Renesas 70T3589S133BC8

Overview

70T3589S133BC8 from Integrated Device Technology is a high-speed 256K × 36-bit synchronous dual-port SRAM with true dual-port architecture, 2.5V core supply, and independently configurable 2.5V/3.3V I/O interfaces per port. It supports simultaneous read/write access to the same memory location at up to 133MHz (4.2ns tCD2), features pipelined or flow-through output modes, and operates across industrial temperature range (–40°C to +85°C) in 256-pin BGA packaging - used in real-time packet buffering for telecom line cards.

For engineers reviewing the 70T3589S133BC8 datasheet, 70T3589S133BC8 pinout, 70T3589S133BC8 application, or 70T3589S133BC8 equivalent, key selection considerations include dual-port timing coordination, independent VDDQ/OPT voltage configuration per port, JTAG-compliant boundary scan support, and sleep-mode current optimization (5–15mA) for power-sensitive embedded systems.

Technical Context

This device implements fully synchronous operation on both left and right ports with separate clock inputs (CLKL/CLKR), enabling deterministic timing control for time-critical inter-processor communication. Its dual-chip-enable architecture (CE0X/CE1X) allows depth expansion without external logic, while counter enable (CNTENX) and repeat (REPEATX) signals support burst address generation without host intervention.

The memory integrates interrupt and collision detection flags (INTR/COLR, INTL/COLL), pipelined output mode (PL/FTX), and automatic self-timed write cycles - all synchronized to rising clock edges. Sleep mode (ZZX) disables dynamic inputs except JTAG, preserving testability during low-power states.

Key Specifications

Pinout & Package

256-pin Ball Grid Array (BC256) package with 17mm × 17mm footprint and 1.0mm ball pitch. Power distribution includes 24× VDD (2.5V core), 20× VDDQ (I/O supply), and 48× VSS ground balls. JTAG interface (TCK/TMS/TDI/TDO/TRST) is fully supported per IEEE 1149.1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and IDT70V9279L133PFI, the 70T3589S133BC8 uniquely combines industrial-temperature 133MHz operation, independent per-port I/O voltage selection, and full IEEE 1149.1 JTAG support - making it optimal for ruggedized, mixed-voltage, test-critical embedded systems.

Availability

70T3589S133BC8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and defense electronics requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for 70T3589S133BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing markets.

The 70T35xx family was designed specifically for high-bandwidth, low-latency dual-port memory applications in networking equipment, radar systems, and multi-processor architectures - emphasizing simultaneous access, flexible voltage operation, and industrial reliability.

FAQ

What is the maximum operating frequency of the 70T3589S133BC8 in industrial temperature range?

The 70T3589S133BC8 is rated for 133MHz operation across the full industrial temperature range (–40°C to +85°C). This is confirmed by AC Electrical Characteristics Table 11, which specifies tCYC2 = 7.5ns (133MHz) and tCD2 = 4.2ns max under industrial conditions. The 166MHz speed grade is not available in industrial grade for this specific part number.

Does the 70T3589S133BC8 support JTAG boundary scan?

Yes, the 70T3589S133BC8 supports IEEE 1149.1-compliant JTAG boundary scan. Pins TCK, TMS, TDI, TDO, and TRST are present and functional in the 256-pin BGA (BC256) package. JTAG is explicitly excluded only in the DR208 PQFP variant - not applicable to the BC8 suffix of 70T3589S133BC8.

How does the OPT pin affect I/O voltage levels on the 70T3589S133BC8?

On the 70T3589S133BC8, the OPTL and OPTR pins independently configure each port's I/O interface: setting OPTX to VDD (2.5V) selects 3.3V-compatible operation (requiring VDDQX = 3.3V), while setting OPTX to VSS (0V) selects 2.5V-compatible operation (requiring VDDQX = 2.5V). This enables mixed-voltage system integration without external level shifters.

What is the function of the ZZ pin on the 70T3589S133BC8?

The ZZL and ZZR pins on the 70T3589S133BC8 activate sleep mode when driven high (VIH). In this state, all dynamic inputs are disabled except JTAG signals, reducing current consumption to 5–15mA (Izz). Static inputs (PL/FTX, OPTX, and ZZX themselves) remain active, allowing wake-up via clock or control signal transitions.

Can the 70T3589S133BC8 perform simultaneous read and write operations on the same memory address?

Yes, the 70T3589S133BC8 uses true dual-port memory cells that permit simultaneous read and write access to the exact same memory location - one port reading while the other writes. This behavior is fundamental to its architecture and is explicitly stated in the Features section of the datasheet, eliminating need for external arbitration logic in shared-memory designs.