Renesas 70V3379S5BC

Overview

70V3379S5BC from Integrated Device Technology is a high-speed 32K × 18-bit synchronous dual-port static RAM with pipelined output, true dual-port architecture enabling simultaneous access to the same memory location, 7.5 ns clock cycle time (133 MHz), and selectable 3.3 V or 2.5 V I/O interface per port. It supports industrial temperature range (–40°C to +85°C) and is used in real-time packet buffering for telecom line cards.

For engineers reviewing the 70V3379S5BC datasheet, 70V3379S5BC pinout, 70V3379S5BC application, or 70V3379S5BC equivalent, key selection criteria include pipelined read latency, independent port voltage configuration via OPT pins, counter-enabled burst addressing, dual chip enable for depth expansion, and low-power standby modes controlled by CE0/CE1.

Technical Context

The 70V3379S5BC implements fully synchronous operation on both ports with input registers for address, data, and control signals-enabling minimal setup (1.8 ns) and hold (0.7 ns) times at 133 MHz. Its self-timed write pulse operates independently of clock edge timing, decoupling write completion from clock phase.

Each port features independent OPT pins to configure VDDQ supply (3.3 V or 2.5 V), allowing mixed-voltage system interfacing. The integrated address counter-enabled via CNTEN and reset via CNTRST-supports burst-mode sequential access without external address generation logic.

Key Specifications

Pinout & Package

70V3379S5BC is packaged in a 256-pin BGA (BC256/BCG256) with 1.0 mm ball pitch and 17 mm × 17 mm body size. All VDD pins require 3.3 V; VDDQL/VDDQR must match OPTL/OPTR logic level (3.3 V if VIH, 2.5 V if VIL); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1375BV-5BC and AS7C3316B-5BC, the 70V3379S5BC uniquely delivers per-port I/O voltage selection and integrated address counter functionality within the same 32K × 18 footprint-enabling lower-system-component-count designs in mixed-voltage, burst-oriented applications.

Availability

70V3379S5BC is available at Aetrix Electronics and suitable for telecom infrastructure, industrial control, and test equipment applications requiring stable component supply, long-term lifecycle support, and industrial-grade thermal performance.

Supply support for 70V3379S5BC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 70V3379S5BC belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for deterministic, low-latency data exchange between asynchronous processing domains in telecom, military, and industrial systems.

FAQ

What is the maximum operating frequency of the 70V3379S5BC?

The 70V3379S5BC supports a 133 MHz maximum operating frequency, derived from its 7.5 ns clock cycle time (tCYC2). This timing is guaranteed over the full industrial temperature range (–40°C to +85°C) and applies to both ports simultaneously in pipelined mode. The device achieves this speed through registered inputs and self-timed write circuitry, eliminating dependency on clock duty cycle.

How does the OPTL and OPTR pin configuration affect the 70V3379S5BC I/O interface?

The OPTL and OPTR pins on the 70V3379S5BC independently configure the I/O voltage level for each port: setting OPTL = VIH (3.3 V) selects 3.3 V operation for the left port's VDDQL supply, while OPTL = VIL (0 V) selects 2.5 V. The same logic applies to OPTR and VDDQR. This allows the 70V3379S5BC to interface directly with 2.5 V FPGAs on one port and 3.3 V microcontrollers on the other-without external level shifters.

Can the 70V3379S5BC perform simultaneous read and write operations on the same memory address?

Yes, the 70V3379S5BC uses true dual-port memory cells that permit simultaneous read and write access to the same memory location-one port reading while the other writes. This capability is fundamental to its architecture and is explicitly validated in the functional description and truth tables. No arbitration logic or wait states are required, making it ideal for lock-free inter-processor communication buffers.

What is the purpose of the CNTENL and CNTENR signals in the 70V3379S5BC?

CNTENL and CNTENR enable the internal address counter for the left and right ports respectively. When asserted (CNTEN = VIL), the counter advances on each rising clock edge-generating sequential addresses without external address increment logic. This feature is essential for burst-mode applications like pattern memory or packet streaming, where consecutive memory locations are accessed rapidly. The counter can be reset independently via CNTRSTL/CNTRSTR.

Does the 70V3379S5BC support depth expansion, and how is it implemented?

Yes, the 70V3379S5BC supports depth expansion using its dual chip enable signals (CE0X and CE1X per port). Truth Table I shows that asserting CE0X = LOW and CE1X = HIGH enables a port, while other combinations disable it or place outputs in high-impedance. This allows stacking multiple 70V3379S5BC devices vertically-using identical address and data buses-with only CE0/CE1 lines decoded to select active devices-eliminating the need for external logic gates.