Renesas 70V3379S5BF8

Overview

70V3379S5BF8 from Integrated Device Technology is a high-speed 32K × 18-bit synchronous dual-port static RAM with pipelined output, true dual-port architecture enabling simultaneous read/write access to the same memory location, 7.5 ns cycle time (133 MHz), and selectable 3.3 V or 2.5 V I/O interface per port. It supports industrial temperature range (−40°C to +85°C) and is used in real-time packet buffering for telecom line cards.

For engineers reviewing the 70V3379S5BF8 datasheet, 70V3379S5BF8 pinout, 70V3379S5BF8 application, or 70V3379S5BF8 equivalent, key selection criteria include pipelined clock-to-data timing (≤5 ns max), independent port voltage configuration via OPT pins, counter-enable/reset functionality for burst address sequencing, and dual chip enables for depth expansion without external logic.

Technical Context

The 70V3379S5BF8 implements fully synchronous operation on both left and right ports, with all control, address, and data inputs registered on the rising edge of CLKL/CLKR. Its self-timed write pulse decouples internal write latency from clock edge timing, enabling minimal cycle time.

Each port features independent VDDQ supply and OPT pin control to select 3.3 V or 2.5 V I/O voltage levels, allowing mixed-voltage system interfacing. The integrated 15-bit address counter (enabled by CNTENL/CNTENR) supports automatic address increment during burst transfers without external address generation.

Key Specifications

Pinout & Package

70V3379S5BF8 is packaged in a 208-pin fine-pitch Ball Grid Array (fpBGA, package code BF208) with 1.0 mm ball pitch and 17 mm × 17 mm body size. All VDD pins require connection to 3.3 V; VDDQ pins must match OPT pin logic level (3.3 V if OPT = VIH, 2.5 V if OPT = VIL); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1375BV25-5BC and AS7C33256P-10TIN, the 70V3379S5BF8 uniquely delivers per-port I/O voltage flexibility, pipelined 7.5 ns cycle performance, and integrated address counter - making it optimal for high-throughput, mixed-voltage, burst-oriented embedded memory subsystems.

Availability

70V3379S5BF8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and medical imaging systems requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature qualification.

Supply support for 70V3379S5BF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF power solutions.

The IDT70V3379 product line was designed for deterministic, low-latency memory interfacing in real-time embedded systems-particularly those demanding concurrent dual-port access, mixed-voltage compatibility, and pipelined throughput.

FAQ

What is the maximum operating frequency supported by the 70V3379S5BF8?

The 70V3379S5BF8 supports a minimum clock cycle time of 7.5 ns, corresponding to a maximum operating frequency of 133 MHz under industrial temperature conditions. This timing is guaranteed for pipelined read/write operations with tCD2 ≤ 5 ns and tCYC2 ≤ 7.5 ns, enabling sustained 9.6 Gbps aggregate bandwidth across both ports.

How does the OPT pin configuration affect power supply requirements for the 70V3379S5BF8?

For the 70V3379S5BF8, OPTL and OPTR independently determine each port's I/O voltage level: setting OPTL = VIH (3.3 V) requires VDDQL = 3.3 V ± 150 mV, while OPTL = VIL (0 V) requires VDDQL = 2.5 V ± 125 mV. The core VDD remains fixed at 3.3 V ± 150 mV regardless of OPT state. Incorrect VDDQ–OPT pairing violates DC operating conditions and may cause functional failure.

Can the 70V3379S5BF8 perform simultaneous read and write operations on the same memory address?

Yes, the 70V3379S5BF8 implements true dual-port static RAM cells that allow simultaneous read from one port and write to the same address on the other port. This capability is fundamental to its architecture and is explicitly validated in the functional description and truth tables - enabling coherent inter-processor data exchange without arbitration or contention.

What is the purpose of the CNTEN and CNTRST signals in the 70V3379S5BF8?

CNTENL/CNTENR enable the internal 15-bit address counter on the left/right port, causing automatic address increment on each clock cycle when ADS = VIH. CNTRSTL/CNTRSTR asynchronously resets the counter to address 0. These signals eliminate external address generation logic in burst-mode applications such as packet buffering or digital waveform generation.

Does the 70V3379S5BF8 support depth expansion, and how is it implemented?

Yes, the 70V3379S5BF8 supports depth expansion using its dual chip enable pairs (CE0L/CE1L and CE0R/CE1R). Per port, asserting CE0X = LOW and CE1X = HIGH enables the port, while CE0X = HIGH and CE1X = LOW places it in low-power standby. Cascading multiple devices with decoded CE signals allows seamless memory depth scaling without external logic gates or address decoding complexity.