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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 70T659S10DR

Name: 70T659S10DR
Brand: Renesas
SKU: 70T659S10DR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 70T659S10DR

Manufacturer:: Renesas

Category:: Memory

Package:: 208-BFQFP

Datasheet:: 70T659S10DR.pdf

Description:: IC SRAM 4.5MBIT PARALLEL 208PQFP

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Product details

Overview

70T659S10DR from Integrated Device Technology is a high-speed 256K × 36-bit asynchronous dual-port static RAM with independent left/right ports, 10 ns read cycle time (commercial grade), 2.5 V core supply, and selectable 2.5 V/3.3 V I/O interface per port. It supports true simultaneous access to the same memory location and is used in real-time inter-processor communication, FPGA co-processing buffers, and telecom packet buffering.

For engineers reviewing the 70T659S10DR datasheet, 70T659S10DR pinout, 70T659S10DR application, or 70T659S10DR equivalent, key selection criteria include dual-port arbitration logic, RapidWrite mode timing, M/S master/slave cascading capability, industrial temperature support (–40°C to +85°C), and 208-pin PQFP package compatibility with legacy board layouts.

Technical Context

This device implements fully asynchronous dual-port architecture with on-chip arbitration logic and hardware semaphore signaling across ports. Each port has independent CE0/CE1 enables, R/W control, byte enables (BE0–BE3), and separate OPT-selectable I/O voltage domains (2.5 V or 3.3 V).

The 70T659S10DR supports RapidWrite mode for back-to-back writes without toggling R/W between cycles, reducing system timing overhead. Its BUSY/INT flags operate as non-tri-state totem-pole outputs, and JTAG IEEE 1149.1 compliance enables boundary-scan testing during production and debug.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	256K × 36 bits (9,216 Kbit total); supports 72-bit+ expansion via Master/Slave cascading
Access Time (tAA)	10 ns max (commercial grade); enables tight-timing inter-processor handshake in real-time systems
Core Supply	2.5 V ±100 mV; fixed core voltage simplifies power rail design and decoupling
I/O Voltage Support	Selectable 2.5 V or 3.3 V per port via OPTL/OPTR pins; allows mixed-voltage system integration
Operating Temperature	–40°C to +85°C (industrial grade); validated for deployment in base station, industrial PLC, and avionics edge nodes
Package	208-pin plastic quad flat pack (PQFP); 28 mm × 28 mm body, compatible with standard reflow profiles
Power Management	ZZL/ZZR sleep mode inputs reduce standby current to ≤10 mA; JTAG remains active during sleep

Pinout & Package

70T659S10DR is housed in a 208-pin PQFP (DR-208) package with 0.5 mm lead pitch and 28 mm × 28 mm footprint. Pin functions are symmetrically organized for left (L) and right (R) ports, including dual address buses (A0L–A17L, A0R–A17R), 36-bit bidirectional I/Os per port (I/O0L–I/O35L, I/O0R–I/O35R), and dedicated control signals (CE0L/CE1L, CE0R/CE1R, R/WL/R/WR, OEL/OER, BE0L–BE3L, BE0R–BE3R).

Pin/Terminal	Circuit Role	Design Meaning
CE0L, CE1L / CE0R, CE1R	Chip Enable (dual per port)	Enables port access only when CE0 = L and CE1 = H; supports depth expansion without external logic
R/WL, R/WR	Read/Write Control	Active-low write enable; RapidWrite mode allows sustained low state across consecutive writes
OEL, OER	Output Enable	Controls tri-state output drivers; required for bus sharing in multi-device memory subsystems
BE0L–BE3L / BE0R–BE3R	Byte Enable (9-bit groups)	Enables 9-bit sub-word writes (e.g., I/O0–I/O8, I/O9–I/O17); supports 8-bit/16-bit peripheral interfacing
M/S	Master/Slave Select	Configures BUSY flag behavior: output when M/S = VIH (Master), input when M/S = VIL (Slave)
SEML, SEMR	Semaphore Enable	Activates 8-bit semaphore register access (A0–A2 address space) for inter-port synchronization
INTL, INTR	Interrupt Flag	Open-drain-compatible totem-pole output; asserts on semaphore event or error condition
ZZL, ZZR	Sleep Mode Input	Disables dynamic inputs (except JTAG) to reduce ICC to ≤10 mA; retains data in SRAM array

Key Features

Feature	Design Value
True Dual-Port Architecture	Simultaneous independent read/write to identical addresses on left and right ports-no arbitration delay or collision handling required
RapidWrite Mode	Eliminates need to pulse R/W between consecutive writes; reduces minimum write cycle interval to tWC = 10 ns
Per-Port I/O Voltage Selection	OPTL/OPTR pins configure each port for 2.5 V or 3.3 V operation-enables direct connection to mixed-voltage FPGAs or ASICs
Hardware Semaphore Logic	On-die 8-bit semaphore register (addressed via A0–A2) with atomic read/write-replaces external lock controllers in multi-CPU designs
JTAG Boundary-Scan Support	Fully compliant with IEEE 1149.1; enables in-system test of interconnects without requiring functional memory access
Industrial Temperature Range	Validated operation from –40°C to +85°C with full AC/DC specs-suitable for uncooled outdoor telecom and rail infrastructure

Applications

Telecom Packet Buffering	FPGA Co-Processing Interface
Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in line cards where ingress and egress paths must operate concurrently without contention. IC Role / Device Role / Timing Role: Dual-port SRAM acts as zero-latency shared buffer between MAC and PHY layers; left port handles RX, right port handles TX. Use Value: Eliminates FIFO latency and external arbitration logic; 10 ns access ensures line-rate buffering at 10 Gbps with minimal jitter.	Use Scenario: Providing high-bandwidth, low-latency memory for FPGA-based digital signal processors performing real-time filtering or FFT operations. IC Role / Device Role / Timing Role: Left port interfaces FPGA fabric for burst writes; right port feeds DSP engine for parallel reads-both synchronized via BUSY/SEM signals. Use Value: Enables deterministic memory access without stalling the FPGA pipeline; RapidWrite mode sustains >90% write utilization under burst load.
Multi-Core Processor Intercommunication	Industrial PLC Data Exchange
Use Scenario: Shared memory region between two ARM Cortex-A cores running independent real-time OS instances in safety-critical control systems. IC Role / Device Role / Timing Role: Acts as mailbox and scratchpad; semaphores coordinate access to critical sections; M/S configuration enables master-slave handshaking. Use Value: Hardware semaphore eliminates software spinlocks; guaranteed atomicity prevents race conditions in sub-microsecond response loops.	Use Scenario: Exchanging sensor acquisition data and actuator commands between PLC CPU and motion controller over deterministic fieldbus links. IC Role / Device Role / Timing Role: Left port buffers analog input scans; right port queues motion profile updates; INTL/INTR flags signal data readiness. Use Value: Industrial temp rating and robust DC specs ensure reliable operation in factory-floor environments with wide ambient swings and EMI.

Telecom Packet Buffering

FPGA Co-Processing Interface

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in line cards where ingress and egress paths must operate concurrently without contention.

IC Role / Device Role / Timing Role: Dual-port SRAM acts as zero-latency shared buffer between MAC and PHY layers; left port handles RX, right port handles TX.

Use Value: Eliminates FIFO latency and external arbitration logic; 10 ns access ensures line-rate buffering at 10 Gbps with minimal jitter.

Use Scenario: Providing high-bandwidth, low-latency memory for FPGA-based digital signal processors performing real-time filtering or FFT operations.

IC Role / Device Role / Timing Role: Left port interfaces FPGA fabric for burst writes; right port feeds DSP engine for parallel reads-both synchronized via BUSY/SEM signals.

Use Value: Enables deterministic memory access without stalling the FPGA pipeline; RapidWrite mode sustains >90% write utilization under burst load.

Multi-Core Processor Intercommunication

Industrial PLC Data Exchange

Use Scenario: Shared memory region between two ARM Cortex-A cores running independent real-time OS instances in safety-critical control systems.

IC Role / Device Role / Timing Role: Acts as mailbox and scratchpad; semaphores coordinate access to critical sections; M/S configuration enables master-slave handshaking.

Use Value: Hardware semaphore eliminates software spinlocks; guaranteed atomicity prevents race conditions in sub-microsecond response loops.

Use Scenario: Exchanging sensor acquisition data and actuator commands between PLC CPU and motion controller over deterministic fieldbus links.

IC Role / Device Role / Timing Role: Left port buffers analog input scans; right port queues motion profile updates; INTL/INTR flags signal data readiness.

Use Value: Industrial temp rating and robust DC specs ensure reliable operation in factory-floor environments with wide ambient swings and EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress CY7C1362BV33	256K × 32-bit, 12 ns access, 3.3 V core/I/O, no per-port voltage select, no RapidWrite mode	Lacks M/S cascading and hardware semaphore; requires external logic for 72-bit expansion	Choose when 32-bit bus width suffices and system uses only 3.3 V logic; not drop-in compatible due to pinout and feature gaps
Renesas R1EX25616AS-10	256K × 16-bit, 10 ns access, 3.3 V only, no JTAG, no semaphore logic, PQFP-100 package	Half data width; requires four devices for 36-bit equivalence; no inter-port sync primitives	Consider only for cost-sensitive, low-complexity designs where software-managed semaphores are acceptable

Compared with CY7C1362BV33 and R1EX25616AS-10, the 70T659S10DR delivers unique value through per-port I/O voltage flexibility, integrated semaphore registers, and RapidWrite timing-enabling simpler, higher-performance dual-processor architectures without external glue logic.

Availability

70T659S10DR is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and embedded computing applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade reliability.

Supply support for 70T659S10DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning ICs for communications and computing markets.

The 70T659S10DR belongs to IDT's high-speed dual-port SRAM product line, designed specifically for deterministic, low-latency inter-processor communication in real-time embedded systems where concurrent access and hardware synchronization are critical.

FAQ

What is the maximum operating frequency supported by the 70T659S10DR?

The 70T659S10DR does not operate at a clock frequency-it is an asynchronous SRAM. Its performance is defined by access times: 10 ns maximum address access time (tAA) and 10 ns read cycle time (tRC) under commercial conditions. These values determine the fastest achievable random-access throughput without clocking constraints.

Does the 70T659S10DR support both 2.5 V and 3.3 V I/O on the same device?

Yes-the 70T659S10DR supports independent I/O voltage selection per port via OPTL and OPTR pins. One port can be configured for 2.5 V operation while the other runs at 3.3 V, enabling seamless interfacing with mixed-voltage SoCs, FPGAs, or legacy peripherals without level shifters.

How does RapidWrite mode function in the 70T659S10DR?

In RapidWrite mode, the 70T659S10DR allows consecutive write operations without toggling R/W, CE, or BE between cycles. The end of each write is determined by the next address transition-not R/W deassertion-reducing timing overhead and enabling sustained 10 ns write cycles in burst scenarios.

Can the 70T659S10DR be used in industrial temperature environments?

Yes-the 70T659S10DR is qualified for industrial temperature operation from –40°C to +85°C, with full AC and DC specifications guaranteed across this range. This makes it suitable for deployment in base stations, motor drives, and railway signaling equipment.

What is the purpose of the M/S pin on the 70T659S10DR?

The M/S (Master/Slave) pin configures BUSY flag behavior: when pulled high (VIH), BUSYL/BUSYR become output flags indicating local port contention; when pulled low (VIL), they serve as input flags from a cascaded slave device-enabling hierarchical arbitration in multi-chip memory systems.

70T659S10DR Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 208-BFQFP

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Dual Port, Asynchronous

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 10ns

Access Time:: 10 ns

Voltage - Supply:: 2.4V ~ 2.6V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 208-PQFP (28x28)

70T659S10DR FAQ

1.How can I place an order for 70T659S10DR through Aetrix?

Please submit a Request for Quotation (RFQ) for 70T659S10DR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 70T659S10DR reliable?

The price and inventory of 70T659S10DR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 70T659S10DR is usually 5 days.

3.What payment methods are accepted for 70T659S10DR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 70T659S10DR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 70T659S10DR?

70T659S10DR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 70T659S10DR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 70T659S10DR?

For technical support, including 70T659S10DR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 70T659S10DR requirements.

6.How does Aetrix verify that 70T659S10DR is sourced from the original manufacturer or authorized distributors?

All 70T659S10DR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 70T659S10DR meets industry standards.

7.What is the process for return or replacement of 70T659S10DR?

All 70T659S10DR units undergo pre-shipment inspection (PSI). If there is an issue with 70T659S10DR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 70T659S10DR part is unused and in its original packaging.

Return procedure for 70T659S10DR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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