Renesas 70V26L35J

Overview

70V26L35J from Integrated Device Technology is a high-speed 3.3V 16K × 16 true dual-port static RAM with independent left/right ports, 35 ns maximum access time, 660 µW standby power, and on-chip semaphore logic for inter-processor resource arbitration - used in real-time embedded multiprocessor systems requiring concurrent memory access without software overhead.

For engineers reviewing the 70V26L35J datasheet, 70V26L35J pinout, 70V26L35J application, or 70V26L35J equivalent, this page delivers verified electrical specs, master/slave BUSY arbitration timing, byte-selectable I/O control, and dual-port SRAM integration guidance for industrial control, telecom line cards, and FPGA co-processor interfaces.

Technical Context

The 70V26L35J implements fully asynchronous dual-port operation with separate address, control, and bidirectional data buses per port - enabling simultaneous read/write to any memory location without internal contention. Its hardware semaphore logic uses eight dedicated latches (addressed via A0–A2) accessed under SEM = VIL, independent of the main 16K × 16 RAM array.

Port arbitration is implemented via push-pull BUSY outputs (BUSYL/BUSYR) that assert when both ports access the same address; M/S pin configures the device as master (BUSY output) or slave (BUSY input), enabling cascaded width expansion with one master coordinating BUSY signaling across multiple devices.

Key Specifications

Pinout & Package

70V26L35J is packaged in an 84-pin Plastic Leaded Chip Carrier (PLCC), body size ≈ 1.15 in × 1.15 in × 0.17 in, with all VDD pins connected to 3.3V supply and all VSS pins tied to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C026V-35AXC and IDT70V36S35PF, the 70V26L35J uniquely combines industrial temperature range, integrated semaphores, and 3.3V-only operation in a proven 84-pin PLCC footprint - making it optimal for new designs requiring hardware-coordinated multiprocessor memory sharing without external logic.

Availability

70V26L35J is available at Aetrix Electronics and suitable for industrial PLC controllers, telecom line cards, avionics sensor fusion modules, and medical imaging real-time FIFOs requiring stable component supply across extended product lifecycles.

Supply support for 70V26L35J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for high-performance computing and communications systems.

The 70V26L35J belongs to IDT's high-speed dual-port SRAM product line, designed specifically for deterministic inter-processor communication in real-time embedded systems where software arbitration introduces unacceptable latency.

FAQ

What is the operating temperature range for the 70V26L35J?

The 70V26L35J is rated for industrial temperature operation from –40°C to +85°C. This specification is confirmed in the Absolute Maximum Ratings and Recommended DC Operating Conditions tables of the official IDT datasheet (DSC 2945/19). The device maintains full 35 ns access time and functional integrity across this range, making it suitable for harsh-environment applications such as factory automation and outdoor telecom equipment.

Does the 70V26L35J support true simultaneous read operations from both ports to the same memory location?

Yes, the 70V26L35J supports true simultaneous reads from both ports to the same memory location without contention or timing penalty. This capability is explicitly stated in the Features section of the datasheet: "True Dual-Ported memory cells which allow simultaneous reads of the same memory location." No BUSY assertion occurs during concurrent reads, and output data is valid on both ports within their respective tAA timing windows.

How does the M/S pin affect BUSY functionality in the 70V26L35J?

The M/S pin configures the 70V26L35J as either master (M/S = VIH) or slave (M/S = VIL). In master mode, BUSYL and BUSYR are push-pull outputs that assert when address collisions occur. In slave mode, they become inputs that internally inhibit writes when driven LOW - enabling cascaded configurations where one master coordinates arbitration across multiple slaves. This behavior is documented in Notes 1 and 2 of the Functional Block Diagram.

What is the standby power consumption of the 70V26L35J, and how is it achieved?

The 70V26L35J achieves 660 µW typical standby power (ISB3, both ports in full CMOS standby) by disabling internal circuitry when CEL and CER are held HIGH and all inputs are at valid CMOS levels. This ultra-low power state is specific to the "L" (low-power) variant and is measured under conditions where VIN > VDD – 0.2 V or VIN < 0.2 V, as specified in Table 9 of the datasheet. It enables long-duration battery backup in critical systems.

Can the 70V26L35J be used in a 32-bit data path configuration?

Yes, the 70V26L35J supports 32-bit expansion using its Master/Slave select architecture. Two devices can be cascaded - one configured as master (M/S = VIH), the other as slave (M/S = VIL) - with shared address and control lines. The master's BUSY output coordinates arbitration, while the combined I/O0L–I/O15L and I/O0R–I/O15R provide a seamless 32-bit data bus. This method is explicitly described in the device Description and Functional Description sections.