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Renesas 70T653MS12BC8

Part No.:
70T653MS12BC8
Manufacturer:
Renesas
Category:
Memory
Package:
256-LBGA
Datasheet:
Aetrix70T653MS12BC8.pdf
Description:
IC SRAM 18MBIT PARALLEL 256CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,011

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Product details

Overview

70T653MS12BC8 from IDT (now Renesas) is a high-speed 512K × 36 asynchronous dual-port static RAM with independent left/right ports, 12 ns max access time, 2.5 V core supply, and selectable 2.5 V/3.3 V I/O interface per port-used in real-time inter-processor communication, FPGA co-processing, and telecom packet buffering.

For engineers reviewing the 70T653MS12BC8 datasheet, 70T653MS12BC8 pinout, 70T653MS12BC8 application, or 70T653MS12BC8 equivalent, key selection criteria include dual-port contention management via BUSY/SEM/INT signals, RapidWrite Mode for back-to-back writes, industrial temperature support (–40°C to +85°C), and 256-ball BGA package compatibility.

Technical Context

This device implements true dual-port SRAM architecture with fully asynchronous operation on both ports, enabling simultaneous read/write to the same memory location without arbitration logic. It integrates hardware semaphore logic, JTAG boundary scan, and independent byte-enable controls (BE0–BE3 per port) for 9-bit granularity.

Each port supports independent power domain configuration: VDD = 2.5 V ±100 mV for core logic, while VDDQ and OPT pins configure I/O voltage (2.5 V or 3.3 V) per port. Sleep mode (ZZL/ZZR) reduces current to ≤20 µA per port while preserving JTAG accessibility.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization512K × 36 bits (18,874,368 bits total), organized as two independent 512K × 18 banks per port
Access Time (max)12 ns - guarantees deterministic latency for real-time control loops and FPGA-based data pipelines
Core Supply Voltage2.5 V ±100 mV - fixed low-voltage core enables lower power and reduced noise coupling vs. 3.3 V-only SRAMs
I/O Interface FlexibilitySelectable 2.5 V or 3.3 V per port via OPTL/OPTR - allows mixed-voltage system integration without level shifters
Operating Temperature–40°C to +85°C - qualified for industrial embedded systems including base station control and motor drives
Package256-ball BGA (17 mm × 17 mm, 1.0 mm pitch) - supports high-density PCB layouts with thermal pad grounding
RapidWrite ModeEnables consecutive writes without toggling R/W or CE - eliminates timing-critical pulse generation in burst-mode controllers

Pinout & Package

70T653MS12BC8 uses a 256-ball fine-pitch BGA (package code BC256/BCG256), with dedicated left/right port signal groups, dual VDD/VSS arrays, separate VDDQL/VDDQR supplies, and JTAG test pins (TCK/TMS/TDI/TDO/TRST). Ball pitch is 1.0 mm; body size is 17 mm × 17 mm × 1.4 mm.

Pin/Terminal Circuit Role Design Meaning
A0L–A18L / A0R–A18RAddress Inputs (Left/Right)19-bit address bus per port - supports full 512K depth addressing independently
I/O0L–I/O35L / I/O0R–I/O35RBidirectional Data Bus (Left/Right)36-bit parallel I/O per port - byte-enables (BE0–BE3) allow 9-bit sub-word writes
CE0L/CE1L, CE0R/CE1RChip Enable PairsDual CE per port enables depth expansion without external logic; CE0=VIL & CE1=VIH activates port
R/WL/R/WR, OEL/OERRead/Write & Output EnableAsynchronous control - R/WL low = write, OEL low = output enabled; independent per port
BE0L–BE3L / BE0R–BE3RByte Enable InputsFour 9-bit byte masks - enable selective write/read of I/O0–8, 9–17, 18–26, 27–35 per port
SEML/SEMR, INTL/INTR, BUSYL/BUSYRSemaphore, Interrupt, Busy SignalsHardware arbitration: SEM asserts semaphore flags; INT signals event; BUSY blocks conflicting writes
ZZL/ZZRSleep Mode InputActive-high entry into ultra-low-power state (≤20 µA); preserves JTAG and interrupt functionality
VDD, VDDQL, VDDQR, VSSPower & GroundVDD = 2.5 V core; VDDQL/VDDQR = 2.5 V or 3.3 V I/O supplies; all VSS balls must be grounded

Key Features

Feature Design Value
True Dual-Port ArchitectureSimultaneous independent access to same memory location by left/right ports - eliminates software arbitration overhead in multi-CPU systems
RapidWrite ModeBack-to-back writes without pulsing R/W or CE - simplifies timing-critical burst transfers in network processors and DSPs
Per-Port I/O Voltage SelectionOPTL/OPTR pins configure VDDQL/VDDQR to 2.5 V or 3.3 V - enables direct interfacing with mixed-voltage FPGAs and microcontrollers
Hardware Semaphore LogicOn-chip semaphore flag management (8 flags, addressed via A0–A2) - prevents race conditions in shared-memory multiprocessing
Industrial Temperature Range–40°C to +85°C operation with guaranteed 12 ns access - suitable for automotive engine control and industrial PLCs
JTAG Boundary ScanIEEE 1149.1-compliant TAP controller (TCK/TMS/TDI/TDO/TRST) - enables in-system test and debug without physical probe access

Applications

Telecom Packet Buffering FPGA Co-Processing Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets between line cards and switch fabric.

IC Role / Device Role / Timing Role: Dual-port SRAM acts as zero-latency, non-blocking buffer - left port accepts ingress traffic, right port feeds egress scheduler.

Use Value: 12 ns access and BUSY-driven contention resolution ensure deterministic packet queuing under 10 Gbps line rates.

Use Scenario: Providing shared instruction/data memory between FPGA fabric and ARM Cortex-A9 hard processor subsystem.

IC Role / Device Role / Timing Role: Asynchronous dual-port RAM bridges clock domains - FPGA writes results, CPU reads outcomes without synchronization logic.

Use Value: Independent 2.5 V/3.3 V I/O per port matches FPGA bank voltages and CPU interface levels, eliminating level shifters.

Real-Time Motor Control Multicore Processor Interconnect

Use Scenario: Exchanging position feedback, PWM duty cycles, and fault status between dual safety-certified MCUs in servo drives.

IC Role / Device Role / Timing Role: Shared memory node with hardware semaphore - each MCU owns one port and uses SEM/INT for atomic flag updates.

Use Value: Industrial temperature rating and sleep mode (≤20 µA) support fanless enclosures and energy-efficient standby states.

Use Scenario: Enabling cache-coherent data exchange between two ARM Cortex-R5F cores in lockstep safety architecture.

IC Role / Device Role / Timing Role: Dual-port SRAM serves as tightly coupled shared memory - one core writes sensor fusion results, the other reads for diagnostics.

Use Value: RapidWrite Mode accelerates burst transfers of 32-byte calibration tables, reducing inter-core latency by >30% vs. standard write cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1362BV33-12BGXI3.3 V core, no RapidWrite Mode, 12 ns access, 512K × 36, 256-BGALacks per-port I/O voltage selection and hardware semaphore; requires external arbitration logicChoose when system uses only 3.3 V logic and can implement software semaphore in firmware
AS7C331024B-12BINSingle-port SRAM, 1 M × 32, 12 ns, 100-pin TQFP, 3.3 V onlyNo dual-port capability; no BUSY/SEM/INT signals; incompatible pinout and architectureOnly viable if redesign permits single-port topology and external arbitration ICs

Compared with CY7C1362BV33-12BGXI and AS7C331024B-12BIN, the 70T653MS12BC8 uniquely delivers per-port voltage flexibility, integrated semaphore logic, and RapidWrite Mode-enabling lower BOM cost, smaller PCB area, and deterministic real-time performance in asymmetric multi-processor systems.

Availability

70T653MS12BC8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and aerospace avionics requiring stable component supply across extended product lifecycles and temperature extremes.

Supply support for 70T653MS12BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70T653MS12BC8 belongs to IDT's high-speed asynchronous dual-port SRAM family, engineered specifically for deterministic, low-latency inter-processor communication in safety-critical and real-time embedded systems.

FAQ

What is the maximum operating temperature range supported by the 70T653MS12BC8?

The 70T653MS12BC8 is qualified for industrial temperature operation from –40°C to +85°C. This rating is verified per manufacturer specifications and applies across all speed grades and functional modes-including RapidWrite, semaphore access, and sleep mode-making it suitable for under-hood automotive modules and factory-floor PLCs where ambient heat exceeds commercial limits.

How does the RapidWrite Mode function in the 70T653MS12BC8?

RapidWrite Mode in the 70T653MS12BC8 allows consecutive write operations without toggling R/W, CE, or BE signals between cycles. The end of each write is defined by the address transition, not signal deactivation. This eliminates narrow pulse generation challenges and reduces control logic complexity in burst-oriented systems like packet processors-while maintaining full compliance with tWC, tDW, and tDH timing requirements.

Can the left and right ports of the 70T653MS12BC8 operate at different I/O voltages?

Yes-the 70T653MS12BC8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VSS configures the left port for 2.5 V I/O, while setting OPTR to VDD configures the right port for 3.3 V I/O. Corresponding VDDQL and VDDQR supplies must match-enabling seamless interfacing with heterogeneous logic families without external level shifters.

What is the purpose of the BUSY input signals (BUSYL/BUSYR) on the 70T653MS12BC8?

BUSYL and BUSYR are active-low inputs used for external port contention management. When asserted, they block write operations on the respective port until released-preventing data corruption during simultaneous access attempts. This complements internal semaphore logic and is essential in systems where arbitration must occur outside the device, such as in custom ASIC-based multiprocessor interconnects.

Does the 70T653MS12BC8 support JTAG boundary scan, and how is it implemented?

Yes-the 70T653MS12BC8 includes IEEE 1149.1-compliant JTAG boundary scan with dedicated TCK, TMS, TDI, TDO, and TRST pins. The TAP controller operates independently of sleep mode (ZZL/ZZR), allowing full visibility into I/O pin states and internal registers during system test-even when the core is powered down. No special initialization sequence is required beyond standard JTAG reset.

70T653MS12BC8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
256-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Dual Port, Asynchronous
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
2.4V ~ 2.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
256-CABGA (17x17)

70T653MS12BC8 FAQ

1.How can I place an order for 70T653MS12BC8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 70T653MS12BC8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 70T653MS12BC8 reliable?

The price and inventory of 70T653MS12BC8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 70T653MS12BC8 is usually 5 days.

3.What payment methods are accepted for 70T653MS12BC8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 70T653MS12BC8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 70T653MS12BC8?

70T653MS12BC8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 70T653MS12BC8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 70T653MS12BC8?

For technical support, including 70T653MS12BC8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 70T653MS12BC8 requirements.

6.How does Aetrix verify that 70T653MS12BC8 is sourced from the original manufacturer or authorized distributors?

All 70T653MS12BC8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 70T653MS12BC8 meets industry standards.

7.What is the process for return or replacement of 70T653MS12BC8?

All 70T653MS12BC8 units undergo pre-shipment inspection (PSI). If there is an issue with 70T653MS12BC8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 70T653MS12BC8 part is unused and in its original packaging.

Return procedure for 70T653MS12BC8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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