Renesas 70T3519S166BCI8

Overview

70T3519S166BCI8 from Integrated Device Technology is a high-speed 256K × 36-bit synchronous dual-port SRAM with true dual-port architecture enabling simultaneous read/write access to the same memory location. It operates at 166MHz (3.6ns access time), supports independent 2.5V core and selectable 2.5V/3.3V I/O interfaces per port, and features pipelined or flow-through output modes for burst data transfer in telecom switching fabric and network packet buffering.

For engineers reviewing the 70T3519S166BCI8 datasheet, 70T3519S166BCI8 pinout, 70T3519S166BCI8 application, or 70T3519S166BCI8 equivalent, key selection criteria include industrial temperature support (−40°C to +85°C), JTAG-compliant IEEE 1149.1 testability, dual chip enables for depth expansion, and low-power sleep mode (ZZL/ZZR) with sub-20µA standby current.

Technical Context

This device implements fully synchronous operation on both left and right ports with register-controlled address, data, and control inputs-enabling minimal setup/hold times (1.5ns setup, 0.5ns hold @ 200MHz). Its dual-port memory array uses true dual-port cells, not pseudo-dual-port emulation, allowing concurrent access without arbitration logic.

The architecture includes independent address counters with ADS strobe, CNTEN enable, and REPEAT latch per port, plus byte-enable masking (BE0–BE3) for 9-bit granularity writes. Power management integrates CE0/CE1-controlled dynamic power-down and ZZ-driven deep-sleep mode that disables all dynamic inputs except JTAG.

Key Specifications

Pinout & Package

70T3519S166BCI8 is housed in a 256-pin Ball Grid Array (BC256) package with 17 mm × 17 mm footprint and 1.0 mm ball pitch. All VDD pins require 2.5 V supply; VDDQ pins must match OPT pin configuration (3.3 V if OPT = VDD, 2.5 V if OPT = VSS).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-166AXC and IDT70V27L15PF8, the 70T3519S166BCI8 provides unique value through its dual-voltage I/O flexibility, integrated JTAG, and hardware-accelerated address repeat-enabling lower system-level power, reduced component count, and faster burst data throughput in thermally demanding environments.

Availability

70T3519S166BCI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and automotive radar systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for 70T3519S166BCI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing markets.

The 70T35xx family was designed specifically for high-bandwidth, low-latency dual-access memory applications in networking equipment, base stations, and real-time control systems-emphasizing deterministic timing, industrial reliability, and flexible I/O voltage operation.

FAQ

What is the maximum operating frequency of the 70T3519S166BCI8 at industrial temperature?

The 70T3519S166BCI8 is rated for 166 MHz operation across the full industrial temperature range (−40°C to +85°C). This corresponds to a guaranteed 5 ns clock cycle time and 3.6 ns maximum access time, validated per datasheet Table 11 under ISB2 and ISB4 test conditions. The device does not support 200 MHz operation in industrial grade or in the BC256 package variant.

Does the 70T3519S166BCI8 support independent voltage selection for each port's I/O interface?

Yes, the 70T3519S166BCI8 supports independent I/O voltage selection per port using OPTL and OPTR pins. Setting OPTL = VDD (2.5 V) configures the left port for 3.3 V I/O levels with VDDQL = 3.3 V; setting OPTR = VSS (0 V) configures the right port for 2.5 V I/O levels with VDDQR = 2.5 V. This enables mixed-voltage system interfacing without external level shifters.

How does the REPEAT function work in the 70T3519S166BCI8, and what is its design impact?

The REPEAT function in the 70T3519S166BCI8 latches the last valid address loaded via ADSL or ADSR and reloads it on subsequent clock edges when REPEATL or REPEATER is asserted. This eliminates address bus overhead during sequential burst transfers-reducing control logic complexity and improving effective bandwidth in applications like packet header streaming or FFT coefficient loading.

What is the purpose of the ZZL and ZZR pins on the 70T3519S166BCI8, and how do they affect power consumption?

ZZL and ZZR are asynchronous active-high sleep mode controls. When asserted, they disable all dynamic inputs (clock, address, data, control) except JTAG signals, reducing current draw to ≤20 µA per port (Izz). This enables ultra-low-power idle states in battery-backed or energy-conscious systems-such as radar ECUs-while preserving boundary-scan testability during sleep.

Is JTAG boundary scan supported on the 70T3519S166BCI8, and what are the requirements?

Yes, the 70T3519S166BCI8 supports full IEEE 1149.1 JTAG boundary scan via dedicated TCK (10 MHz max), TMS, TDI, TDO, and TRST pins. JTAG remains functional even during ZZL/ZZR sleep mode. However, JTAG is not available in the DR208 PQFP package variant-only in BC256 and BF208 fpBGA packages like the 70T3519S166BCI8.