Renesas 70T3599S166BC8

Overview

70T3599S166BC8 from Integrated Device Technology is a high-speed 256K × 36-bit synchronous dual-port SRAM with true dual-port architecture enabling simultaneous read/write access to the same memory location. It operates at 166MHz (3.6ns access), supports independent 2.5V core and selectable 2.5V/3.3V I/O interfaces per port, and features pipelined or flow-through output modes for burst data transfer in telecom switching fabric.

For engineers reviewing the 70T3599S166BC8 datasheet, 70T3599S166BC8 pinout, 70T3599S166BC8 application, or 70T3599S166BC8 equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), JTAG-compliant IEEE 1149.1 testability, dual chip enables for depth expansion, and sleep mode (ZZ) for dynamic power management in real-time packet buffering systems.

Technical Context

This device implements fully synchronous operation on both left and right ports with register-controlled address, data, and control inputs-enabling minimal setup/hold times (1.5ns setup, 0.5ns hold @ 200MHz). Its internal address counter supports repeat and enable functions, allowing autonomous sequential addressing without external logic.

The memory array uses true dual-port cells with separate byte-enable controls (BE0–BE3) per port for 9-bit granularity writes, and includes collision detection and interrupt flags to manage concurrent access conflicts between ports in time-critical applications like network line cards.

Key Specifications

Pinout & Package

70T3599S166BC8 is housed in a 256-pin Ball Grid Array (BGA) package designated BC256, with 17mm × 17mm footprint and 1.0mm ball pitch. All VDD pins require connection to 2.5V; VDDQ pins must be set to 3.3V if corresponding OPT pin is tied to VDD, or 2.5V if OPT is grounded.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-166AXC and IDT70V9269S166BG, the 70T3599S166BC8 uniquely combines industrial temperature support, per-port I/O voltage selection, integrated sleep mode, and IEEE 1149.1 JTAG-making it optimal for compact, power-aware, mixed-voltage telecom and industrial embedded designs.

Availability

70T3599S166BC8 is available at Aetrix Electronics and suitable for telecom switching fabric, network packet buffering, and real-time industrial controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70T3599S166BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 70T35xx family was designed specifically for high-bandwidth, low-latency dual-access memory applications in telecom, networking, and real-time control systems-emphasizing deterministic timing, power efficiency, and mixed-signal interoperability.

FAQ

What is the maximum operating frequency of the 70T3599S166BC8?

The 70T3599S166BC8 is rated for 166MHz operation with guaranteed 3.6ns access time in pipelined mode. It supports industrial temperature range (–40°C to +85°C) at this speed and is packaged in a 256-pin BGA (BC256). The device also offers 133MHz and commercial-only 200MHz variants, but the 70T3599S166BC8 specifically targets robust 166MHz performance in demanding environments.

Does the 70T3599S166BC8 support JTAG boundary scan?

Yes, the 70T3599S166BC8 supports IEEE 1149.1 JTAG boundary scan with dedicated TDI, TDO, TCK, TMS, and TRST pins. This capability is enabled in the 256-pin BGA package (BC256) and allows full interconnect testing without physical probing. Note that JTAG is not supported in the 208-pin PQFP (DR208) variant due to pin count limitations.

How does the sleep mode (ZZ) function on the 70T3599S166BC8?

The 70T3599S166BC8 implements asynchronous sleep mode via ZZL and ZZR pins. When asserted high, each port's dynamic inputs are disabled-reducing current draw to ≤15mA while preserving JTAG functionality. Static inputs (PL/FT, OPT, and ZZ itself) remain active. Recovery requires three clock cycles after deassertion, ensuring predictable wake-up timing in power-managed systems.

Can the left and right ports of the 70T3599S166BC8 operate at different I/O voltages?

Yes, the 70T3599S166BC8 supports independent I/O voltage selection per port using OPTL and OPTR pins. Setting OPTL to VDD (2.5V) configures the left port for 3.3V I/O levels with VDDQL = 3.3V; setting OPTR to VSS (0V) configures the right port for 2.5V I/O with VDDQR = 2.5V. This eliminates external level shifters in mixed-voltage architectures.

What memory density and organization does the 70T3599S166BC8 provide?

The 70T3599S166BC8 provides 256K × 36-bit organization (9Mbit total), with 17 address lines (A0–A16) per port-A17 is no-connect for this variant. Each port has 36 bidirectional data lines (I/O0–I/O35) and four 9-bit byte enables (BE0–BE3), enabling granular 9-bit write masking without affecting adjacent bytes during partial writes.