Renesas 70T3539MS133BCI

Overview

70T3539MS133BCI from IDT (now Renesas) is a high-speed synchronous dual-port static RAM with true dual-port architecture, 512K × 36-bit organization, 2.5V core supply, and selectable 2.5V/3.3V I/O interface per port. It supports simultaneous read/write access to the same memory location and delivers 4.2ns clock-to-data-out in pipelined mode at 133MHz for industrial applications including packet buffering in telecom line cards and real-time DSP co-processing.

For engineers reviewing the 70T3539MS133BCI datasheet, 70T3539MS133BCI pinout, 70T3539MS133BCI application, or 70T3539MS133BCI equivalent, key selection criteria include dual-port latency tolerance, independent voltage scaling per port, JTAG boundary-scan support, collision/interrupt flag handling, and BGA-256 thermal-mechanical compatibility in high-density routing environments.

Technical Context

The 70T3539MS133BCI implements fully synchronous operation on both left and right ports with register-controlled address, data, and control inputs-enabling minimal setup/hold times (1.7ns setup, 0.5ns hold @133MHz). Its dual-cycle deselect (DCD) logic and pipelined/flow-through output mode selection via PL/FT pins allow flexible timing alignment across multi-chip depth-expanded memory systems.

Each port features independent chip enables (CE0/CE1), byte enables (BE0–BE3), address strobe (ADS), counter enable (CNTEN), and repeat logic-supporting burst-addressed sequential reads without external counters. Collision detection and interrupt flags are generated synchronously to respective port clocks, enabling deterministic inter-port coordination in real-time control loops.

Key Specifications

Pinout & Package

70T3539MS133BCI is housed in a 256-ball BGA package (package code BC256/BCG256) with 1.0 mm ball pitch, 17 mm × 17 mm body size, and 1.4 mm height. Power and ground balls are distributed across the array for low-inductance decoupling; VDD (2.5 V core) and VDDQ (2.5 V or 3.3 V I/O) are segregated per port.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C331024B-133BIN, the 70T3539MS133BCI uniquely combines industrial temperature rating, per-port I/O voltage flexibility, JTAG testability, and hardware collision/interrupt signaling-making it optimal for deterministic real-time embedded systems where reliability and inter-processor coordination are critical.

Availability

70T3539MS133BCI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial PLCs, and test equipment requiring stable component supply across extended lifecycle commitments and volume production ramps.

Supply support for 70T3539MS133BCI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) designs high-performance memory, timing, and interface solutions for mission-critical embedded systems, with deep expertise in synchronous SRAM and real-time connectivity.

The 70T3539MS133BCI belongs to Renesas' high-speed dual-port SRAM product line, engineered specifically for deterministic inter-processor communication in industrial automation, telecom infrastructure, and test instrumentation where simultaneous access, low latency, and robust power management are essential.

FAQ

What is the maximum operating frequency of the 70T3539MS133BCI in industrial temperature range?

The 70T3539MS133BCI is rated for up to 133 MHz operation across −40°C to +85°C. This corresponds to a minimum clock cycle time of 7.5 ns in pipelined mode and guarantees 4.2 ns clock-to-data-out timing under worst-case industrial conditions, validated per AC Electrical Characteristics Table 11 in the official datasheet.

Does the 70T3539MS133BCI support independent I/O voltage selection on left and right ports?

Yes, the 70T3539MS133BCI supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VDD (2.5 V) configures the left port for 3.3 V I/O levels with VDDQL = 3.3 V; setting OPTR = VSS (0 V) configures the right port for 2.5 V I/O levels with VDDQR = 2.5 V-enabling mixed-voltage system integration without level shifters.

How does collision detection work on the 70T3539MS133BCI?

The 70T3539MS133BCI asserts COLL or COLR synchronously to the respective port clock when both ports attempt read/write access to the same memory address within one clock cycle. The flag remains asserted until cleared by a subsequent non-colliding access, enabling hardware-driven arbitration without software polling overhead-critical for real-time deterministic response.

What is the purpose of the REPEATL and REPEATR pins on the 70T3539MS133BCI?

REPEATL and REPEATR are asynchronous inputs that reset the internal address counter to the last valid address loaded via ADSL or ADSR. When asserted, they enable rapid re-access to a known memory location-useful for burst-mode DMA transfers or circular buffer implementations without external address generation logic.

Can the 70T3539MS133BCI enter low-power sleep mode while retaining memory contents?

Yes, asserting ZZL or ZZR places the corresponding port into sleep mode, disabling dynamic inputs (except JTAG) and reducing ICC to ≤25 mA. Memory contents are retained during sleep, and recovery requires exactly three clock cycles (tZZRC), as specified in AC Electrical Characteristics Table 11. Both ports can be placed in sleep mode independently.