Renesas 70T3539MS133BC8

Overview

70T3539MS133BC8 from IDT (now Renesas) is a high-speed synchronous dual-port SRAM with true dual-port architecture, 512K × 36-bit organization, 2.5V core supply, and selectable 2.5V/3.3V I/O interfaces per port. It supports simultaneous independent read/write access to the same memory location and delivers 4.2ns clock-to-data (tCD2) in pipelined mode at 133MHz - enabling real-time data buffering in telecom line cards and packet-switching ASICs.

For engineers reviewing the 70T3539MS133BC8 datasheet, 70T3539MS133BC8 pinout, 70T3539MS133BC8 application, or 70T3539MS133BC8 equivalent, key selection criteria include industrial-temperature support (–40°C to +85°C), JTAG boundary-scan compliance, dual-cycle deselect for pipelined output, collision/interrupt flag signaling, and independent voltage configuration via OPTL/OPTR pins.

Technical Context

This device implements fully synchronous operation on both left and right ports, with register-controlled address, data, and control inputs to minimize setup/hold timing constraints. Its dual-port memory array enables concurrent access without arbitration logic, while the integrated address counter with ADS/CNTEN/REPEAT controls supports burst-mode addressing in FIFO-like applications.

The 70T3539MS133BC8 features separate byte-enable (BE0–BE3) per port for 9-bit granularity writes, dual chip enables (CE0/CE1) for seamless depth expansion, and configurable pipeline/flow-through output modes via PL/FTL and PL/FTR pins - allowing system-level trade-offs between latency (flow-through) and throughput (pipelined).

Key Specifications

Pinout & Package

70T3539MS133BC8 is housed in a 256-pin Ball Grid Array (BGA) package with 17 mm × 17 mm body size and 1.0 mm ball pitch. All VDD pins require connection to 2.5 V; VDDQ pins must match OPT pin state (3.3 V if OPT = VDD, 2.5 V if OPT = VSS). Ground (VSS) and power (VDD/VDDQ) balls are distributed across the array for low-noise operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1355BV33-133AXC and AS7C331024B-133BIN, the 70T3539MS133BC8 uniquely combines industrial-temperature 133 MHz pipelined operation, per-port I/O voltage selection, and JTAG testability - making it optimal for new designs requiring mixed-voltage, high-reliability, and debug-ready memory subsystems.

Availability

70T3539MS133BC8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and broadcast video equipment requiring stable component supply across extended product lifecycles.

Supply support for 70T3539MS133BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, analog, and embedded processing solutions for communications and industrial markets.

The 70T3539MS133BC8 belongs to IDT's high-speed synchronous dual-port SRAM product line, engineered specifically for deterministic, low-latency data exchange between co-processing elements in telecom and networking systems.

FAQ

What is the maximum operating frequency of the 70T3539MS133BC8 in industrial temperature range?

The 70T3539MS133BC8 is rated for 133 MHz operation across –40°C to +85°C. This is validated by its 7.5 ns maximum clock cycle time (tCYC2) and 4.2 ns maximum clock-to-data delay (tCD2) in pipelined mode under industrial conditions - confirmed in Table 11 of the official datasheet.

How does the 70T3539MS133BC8 handle simultaneous writes to the same memory address from both ports?

The 70T3539MS133BC8 asserts the COLL (collision) flag on the affected port when both left and right ports attempt a write to the same address. The memory cell content becomes undefined, and the device does not arbitrate - leaving resolution to external logic or firmware. This behavior is explicitly defined in the functional description and timing diagrams.

Can the left and right ports of the 70T3539MS133BC8 operate at different I/O voltages simultaneously?

Yes. The 70T3539MS133BC8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VDD configures the left port for 3.3V I/O, while OPTR = VSS sets the right port for 2.5V - as specified in Table 1 and Note 2 on page 5 of the datasheet.

Does the 70T3539MS133BC8 support boundary-scan testing?

Yes. The 70T3539MS133BC8 integrates a full IEEE 1149.1-compliant JTAG TAP controller with dedicated TCK, TMS, TDI, TDO, and TRST pins. Boundary-scan functionality is enabled by default and requires no configuration - verified in the Pin Names table (page 4) and Functional Block Diagram.

What is the purpose of the REPEAT pin on the 70T3539MS133BC8?

The REPEAT pin resets the internal address counter to the last valid address loaded via ADSx. When asserted (VIH), it causes the counter to re-output that address on subsequent clocks - enabling repeated access to a specific location without reloading. This behavior is documented in Truth Table II (page 5) and Figure 15 (page 16).