Renesas 70V06L55PF8

Overview

70V06L55PF8 from IDT (now Renesas) is a high-speed 3.3V 16K × 8 dual-port static RAM with true independent left/right ports, 55 ns read cycle time, industrial temperature range (–40°C to +85°C), and full on-chip semaphore and interrupt logic - used in real-time interprocessor communication systems requiring concurrent memory access without arbitration overhead.

For engineers reviewing the 70V06L55PF8 datasheet, 70V06L55PF8 pinout, 70V06L55PF8 application, or 70V06L55PF8 equivalent, key selection criteria include dual-port timing compatibility (tRC = 55 ns), 64-pin TQFP package footprint, 3.3V ±0.3V supply operation, and hardware semaphore support for lock-free synchronization between heterogeneous processors.

Technical Context

The 70V06L55PF8 implements fully asynchronous dual-port architecture with separate address, data, and control buses per port (A0L–A13L/I/O0L–I/O7L/CEL/OEL/R/WL on left; A0R–A13R/I/O0R–I/O7R/CER/OER/R/WR on right), enabling simultaneous non-contentious reads/writes to any memory location. It supports master/slave configuration via M/S pin for 16-bit+ bus expansion.

On-chip arbitration uses push-pull BUSY flags (BUSYL/BUSYR) with address- or CE-based contention detection, plus dedicated INTL/INTR interrupt outputs tied to fixed mailbox addresses (3FFEh/3FFFh). Semaphore logic operates across eight flags addressed by A0–A2 with write-to-I/O0/read-from-I/O0–I/O7 protocol under SEM = VIL.

Key Specifications

Pinout & Package

70V06L55PF8 is packaged in a 64-pin thin quad flatpack (TQFP, package code PNG64), measuring 14 mm × 14 mm × 1.4 mm, with gull-wing leads and exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C028V-55AXC and IS61WV102416BLL-10TLI, the 70V06L55PF8 uniquely integrates hardware semaphore and interrupt logic in an 8-bit, low-quiescent-current 64-pin TQFP package - reducing external component count and simplifying real-time interprocessor synchronization in industrial and automotive edge nodes.

Availability

70V06L55PF8 is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, automotive ADAS hubs, and DSP co-processor interfaces requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for 70V06L55PF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and memory solutions for industrial, automotive, and communications markets.

The 70V06L55PF8 belongs to IDT's legacy dual-port SRAM product line, engineered specifically for deterministic, low-latency interprocessor communication in real-time embedded systems where hardware-managed concurrency is essential.

FAQ

What is the maximum operating frequency supported by the 70V06L55PF8?

The 70V06L55PF8 does not operate at a clock frequency but is characterized by access timing parameters. Its 55 ns read cycle time (tRC) supports effective data transfer rates up to 18.2 million words per second. This timing is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±0.3 V supply, making the 70V06L55PF8 suitable for high-throughput deterministic interprocessor links without clock domain constraints.

Does the 70V06L55PF8 support battery backup operation?

Yes, the 70V06L55PF8 supports battery backup operation with 2 V data retention voltage. When VDD drops below 2.0 V while CE pins remain asserted, the device maintains stored data with standby current as low as 0.2 µA (ISB3). This capability enables seamless failover to backup power in industrial controllers and telecom systems where memory state preservation during main power interruption is critical - a feature confirmed in the DC Electrical Characteristics table of the official datasheet.

How does the M/S pin affect BUSY signal behavior on the 70V06L55PF8?

When M/S = VIH, the 70V06L55PF8 operates as a master: BUSYL and BUSYR are push-pull outputs that assert LOW during port contention. When M/S = VIL, it operates as a slave: BUSYL and BUSYR become inputs that, when driven LOW by a master device, internally inhibit writes to prevent data corruption. This dual-mode operation enables hierarchical multi-device memory systems - a function explicitly defined in the Pin Names table and Truth Table IV of the 70V06L55PF8 datasheet.

Can the 70V06L55PF8 be used in a single-port configuration?

Yes, the 70V06L55PF8 can operate in single-port mode by tying one port's CE pin high (e.g., CER = VIH) and using only the left port (CEL, R/WL, OEL, A0L–A13L, I/O0L–I/O7L). In this configuration, the device behaves as a standard 16K × 8 SRAM with 55 ns access time and retains all low-power features (ISB3 = 0.2 µA). The unused right-port pins may be left unconnected or tied to inactive logic levels - a usage mode validated in the Functional Description section of the datasheet.

What are the voltage thresholds for VIH and VIL on control inputs of the 70V06L55PF8?

Per the DC Electrical Characteristics table, VIH is guaranteed ≥2.0 V (minimum) and ≤VDD + 0.3 V (maximum), while VIL is guaranteed ≤0.8 V (maximum) and ≥–0.3 V (minimum) over the full industrial temperature range. These thresholds ensure reliable interfacing with standard 3.3 V CMOS and LVTTL logic families without level shifters - a specification directly extracted from Table 6 (2942 tbl 06) of the official 70V06L55PF8 datasheet.