Renesas 70V06S45PF8

Overview

70V06S45PF8 from IDT is a high-speed 3.3V 16K × 8 true dual-port static RAM with independent left/right ports, 45 ns read cycle time (tRC), TTL-compatible I/O, and on-chip semaphore/interrupt arbitration logic. It enables simultaneous asynchronous access to the same memory location and supports master/slave cascading for 16-bit+ data bus expansion in real-time inter-processor communication systems.

For engineers reviewing the 70V06S45PF8 datasheet, 70V06S45PF8 pinout, 70V06S45PF8 application, or 70V06S45PF8 equivalent, key selection criteria include guaranteed 45 ns access timing, dual-port contention resolution via BUSY/SEM/INT signals, 3.3V ±0.3V single-supply operation, and support for industrial temperature range (−40°C to +85°C) in 64-pin TQFP packaging.

Technical Context

The 70V06S45PF8 implements fully asynchronous dual-port architecture with separate address, control, and bidirectional I/O buses per port. Its on-chip arbitration logic resolves port-to-port contention using BUSY flag assertion (M/S = VIH) or BUSY input synchronization (M/S = VIL), with tBDD ≤ 35 ns ensuring valid data after BUSY deassertion.

It integrates dedicated semaphore registers (8 flags, addressed by A0–A2) and interrupt mailbox logic (INTL/INTR triggered at addresses 3FFEh/3FFFh), both accessible without disrupting main memory operations. Power management uses CE-controlled automatic standby, achieving ISB3 ≤ 2.5 mA full standby current with CMOS-level inputs.

Key Specifications

Pinout & Package

70V06S45PF8 is housed in a 64-pin thin quad flatpack (TQFP, package code PNG64), with 32 pins assigned to I/O (16 per port), 28 address lines (14 per port), 10 control signals (including dual CE/OE/R/W/SEM/INT/BUSY), and 4 power/ground pins (2 VDD, 2 VSS).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C028V-45AXC and AS7C33160B-45TIN, the 70V06S45PF8 uniquely delivers 8-bit dual-port operation with integrated semaphore, interrupt, and BUSY arbitration in a compact 64-pin TQFP-reducing BOM count and layout complexity for 8-bit microcontroller-based systems.

Availability

70V06S45PF8 is available at Aetrix Electronics and suitable for industrial PLC communication modules, avionics data concentrators, medical imaging frame buffers, telecom baseband processor interfaces, and real-time embedded control systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V06S45PF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions for communications, computing, and industrial markets.

The 70V06S45PF8 belongs to IDT's legacy dual-port SRAM product line, engineered specifically for deterministic inter-processor communication in real-time embedded systems where hardware arbitration and low-latency memory access are critical.

FAQ

What is the maximum operating frequency supported by the 70V06S45PF8?

The 70V06S45PF8 does not specify a clock frequency because it is an asynchronous SRAM. Its performance is defined by timing parameters: read cycle time (tRC) is 45 ns max, corresponding to a theoretical maximum sustained read rate of ~22.2 MHz per port. Actual system throughput depends on address/control setup/hold times and bus protocol overhead-not a fixed clock domain.

Does the 70V06S45PF8 support battery backup for data retention?

Yes, the 70V06S45PF8 supports battery backup operation with 2 V data retention. When VDD drops below 2.0 V while remaining ≥ 2.0 V, the device maintains stored data in standby mode. This feature enables non-volatile operation during main power loss in applications like industrial controllers and medical devices where memory persistence is essential.

How does the M/S pin affect BUSY signal behavior on the 70V06S45PF8?

When M/S = VIH, the 70V06S45PF8 operates as a master: BUSYL and BUSYR are push-pull outputs that assert LOW during port-to-port address contention. When M/S = VIL, it operates as a slave: BUSYL and BUSYR become inputs, and external BUSY signals from a master device control write inhibition-enabling hierarchical arbitration in multi-device systems.

Can the 70V06S45PF8 be used in a single-port configuration?

Yes, the 70V06S45PF8 can operate as a single-port SRAM by tying one port's CE pin high (e.g., CER = VIH) and using only the other port's address, data, and control lines. In this mode, it functions as a standard 16K × 8 SRAM with 45 ns access time, retaining all power management features (ISB3 ≤ 2.5 mA) and 3.3V compatibility-ideal for drop-in replacement in legacy designs.

What are the voltage thresholds for VIH and VIL on control inputs of the 70V06S45PF8?

Per the datasheet, VIH (input high voltage) is guaranteed ≥ 2.0 V and ≤ VDD + 0.3 V, while VIL (input low voltage) is guaranteed ≤ 0.8 V and ≥ −0.3 V (for pulse widths ≥ 10 ns). These thresholds ensure robust noise margins with 3.3V TTL-compatible logic families and allow direct interfacing with FPGAs, microcontrollers, and ASICs without level shifters.