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Renesas 70T659S12DR

Part No.:
70T659S12DR
Manufacturer:
Renesas
Category:
Memory
Package:
208-BFQFP
Datasheet:
Aetrix70T659S12DR.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 208PQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,926

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Product details

Overview

70T659S12DR from Integrated Device Technology is a high-speed 256K × 36-bit asynchronous dual-port static RAM with independent left/right ports, 12 ns maximum access time, 2.5 V core supply, and selectable 2.5 V/3.3 V I/O interface per port. It supports true simultaneous read/write to the same memory location and is used in real-time inter-processor communication, network packet buffering, and FPGA co-processor memory subsystems.

For engineers reviewing the 70T659S12DR datasheet, 70T659S12DR pinout, 70T659S12DR application, or 70T659S12DR equivalent, key selection criteria include dual-port arbitration logic, RapidWrite mode timing compliance, M/S master/slave cascading capability, and industrial-grade –40°C to +85°C operation in the DR-208 PQFP package.

Technical Context

The 70T659S12DR implements fully asynchronous dual-port architecture with on-chip arbitration logic that resolves contention between left and right ports without external logic. Each port has independent CE0/CE1 enables, R/W control, byte enables (BE0–BE3), and semaphore/interrupt flags (SEML/SEMR, INTL/INTR, BUSYL/BUSYR).

It features hardware semaphore support for inter-processor synchronization, JTAG IEEE 1149.1 boundary-scan testability, and sleep mode (ZZL/ZZR) reducing current to ≤10 mA. The OPTL/OPTR pins configure per-port I/O voltage (2.5 V or 3.3 V), while VDD remains fixed at 2.5 V ±100 mV.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization256K × 36 bits (9,216 Kbit total); A17 is NC - 18 address lines not used
Access Time (tAA)12 ns max - guarantees full-speed operation at 83.3 MHz read cycle rate
Core Supply Voltage2.5 V ±100 mV - fixed low-voltage core enabling reduced power and thermal design margin
I/O Interface VoltageSelectable 2.5 V or 3.3 V per port via OPTL/OPTR - enables mixed-voltage system integration
Operating Temperature–40°C to +85°C - qualified for industrial environments without derating
Package208-pin plastic quad flat pack (PQFP), 28 mm × 28 mm × 3.5 mm - compatible with standard surface-mount reflow
Standby Current (ISB3)2–20 mA - ultra-low full-standby power when both chip enables inactive and inputs at CMOS levels

Pinout & Package

70T659S12DR is housed in a 208-pin PQFP (DR-208) package with 0.65 mm pitch, body size 28 mm × 28 mm × 3.5 mm. All VDD pins require 2.5 V; VDDQL/VDDQR must match OPTL/OPTR configuration (2.5 V if OPT = VSS, 3.3 V if OPT = VDD). A17L and A17R are no-connects per datasheet Note 1.

Pin/Terminal Circuit Role Design Meaning
CE0L / CE0RChip Enable 0 (Left/Right)Primary enable - both CE0X = VIL and CE1X = VIH required for port activation
R/WL / R/WRRead/Write Control (Left/Right)Active-low write; high = read or high-Z output - controls data direction per port
BE0L–BE3L / BE0R–BE3RByte Enables (9-bit groups)Independent 9-bit write masking - enables partial writes without read-modify-write overhead
SEML / SEMRSemaphore EnableActivates 8-bit semaphore register access (A0–A2 address space) for inter-processor signaling
BUSYL / BUSYRBusy FlagPush-pull output (Master) or input (Slave) - indicates port contention during simultaneous access
M/SMaster/Slave SelectVIL = Slave (BUSY input); VIH = Master (BUSY output) - enables depth expansion with multiple devices
OPTL / OPTRI/O Voltage OptionVSS = 2.5 V I/O; VDD = 3.3 V I/O - configures VDDQL/VDDQR supply requirement independently per port
ZZL / ZZRSleep Mode InputVIH = enter low-power sleep (≤10 mA); dynamic inputs disabled except JTAG - preserves state during idle

Key Features

Feature Design Value
True Dual-Port ArchitectureSimultaneous independent read/write to identical addresses - eliminates arbitration latency in real-time systems
RapidWrite ModeBack-to-back writes without toggling R/W or CE - reduces controller timing burden and simplifies burst write firmware
On-Chip Semaphore LogicHardware-managed 8-bit semaphore flags (I/O0–I/O7) - avoids software locks and race conditions in multi-CPU designs
Per-Port I/O Voltage SelectionOPTL/OPTR pins set 2.5 V or 3.3 V I/O levels - enables direct interfacing to mixed-voltage FPGAs, ASICs, or microcontrollers
JTAG Boundary-Scan SupportIEEE 1149.1 compliant TAP (TCK/TMS/TDI/TDO/TRST) - enables in-system test and debug without physical probe access
Industrial Temperature Range–40°C to +85°C operation with no derating - validated for deployment in base stations, motor drives, and industrial PLCs

Applications

Telecom Packet Buffering FPGA Co-Processor Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets between line cards and switching fabric.

IC Role / Device Role / Timing Role: Dual-port SRAM acts as ping-pong buffer - one port accepts ingress packets while the other services egress scheduling logic.

Use Value: 12 ns tAA enables sub-100 ns packet header lookup and store-forward latency, meeting carrier-grade SLA requirements.

Use Scenario: Providing shared memory between FPGA fabric and external ARM-based host processor in embedded vision systems.

IC Role / Device Role / Timing Role: Left port interfaces FPGA Avalon-MM bus; right port connects to ARM AXI bus - synchronized via semaphore flags.

Use Value: Hardware semaphore logic eliminates software mutex overhead, enabling deterministic <5 µs inter-processor handshaking.

Real-Time Motor Control Multi-Core DSP Intercommunication

Use Scenario: Exchanging position feedback, PWM update commands, and fault status between dual-axis motion controllers.

IC Role / Device Role / Timing Role: Dual-port SRAM serves as deterministic shared memory - one port for servo loop updates, the other for HMI logging.

Use Value: BUSY flag assertion prevents write collisions during simultaneous access, ensuring jitter-free 10 kHz control loop execution.

Use Scenario: Enabling cache-coherent data exchange between two SHARC or C6000 DSPs executing parallel signal processing tasks.

IC Role / Device Role / Timing Role: Acts as zero-wait-state inter-DSP mailbox - INTL/INTR signals trigger DMA transfers upon data readiness.

Use Value: 2.5 V core + 3.3 V I/O allows direct connection to both DSP families without level shifters, reducing BOM count and layout complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1362BV33-12BGXI3.3 V core; 12 ns access; 256K × 36; 256-ball BGA only - no PQFP optionRequires PCB redesign for BGA; lacks RapidWrite mode and per-port OPT configurationSelect if BGA footprint is acceptable and 3.3 V core simplifies power tree; avoid if PQFP or mixed I/O voltages are required.
IDT70V27L12PF128K × 36; 12 ns; 3.3 V core; 208-pin PQFP - smaller density, higher core voltageHalf memory depth; no semaphore logic or JTAG; limited to single-voltage I/OChoose only for cost-sensitive, lower-bandwidth applications where semaphore and dual-voltage I/O are unnecessary.

Compared with CY7C1362BV33-12BGXI and IDT70V27L12PF, the 70T659S12DR uniquely delivers industrial temperature rating in PQFP, per-port I/O voltage flexibility, and hardware semaphore support - critical for deterministic real-time systems where layout change or feature compromise is unacceptable.

Availability

70T659S12DR is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, FPGA-based prototyping, and multi-processor embedded systems requiring stable component supply across extended product lifecycles.

Supply support for 70T659S12DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The 70T659S12DR belongs to IDT's high-performance asynchronous dual-port SRAM family, designed specifically for deterministic inter-processor communication in real-time embedded systems where latency, reliability, and mixed-voltage interoperability are critical.

FAQ

What is the function of the M/S pin on the 70T659S12DR?

The M/S pin on the 70T659S12DR selects master or slave mode for cascaded configurations. When M/S = VIH, the device operates as a Master and asserts BUSYR/BUSYL as outputs to signal port contention. When M/S = VIL, it acts as a Slave and accepts BUSY as an input. This enables depth expansion beyond 256K × 36 using multiple 70T659S12DR devices without external glue logic.

Does the 70T659S12DR support RapidWrite mode, and how does it affect timing?

Yes, the 70T659S12DR supports RapidWrite mode, allowing back-to-back write operations without pulsing R/W, CE, or BE signals high between cycles. In this mode, the end of each write is defined by the address transition rather than signal deassertion, reducing controller timing complexity. All standard AC parameters (tWC, tDW, tDH) still apply, but tAS and tWR are only relevant when switching from read to write.

Can the left and right ports of the 70T659S12DR operate at different I/O voltages?

Yes - the 70T659S12DR supports independent I/O voltage selection per port via OPTL and OPTR. Setting OPTL = VSS configures the left port for 2.5 V I/O (requiring VDDQL = 2.5 V), while OPTR = VDD configures the right port for 3.3 V I/O (requiring VDDQR = 3.3 V). This enables seamless interfacing with heterogeneous logic families without external level shifters.

What is the purpose of the semaphore feature in the 70T659S12DR?

The semaphore feature in the 70T659S12DR provides eight hardware-managed flags accessible via I/O0–I/O7 and addressed by A0–A2. These flags enable atomic read-modify-write operations for inter-processor synchronization, eliminating software race conditions. Semaphore access requires CE = VIH and SEM = VIL, and is fully supported by on-chip arbitration logic - a key differentiator for real-time multi-CPU systems using the 70T659S12DR.

Is the 70T659S12DR pin-compatible with other members of the IDT70T651/9 family?

No - the 70T659S12DR is not pin-compatible with IDT70T651 variants. While sharing the same DR-208 PQFP package and functional pinout, the 70T659S12DR has A17L and A17R designated as no-connects (per datasheet Note 1), whereas IDT70T651 uses A17 for addressing. This difference affects address decoding and requires board-level validation when substituting within the same family.

70T659S12DR Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
208-BFQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Dual Port, Asynchronous
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
2.4V ~ 2.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
208-PQFP (28x28)

70T659S12DR FAQ

1.How can I place an order for 70T659S12DR through Aetrix?

Please submit a Request for Quotation (RFQ) for 70T659S12DR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 70T659S12DR reliable?

The price and inventory of 70T659S12DR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 70T659S12DR is usually 5 days.

3.What payment methods are accepted for 70T659S12DR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 70T659S12DR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 70T659S12DR?

70T659S12DR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 70T659S12DR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 70T659S12DR?

For technical support, including 70T659S12DR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 70T659S12DR requirements.

6.How does Aetrix verify that 70T659S12DR is sourced from the original manufacturer or authorized distributors?

All 70T659S12DR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 70T659S12DR meets industry standards.

7.What is the process for return or replacement of 70T659S12DR?

All 70T659S12DR units undergo pre-shipment inspection (PSI). If there is an issue with 70T659S12DR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 70T659S12DR part is unused and in its original packaging.

Return procedure for 70T659S12DR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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