Renesas 70V3379S4BC8

Overview

70V3379S4BC8 from Integrated Device Technology is a high-speed 32K × 18-bit synchronous dual-port static RAM with pipelined output mode, 3.3V core supply, and selectable 3.3V/2.5V I/O interface per port. It supports simultaneous left/right port access to the same memory location, delivers 4.2ns clock-to-data (pipelined), and operates at 133MHz with 7.5ns cycle time for 9.6 Gbps bandwidth in telecom switching and real-time DSP buffering.

For engineers reviewing the 70V3379S4BC8 datasheet, 70V3379S4BC8 pinout, 70V3379S4BC8 application, or 70V3379S4BC8 equivalent, key selection criteria include dual-port latency matching, independent VDDQ voltage selection per port via OPTL/OPTR pins, counter-enable/reset functionality for burst address generation, and industrial-grade thermal stability up to +85°C.

Technical Context

This device implements true dual-port SRAM cells with fully synchronous operation on both ports-address, data, and control inputs are registered on the rising edge of CLKL/CLKR. The pipelined output mode introduces one-cycle latency between clock and valid data, enabling deterministic timing closure in high-frequency systems.

Each port features independent chip enables (CE0X/CE1X), byte enables (UBL/LBL, UBR/LBR), address strobe (ADSL/ADSR), and counter control (CNTENX/CNTRSTX). The self-timed write pulse decouples internal write timing from clock edge transitions, allowing fast cycle times without external timing constraints.

Key Specifications

Pinout & Package

70V3379S4BC8 is housed in a 256-pin fine-pitch Ball Grid Array (BC256/BCG256) with 17 mm × 17 mm footprint and 1.0 mm ball pitch. Power and ground balls are distributed across the array to minimize IR drop and EMI.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1375BV33-167AXC and AS7C33256B-15JIN, the 70V3379S4BC8 uniquely combines pipelined latency control, per-port I/O voltage flexibility, and integrated address counter - making it optimal for deterministic real-time buffering where voltage interoperability and burst efficiency matter.

Availability

70V3379S4BC8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and test equipment requiring stable component supply with verified commercial-grade temperature performance and long-term BOM continuity.

Supply support for 70V3379S4BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 70V3379 family was designed for deterministic, low-latency shared-memory architectures in packet processing, digital signal processing, and real-time control systems requiring true dual-port concurrency and voltage-flexible I/O.

FAQ

What is the maximum operating frequency of the 70V3379S4BC8?

The 70V3379S4BC8 supports a maximum clock frequency of 133 MHz, corresponding to a 7.5 ns minimum clock cycle time (tCYC2) in pipelined mode. This is validated across the commercial temperature range (0°C to +70°C) with 3.3 V core supply and proper termination. The 4.2 ns clock-to-data (tCD2) specification ensures reliable data capture at this rate.

Does the 70V3379S4BC8 support independent I/O voltage levels on left and right ports?

Yes, the 70V3379S4BC8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VIH configures VDDQL for 3.3 V operation; setting it to VIL configures VDDQL for 2.5 V. The same applies to OPTR and VDDQR. Both ports may operate at 3.3 V, 2.5 V, or one at each voltage simultaneously.

How does the address counter function in the 70V3379S4BC8?

The 70V3379S4BC8 integrates independent address counters per port. When CNTENL (or CNTENR) is driven low on the rising edge of CLKL (or CLKR), the internal counter advances by one. CNTRSTL (or CNTRSTR) asynchronously resets the counter to address 0. This enables burst sequential access without external address generation logic.

What power-saving modes does the 70V3379S4BC8 provide?

The 70V3379S4BC8 offers multiple power-saving states. Driving CE0X = VIH or CE1X = VIL places the respective port into low-power standby (ISB1–ISB4). Full standby (ISB3) draws just 6 mA (typ) when both ports are disabled with CMOS-level inputs. Self-timed write and registered inputs further reduce dynamic power during active operation.

Which package type is used for the 70V3379S4BC8?

The 70V3379S4BC8 uses a 256-pin fine-pitch Ball Grid Array (BC256/BCG256) package with a 17 mm × 17 mm body and 1.0 mm ball pitch. This package provides superior thermal dissipation and signal integrity for high-speed synchronous operation compared to TQFP alternatives, and is compatible with standard SMT reflow profiles.