Renesas 70V06S55PF

Overview

70V06S55PF from IDT (Integrated Device Technology) is a high-speed 3.3V 16K × 8 dual-port static RAM with true independent left/right ports, 55 ns read cycle time, TTL-compatible I/O, and on-chip semaphore/interrupt arbitration logic. It enables simultaneous asynchronous access to shared memory in real-time inter-processor communication systems such as industrial PLCs and telecom line cards.

For engineers reviewing the 70V06S55PF datasheet, 70V06S55PF pinout, 70V06S55PF application, or 70V06S55PF equivalent, key selection criteria include its 55 ns access timing, 3.3V ±0.3V single-supply operation, master/slave cascading capability via M/S pin, and integrated BUSY/INT/SEM logic for lock-free multi-processor synchronization.

Technical Context

The 70V06S55PF implements fully asynchronous dual-port architecture with separate address, control, and data buses per port-enabling concurrent read/write operations without external arbitration logic. Its internal hardware supports three coherency mechanisms: BUSY flag arbitration (address- or CE-based), eight-bit semaphore registers (A0–A2 addressed), and dedicated interrupt flags (INTL/INTR) tied to fixed mailbox addresses (3FFEh/3FFFh).

Each port features independent chip enable (CEL/CER), read/write (R/WL/R/WR), and output enable (OEL/OER) controls, with automatic power-down when CE is high. The device operates across commercial temperature range (0°C to +70°C) and uses CMOS process technology to achieve typical active power of 140 mA and full standby current as low as 0.2 mA under CMOS-level inputs.

Key Specifications

Pinout & Package

70V06S55PF is housed in a 68-pin Plastic Leaded Chip Carrier (PLCC, package code PLG68), with all VDD pins requiring connection to 3.3V supply and all VSS pins tied to ground. Pin 1 is located at the index corner, and the package body measures approximately 0.95 in × 0.95 in × 0.17 in.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C024AV-55AXC and IDT70V25L25PF, the 70V06S55PF offers optimal balance of speed (55 ns), compact 68-pin PLCC packaging, and built-in master/slave arbitration-making it ideal for cost-sensitive, space-constrained dual-processor designs where 8-bit data width suffices.

Availability

70V06S55PF is available at Aetrix Electronics and suitable for industrial PLC communication modules, telecom line card buffers, and medical imaging subsystems requiring stable component supply, long-term obsolescence management, and traceable sourcing.

Supply support for 70V06S55PF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V06S55PF belongs to IDT's legacy dual-port SRAM product line, engineered specifically for deterministic, low-latency inter-processor communication in real-time embedded systems with strict timing and reliability requirements.

FAQ

What is the maximum operating frequency supported by the 70V06S55PF?

The 70V06S55PF does not specify a clock frequency because it is an asynchronous SRAM. Its performance is defined by timing parameters: maximum read cycle time (tRC) is 55 ns, meaning it supports up to ~18.2 MHz effective throughput when continuously reading. Actual system bandwidth depends on address/data setup/hold times and bus protocol overhead-not a fixed clock rate. This asynchrony simplifies integration with diverse microcontrollers and FPGAs without clock domain concerns.

Does the 70V06S55PF support battery backup for data retention?

Yes, the 70V06S55PF supports battery backup operation with 2 V data retention-meaning it maintains stored data when VDD drops to as low as 2.0 V, provided all other supply and environmental conditions remain within specification. This feature enables seamless data preservation during main power loss in applications like industrial controllers or medical devices, without requiring external non-volatile storage or complex power-fail circuitry.

How does the M/S pin affect BUSY signal behavior on the 70V06S55PF?

When M/S = VIH, the 70V06S55PF operates as a master: BUSYL and BUSYR are push-pull outputs that assert low during address contention to block writes. When M/S = VIL, it operates as a slave: BUSYL and BUSYR become inputs, and external BUSY signals from a master device inhibit local writes. This configuration enables hierarchical arbitration in multi-device systems, allowing expansion beyond 16-bit data width while preserving full-speed error-free operation without added logic.

Can the 70V06S55PF be used in a single-port configuration?

Yes, the 70V06S55PF can operate in single-port mode by tying one port's CE (e.g., CER) high permanently, disabling that side. The remaining port (e.g., left) functions as a standard high-speed 3.3V SRAM with full 16K × 8 capacity, retaining all timing and electrical characteristics. This flexibility allows reuse of the same component across designs with varying inter-processor requirements-reducing BOM complexity and qualification effort.

What are the valid address ranges for interrupt mailbox functionality on the 70V06S55PF?

The 70V06S55PF uses fixed addresses for interrupt mailbox operation: writing to address 3FFEh (hex) sets the left-port interrupt flag (INTL), and writing to 3FFFh (hex) sets the right-port flag (INTR). Reading those same addresses clears the respective flags. These locations reside within the normal memory map and are user-accessible-no special addressing mode is required. If interrupts are unused, 3FFEh and 3FFFh function as regular memory locations.