the 70T3519S166BCGI perform simultaneous read and write operations on the same memory address?

Yes, the 70T3519S166BCGI uses true dual-port memory cells that permit simultaneous read and write access to the exact same memory location-one port reading while the other writes. This is a core architectural feature confirmed in the "True Dual-Port memory cells which allow simultaneous access of the same memory location" feature list and enables lock-free data exchange in real-time systems without arbitration logic or wait states.