Renesas 70V3379S5BFI

Overview

70V3379S5BFI from Integrated Device Technology is a high-speed 32K × 18-bit synchronous dual-port static RAM with pipelined output, 3.3V core supply, and selectable 3.3V/2.5V I/O interface per port. It supports simultaneous left/right port access, 133 MHz operation (7.5 ns cycle time), and industrial temperature range (–40°C to +85°C). Used in real-time DSP inter-processor communication and packet buffering in telecom line cards.

For engineers reviewing the 70V3379S5BFI datasheet, 70V3379S5BFI pinout, 70V3379S5BFI application, or 70V3379S5BFI equivalent, key selection criteria include pipelined read latency (≤5 ns), dual-voltage I/O flexibility (OPTL/OPTR-controlled), counter-enabled burst addressing, and 256-pin BGA package compatibility with high-density PCB layouts.

Technical Context

The 70V3379S5BFI implements true dual-port SRAM cells with fully synchronous clocked registers on all address, data, and control inputs-enabling minimal setup (1.8 ns) and hold (0.7 ns) times at 133 MHz. Its self-timed write architecture decouples internal write pulse generation from clock edge timing, improving write reliability across voltage/temperature corners.

Each port features independent OPT pins (OPTL/OPTR) that configure VDDQL/VDDQR for 3.3V or 2.5V I/O signaling, allowing mixed-voltage system interfacing without level shifters. The integrated address counter (CNTENL/CNTRSTL and CNTENR/CNTRSTR) enables burst-mode sequential access without external address generation logic.

Key Specifications

Pinout & Package

70V3379S5BFI is housed in a 256-pin fine-pitch Ball Grid Array (BC256/BCG256) with 17 mm × 17 mm footprint and 1.0 mm ball pitch. Power and ground balls are distributed across the array to minimize noise and support high-frequency signal integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1375BV33-5BC and AS7C33256B-10BIN, the 70V3379S5BFI delivers superior timing performance (5 ns pipelined access), industrial temperature resilience, and design flexibility via per-port I/O voltage selection and integrated address counter-reducing BOM count and PCB area in high-reliability, high-throughput systems.

Availability

70V3379S5BFI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, medical imaging, and defense electronics requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V3379S5BFI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V3379 product line targets high-speed, low-latency inter-processor and packet-buffering applications demanding true dual-port concurrency, pipelined timing, and robust industrial-grade operation.

FAQ

What is the maximum operating frequency supported by the 70V3379S5BFI?

The 70V3379S5BFI supports a minimum clock cycle time of 7.5 ns, enabling reliable operation at 133 MHz across its full industrial temperature range (–40°C to +85°C). This frequency is guaranteed under specified VDD = 3.3V ±150 mV and appropriate VDDQ conditions, with all AC timing parameters-including tSA, tHA, and tCD2-meeting limits at this rate.

Does the 70V3379S5BFI support independent I/O voltage levels on left and right ports?

Yes, the 70V3379S5BFI supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VIH (3.3V) configures VDDQL for 3.3V I/O signaling on the left port, while setting OPTR to VIL (0V) configures VDDQR for 2.5V signaling on the right port-enabling direct interfacing with mixed-voltage SoCs without external level shifters.

How does the address counter function in the 70V3379S5BFI, and what control signals manage it?

The 70V3379S5BFI integrates a 15-bit address counter per port, controlled by CNTENL/CNTENR (enable) and CNTRSTL/CNTRSTR (reset) inputs. When CNTENL = LOW, the left port counter advances on each CLKL rising edge; CNTRSTL = LOW resets it to address 0. This eliminates external counter logic in burst-access applications such as DMA transfers or FFT data streaming.

What package type and pin count does the 70V3379S5BFI use, and are thermal or mechanical drawings available?

The 70V3379S5BFI uses a 256-pin fine-pitch Ball Grid Array (BC256/BCG256) with 17 mm × 17 mm body size and 1.0 mm ball pitch. Official mechanical drawings-including land pattern, solder paste stencil, and thermal pad recommendations-are published in IDT document 4833 drw 02c and available through Renesas' product support portal.

Can the 70V3379S5BFI be used in depth-expansion configurations, and what signals enable this?

Yes, the 70V3379S5BFI supports depth expansion using its dual chip enables (CE0L/CE1L and CE0R/CE1R) per port. As shown in IDT Application Note 4833 drw 14, connecting CE0 and CE1 in complementary fashion across multiple devices allows stacking without external decoding logic-simplifying memory bank design in systems requiring >576 Kbit capacity.