Renesas 70V3379S5BC8

Overview

70V3379S5BC8 from IDT (Integrated Device Technology) is a high-speed 32K × 18-bit synchronous dual-port static RAM with pipelined output, true dual-port architecture enabling simultaneous read/write access to the same memory location, 7.5 ns clock cycle time (133 MHz), and selectable 3.3 V or 2.5 V I/O interface per port. It supports industrial temperature range (–40°C to +85°C) and is used in real-time packet buffering for telecom line cards and FPGA co-processor data exchange.

For engineers reviewing the 70V3379S5BC8 datasheet, 70V3379S5BC8 pinout, 70V3379S5BC8 application, or 70V3379S5BC8 equivalent, key selection criteria include pipelined read latency, independent port voltage configuration via OPTL/OPTR pins, counter-enabled burst addressing, dual chip enable for depth expansion, and low-power standby modes controlled by CE0/CE1.

Technical Context

The 70V3379S5BC8 implements fully synchronous operation on both left and right ports, with all control, address, and data inputs registered on the rising edge of CLKL/CLKR. Its pipelined output mode introduces one-cycle latency between clock and valid data output (tCD2 ≤ 5 ns), while self-timed write logic decouples internal write pulse timing from clock edge transitions.

Each port features independent address strobe (ADSL/ADSR), counter enable (CNTENL/CNTENR), and counter reset (CNTRSTL/CNTRSTR) signals, enabling flexible burst-mode addressing without external counters. Byte enables (UBL/LBL and UBR/LBR) support 9-bit-wide I/O masking, and dual chip enables (CE0X/CE1X) allow seamless depth expansion without additional logic.

Key Specifications

Pinout & Package

70V3379S5BC8 is packaged in a 256-pin BGA (BC256/BCG256) with 1.0 mm ball pitch and 17 mm × 17 mm body size. All VDD pins require 3.3 V supply; VDDQ pins must match OPT pin logic level (3.3 V if OPT = VIH, 2.5 V if OPT = VIL); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1375BV25-5BC and AS7C33256P-10BIN, the 70V3379S5BC8 delivers lower latency (4.2 ns vs. 5/10 ns), per-port I/O voltage selection, and integrated address counter-enabling simpler, higher-performance designs in telecom and industrial control.

Availability

70V3379S5BC8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and FPGA-accelerated computing applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for 70V3379S5BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF power solutions for communications and computing markets.

The 70V3379 product line was designed specifically for real-time, low-latency dual-access memory applications in networking equipment, test instrumentation, and digital signal processing systems.

FAQ

What is the maximum operating frequency of the 70V3379S5BC8?

The 70V3379S5BC8 supports a minimum clock cycle time of 7.5 ns, corresponding to a maximum operating frequency of 133 MHz. This is guaranteed across the full industrial temperature range (–40°C to +85°C) and under worst-case voltage conditions (VDD = 3.15 V). The device achieves this with registered inputs and pipelined output architecture, ensuring deterministic timing behavior in high-speed synchronous systems.

Does the 70V3379S5BC8 support independent voltage levels on its two ports?

Yes, the 70V3379S5BC8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VIH configures the left port for 3.3 V I/O operation (requiring VDDQL = 3.3 V), while OPTL = VIL configures it for 2.5 V (requiring VDDQL = 2.5 V). The same applies independently to the right port via OPTR. The core VDD supply remains fixed at 3.3 V for both configurations.

How does the address counter function in the 70V3379S5BC8?

The 70V3379S5BC8 integrates a 15-bit address counter per port, controlled by CNTENX and CNTRSTX signals. When CNTENX = VIL on the rising edge of CLKX, the counter advances automatically-regardless of CE0X/CE1X state-enabling burst-mode sequential access without external logic. ADSX = VIH selects counter output as the effective address; ADSX = VIL loads external address A0X–A14X instead.

What power-saving modes does the 70V3379S5BC8 provide?

The 70V3379S5BC8 offers four distinct standby modes: ISB1 (both ports TTL-level disabled), ISB2 (one port active), ISB3 (full CMOS-level standby, 6 mA typical), and ISB4 (one port CMOS-standby). Power-down is triggered by asserting CE0X = VIH or CE1X = VIL for one clock cycle, and full reactivation requires two cycles with CE0X = VIL and CE1X = VIH. These modes reduce dynamic and static power in idle or partial-use scenarios.

Can the 70V3379S5BC8 be used for depth expansion without external logic?

Yes, the 70V3379S5BC8 supports depth expansion using only its dual chip enables (CE0X/CE1X) per port-no external decoding logic is required. For example, two devices can be stacked by tying CE0L of Device 1 to CE1L of Device 2 and vice versa, with shared address and data buses. This configuration allows seamless 64K × 18 memory expansion while maintaining full dual-port functionality on each device.