Renesas 70T633S10BF

Overview

70T633S10BF from Integrated Device Technology is a high-speed 512K × 18-bit asynchronous dual-port static RAM with true simultaneous access on independent left/right ports, 10 ns max read cycle time, 2.5 V core supply, and selectable 2.5 V/3.3 V I/O interface per port-used in real-time inter-processor communication, FPGA co-processor buffering, and telecom packet switching systems.

For engineers reviewing the 70T633S10BF datasheet, 70T633S10BF pinout, 70T633S10BF application, or 70T633S10BF equivalent, key selection criteria include dual-port arbitration logic, RapidWrite Mode timing compliance, BUSY/INT flag behavior in MASTER/SLAVE cascading, and BGA-208 package thermal/mechanical constraints for high-density PCB layout.

Technical Context

This device implements fully asynchronous operation with separate address, control, and data buses per port, enabling concurrent read/write to identical memory locations without external arbitration. On-chip semaphore logic supports eight hardware flags addressed via A0–A2, with dedicated SEM/INT/BUSY signaling.

RapidWrite Mode eliminates R/W pulse requirement between back-to-back writes by defining write end via address transition-subject to strict tAAS ≤ 1 ns skew and tARF ≥ 1.5 V/ns slew rate. JTAG IEEE 1149.1 support is implemented only in BGA-208 and BGA-256 packages.

Key Specifications

Pinout & Package

208-ball fine-pitch Ball Grid Array (BF208) package, 0.8 mm ball pitch, 15 mm × 15 mm footprint, 1.4 mm height. All VDD pins require 2.5 V supply; VDDQ pins routed per port's OPT setting (2.5 V or 3.3 V); all VSS pins grounded.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-10BGXI and AS7C331024B-10BIN, the 70T633S10BF uniquely delivers per-port I/O voltage flexibility, on-chip arbitration, and RapidWrite Mode - making it the sole choice for deterministic, low-latency inter-processor communication in mixed-voltage embedded systems.

Availability

70T633S10BF is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, avionics display systems, and FPGA-based prototyping requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70T633S10BF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70T633S10BF belongs to IDT's high-speed asynchronous dual-port SRAM product line, engineered specifically for deterministic, low-latency inter-processor communication in real-time embedded systems.

FAQ

What is the maximum operating frequency supported by the 70T633S10BF?

The 70T633S10BF does not operate from a clock signal-it is an asynchronous device. Its performance is defined by timing parameters: maximum read cycle time (tRC) is 10 ns, corresponding to an effective 100 MHz sustained throughput under ideal conditions. Actual system bandwidth depends on address/data setup/hold times and bus protocol overhead-not a fixed clock frequency.

Can the left and right ports of the 70T633S10BF operate at different I/O voltages simultaneously?

Yes. The 70T633S10BF supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VDD (2.5 V) and OPTR = VSS (0 V) configures the left port for 3.3 V I/O levels and the right port for 2.5 V I/O levels-enabling direct interfacing with mixed-voltage FPGAs or ASICs without level shifters.

How does the BUSY signal function in MASTER versus SLAVE configuration for the 70T633S10BF?

In MASTER mode (M/S = VIH), BUSYL/BUSYR are push-pull outputs indicating port contention; in SLAVE mode (M/S = VIL), they become inputs accepting BUSY assertion from the MASTER. This bidirectional behavior enables hierarchical arbitration in cascaded configurations-critical for building 36-bit+ memory systems using multiple 70T633S10BF devices.

Is JTAG boundary scan supported on the 70T633S10BF in the BF208 package?

Yes. The 70T633S10BF in the BF208 (and BFG208) package fully supports IEEE 1149.1 JTAG boundary scan, including TCK, TMS, TDI, TDO, and TRST pins. JTAG functionality is explicitly confirmed for BF208 in the official datasheet (DSC-5670/11, page 5), enabling in-system test and debug without requiring external test fixtures.

What are the power supply requirements for VDD and VDDQ on the 70T633S10BF?

The 70T633S10BF requires a 2.5 V ±100 mV supply on all VDD pins for the core logic. VDDQ pins must be supplied at either 2.5 V or 3.3 V depending on the OPT pin setting per port: OPT = VDD → 3.3 V VDDQ; OPT = VSS → 2.5 V VDDQ. Both supplies must be stable before applying any input signals to avoid latch-up or excessive leakage.