Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 70T659S10BCI8

Part No.:
70T659S10BCI8
Manufacturer:
Renesas
Category:
Memory
Package:
256-LBGA
Datasheet:
Aetrix70T659S10BCI8.pdf
Description:
IC SRAM 4.5MBIT PAR 256CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,760

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

70T659S10BCI8 from Integrated Device Technology is a high-speed 256K × 36-bit asynchronous dual-port static RAM with true independent left/right ports, 10 ns access time (commercial grade), 2.5 V core supply, and selectable 2.5 V/3.3 V I/O interface per port. It supports simultaneous read/write to the same memory location and is used in real-time inter-processor communication, FPGA co-processor buffering, and telecom packet switching systems.

For engineers reviewing the 70T659S10BCI8 datasheet, 70T659S10BCI8 pinout, 70T659S10BCI8 application, or 70T659S10BCI8 equivalent, key selection criteria include dual-port arbitration logic, RapidWrite mode timing compliance, M/S master/slave cascading capability, and industrial-grade thermal stability up to +85°C.

Technical Context

This device implements fully asynchronous dual-port architecture with on-chip semaphore signaling and port arbitration logic, enabling conflict-free concurrent access without external handshaking. Each port features independent CE0/CE1 enables, R/W control, byte enables (BE0–BE3), and dedicated interrupt/busy flags.

The 70T659S10BCI8 supports flexible voltage configuration: fixed 2.5 V core (VDD) and independently configurable I/O supplies (VDDQL/VDDQR) set via OPTL/OPTR pins to either 2.5 V or 3.3 V - allowing mixed-voltage system integration. JTAG IEEE 1149.1 support enables boundary-scan testing.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization256K × 36 bits (9,216 Kbit total); A17 is NC - 18 address lines not used
Access Time (tAA)10 ns max (commercial grade); enables 100 MHz back-to-back operation in RapidWrite mode
Core Supply Voltage2.5 V ±100 mV; fixed low-power core independent of I/O voltage selection
I/O Interface VoltageSelectable 2.5 V or 3.3 V per port via OPTL/OPTR; VDDQL/VDDQR must match selected level
Operating Temperature–40°C to +85°C (industrial grade); validated for continuous operation across full range
Package256-ball BGA (BC256); 17 mm × 17 mm × 1.4 mm body, 1.0 mm ball pitch
Power ConsumptionISB3 = 2–10 mA (full standby, CMOS inputs); IDD = 300–445 mA (both ports active, fMAX)

Pinout & Package

70T659S10BCI8 is housed in a 256-ball fine-pitch BGA (BC256 package). All VDD pins require 2.5 V; VDDQL/VDDQR must be set to 2.5 V or 3.3 V per port based on OPTL/OPTR state; all VSS pins connect to ground.

Pin/Terminal Circuit Role Design Meaning
A0L–A16LLeft port address inputs17-bit address bus for left port; A17L is NC per datasheet Note 1
A0R–A16RRight port address inputs17-bit address bus for right port; A17R is NC per datasheet Note 1
I/O0L–I/O35LLeft port bidirectional data36-bit parallel data path; BE0L–BE3L enable 9-bit byte writes
I/O0R–I/O35RRight port bidirectional data36-bit parallel data path; BE0R–BE3R enable 9-bit byte writes
CE0L, CE1L, CE0R, CE1RChip enable pairsDual CE per port allows depth expansion without external logic
R/WL, R/WRRead/write direction controlActive-low write enable; supports RapidWrite mode when held low across address transitions
OEL, OEROutput enableTri-states I/Os independently per port; required for bus sharing
BE0L–BE3L, BE0R–BE3RByte enable inputsFour 9-bit byte controls allow granular 1–36-bit writes per cycle
SEML, SEMRSemaphore enableEnables 8-bit semaphore register access (A0–A2) for inter-port synchronization
BUSYL, BUSYRBusy flagPush-pull output (non-tri-state); M/S = VIH → output (Master), M/S = VIL → input (Slave)
INTL, INTRInterrupt flagPush-pull output (non-tri-state); asserts on semaphore event or error condition
M/SMaster/Slave selectConfigures BUSY/INT direction; enables cascading >72-bit systems using IDT's Master/Slave approach
OPTL, OPTRI/O voltage optionVDD = 2.5 V → 3.3 V I/O; VSS = 0 V → 2.5 V I/O; independent per port
ZZL, ZZRSleep mode enableAsserted high disables dynamic inputs (except JTAG); reduces ISB to ≤10 mA
TCK, TMS, TDI, TDO, TRSTJTAG boundary scanFully compliant IEEE 1149.1; operates at ≤10 MHz; isolated during sleep mode

Key Features

Feature Design Value
True dual-port memory cellsEnables simultaneous, independent read/write to identical addresses - eliminates arbitration latency in real-time systems
RapidWrite ModeBack-to-back writes without pulsing R/W/CE/BEn; address transition defines cycle end - simplifies high-speed controller design
On-chip semaphore logicEight hardware semaphore flags accessible via A0–A2; enables deterministic inter-processor synchronization without software overhead
Independent I/O voltage controlOPTL/OPTR pins configure each port for 2.5 V or 3.3 V operation - supports mixed-voltage SoC/FPGA interfaces
Full port arbitration logicHardware-resolved contention on shared memory locations; no external logic required for safe multi-master access
Industrial temperature supportValidated –40°C to +85°C operation with guaranteed 10 ns access time - suitable for base station, avionics, and industrial PLCs

Applications

Telecom Packet Buffering FPGA-CPU Co-Processor Interface

Use Scenario: High-throughput line cards buffering variable-length Ethernet/IP packets between ingress and egress ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acts as zero-latency, non-blocking FIFO buffer - left port accepts packet data from PHY, right port feeds switch fabric.

Use Value: 10 ns tAA and RapidWrite mode sustain 100+ Mpacket/s throughput; semaphore flags coordinate packet ownership without CPU intervention.

Use Scenario: Real-time data exchange between Xilinx Kintex FPGA and ARM Cortex-A9 processor in radar signal processing.

IC Role / Device Role / Timing Role: Shared memory resource enabling lock-step DMA transfers - FPGA writes processed samples, CPU reads for display/logic.

Use Value: Independent 2.5 V/3.3 V I/O per port matches FPGA bank voltage and CPU bus levels; M/S cascading extends to 72-bit word width.

Industrial PLC Memory Expansion Avionics Display System Frame Buffer

Use Scenario: Deterministic I/O mapping and ladder logic execution in safety-critical programmable logic controllers.

IC Role / Device Role / Timing Role: Dual-port RAM stores real-time I/O image - one port updated by fieldbus controller, second port scanned by CPU.

Use Value: –40°C to +85°C rating ensures reliability in uncontrolled cabinet environments; BUSY/INT flags guarantee atomic read-modify-write cycles.

Use Scenario: Graphics frame buffer for HUD (Head-Up Display) rendering in commercial aircraft cockpit systems.

IC Role / Device Role / Timing Role: Left port receives pixel data from GPU at 60 Hz, right port streams to LVDS serializer - synchronized via semaphore handshake.

Use Value: JTAG testability meets DO-254 requirements; low ISB3 current (<10 mA) minimizes thermal load in sealed display enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1362BV33-10BGXI3.3 V core (not 2.5 V); 16-bit × 2 banks; no RapidWrite mode; 10 ns tAA sameRequires level-shifting for 2.5 V core systems; lacks semaphore logic and M/S cascadingChoose only if 3.3 V core supply is available and semaphore-free designs are acceptable
AS7C33256P-10TINSingle-port only; 32K × 36 organization; 3.3 V I/O only; no JTAG or sleep modeCannot support concurrent access; requires external arbitration logic for multi-processor useUse only in cost-sensitive, non-real-time applications where dual-port functionality is unnecessary

Compared with CY7C1362BV33-10BGXI and AS7C33256P-10TIN, the 70T659S10BCI8 uniquely delivers 2.5 V core efficiency, hardware semaphore support, and RapidWrite timing - making it the only option for deterministic, low-latency inter-processor memory sharing in industrial and aerospace systems.

Availability

70T659S10BCI8 is available at Aetrix Electronics and suitable for telecom packet buffering, FPGA-CPU co-processor interfacing, and industrial PLC memory expansion requiring stable component supply across extended product lifecycles.

Supply support for 70T659S10BCI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The 70T659S10BCI8 belongs to IDT's high-speed asynchronous dual-port SRAM product line, designed specifically for deterministic, low-latency inter-processor communication in real-time embedded systems where concurrent access and hardware synchronization are critical.

FAQ

What is the function of the M/S pin on the 70T659S10BCI8?

The M/S (Master/Slave) pin configures the directionality of the BUSY and INT signals. When M/S = VIH, BUSYL/BUSYR and INTL/INTR operate as push-pull outputs (Master mode); when M/S = VIL, they become inputs (Slave mode). This enables daisy-chained configurations where one 70T659S10BCI8 acts as master coordinating multiple slave devices in wide-memory systems.

Does the 70T659S10BCI8 support both 2.5 V and 3.3 V I/O voltages simultaneously?

Yes - the 70T659S10BCI8 supports independent I/O voltage selection per port. OPTL sets left-port I/O voltage (2.5 V or 3.3 V), and OPTR sets right-port I/O voltage. VDDQL and VDDQR must be supplied at the corresponding level. The core VDD remains fixed at 2.5 V ±100 mV regardless of I/O configuration.

How does RapidWrite Mode work on the 70T659S10BCI8?

RapidWrite Mode allows consecutive write operations without toggling R/W, CE, or BE signals. The write cycle ends on the *next* address transition, not on R/W deassertion. This eliminates narrow pulse generation challenges and sustains 100 MHz throughput. tDW and tDH are referenced to the ending address edge, and tAS/tWR apply only when switching between read and write modes.

Is A17 used as an address line on the 70T659S10BCI8?

No - A17L and A17R are No Connect (NC) pins on the 70T659S10BCI8, as explicitly stated in datasheet Notes 1 and 4. The device implements 256K × 36 organization using only A0–A16 (17 address lines), resulting in 131,072 words. This distinguishes it from the 128K × 36 variant (70T651) which uses A0–A16 but maps differently.

What is the purpose of the semaphore feature in the 70T659S10BCI8?

Each port of the 70T659S10BCI8 includes eight hardware semaphore flags accessible via A0–A2. These flags provide atomic, lock-free inter-port synchronization - for example, signaling "data ready" or "buffer free" without CPU polling. Semaphore access requires CE = VIH and SEM = VIL, and is fully supported in both commercial and industrial temperature grades.

70T659S10BCI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
256-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Dual Port, Asynchronous
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.4V ~ 2.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
256-CABGA (17x17)

70T659S10BCI8 FAQ

1.How can I place an order for 70T659S10BCI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 70T659S10BCI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 70T659S10BCI8 reliable?

The price and inventory of 70T659S10BCI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 70T659S10BCI8 is usually 5 days.

3.What payment methods are accepted for 70T659S10BCI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 70T659S10BCI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 70T659S10BCI8?

70T659S10BCI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 70T659S10BCI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 70T659S10BCI8?

For technical support, including 70T659S10BCI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 70T659S10BCI8 requirements.

6.How does Aetrix verify that 70T659S10BCI8 is sourced from the original manufacturer or authorized distributors?

All 70T659S10BCI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 70T659S10BCI8 meets industry standards.

7.What is the process for return or replacement of 70T659S10BCI8?

All 70T659S10BCI8 units undergo pre-shipment inspection (PSI). If there is an issue with 70T659S10BCI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 70T659S10BCI8 part is unused and in its original packaging.

Return procedure for 70T659S10BCI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

70T659S10BCI8 Tags

  • 70T659S10BCI8
  • 70T659S10BCI8 PDF
  • 70T659S10BCI8 Datasheet
  • 70T659S10BCI8 Specifications
  • 70T659S10BCI8 Images
  • Renesas
  • Renesas 70T659S10BCI8
  • Buy 70T659S10BCI8
  • 70T659S10BCI8 Price
  • 70T659S10BCI8 Distributor
  • 70T659S10BCI8 Supplier
  • 70T659S10BCI8 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER