Renesas 70V3379S6BC8

Overview

70V3379S6BC8 from Integrated Device Technology is a high-speed 32K × 18-bit synchronous dual-port static RAM with pipelined output, true dual-port architecture enabling simultaneous read/write access to the same memory location, 7.5 ns clock cycle time (133 MHz), and selectable 3.3 V or 2.5 V I/O interface per port. It is used in real-time packet buffering for telecom line cards and FPGA co-processor data exchange.

For engineers reviewing the 70V3379S6BC8 datasheet, 70V3379S6BC8 pinout, 70V3379S6BC8 application, or 70V3379S6BC8 equivalent, key selection criteria include pipelined read latency, independent port voltage configuration via OPTL/OPTR, counter-enabled burst addressing, and industrial-grade standby current at 85°C.

Technical Context

The 70V3379S6BC8 implements fully synchronous operation on both left and right ports, with all control, address, and data inputs registered on the rising edge of CLKL/CLKR. Its self-timed write pulse decouples internal write timing from clock edge transitions, enabling minimal cycle time.

Each port supports independent I/O voltage selection (3.3 V or 2.5 V) via dedicated OPTL and OPTR pins, requiring corresponding VDDQL/VDDQR supply alignment. The integrated 15-bit address counter (CNTENL/CNTRSTL and CNTENR/CNTRSTR) enables automatic address increment without external logic during burst transfers.

Key Specifications

Pinout & Package

70V3379S6BC8 is packaged in a 256-pin Ball Grid Array (BC256/BCG256) with 1.0 mm ball pitch and 17 mm × 17 mm body size. Power and ground pins are distributed across all four sides for low-inductance decoupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1375BV33-167AXC and AS7C33256PFS-12BIN, the 70V3379S6BC8 uniquely delivers per-port I/O voltage configurability and pipelined synchronous timing-enabling direct integration into heterogeneous voltage domain systems without glue logic or timing uncertainty.

Availability

70V3379S6BC8 is available at Aetrix Electronics and suitable for telecom infrastructure, FPGA-based accelerators, and real-time industrial controllers requiring stable component supply, long-term lifecycle support, and guaranteed commercial-grade temperature performance.

Supply support for 70V3379S6BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications, computing, and industrial markets.

The 70V3379 product line was designed specifically for high-bandwidth, low-latency dual-access memory applications in networking equipment, digital signal processing subsystems, and FPGA co-processing architectures.

FAQ

What is the maximum operating frequency supported by the 70V3379S6BC8?

The 70V3379S6BC8 supports a maximum clock frequency of 83.3 MHz, derived from its 12 ns clock cycle time specification. This is validated across the commercial temperature range (0°C to +70°C) with full timing margin for setup, hold, and propagation delays. The device achieves this using fully registered inputs and pipelined output staging, ensuring deterministic behavior at rated speed.

How does the address counter function in the 70V3379S6BC8?

The 70V3379S6BC8 integrates independent 15-bit address counters on both left and right ports. When CNTENL (or CNTENR) is held LOW, the counter advances by +1 on each rising CLKL (or CLKR) edge, regardless of CE0/CE1 state. CNTRSTL (or CNTRSTR) resets the counter to address 0. This eliminates need for external address generators in burst-mode applications like packet header processing or FFT buffer management.

Can the left and right ports of the 70V3379S6BC8 operate at different I/O voltages?

Yes-the 70V3379S6BC8 supports independent I/O voltage selection per port. OPTL configures the left port's VDDQL supply (3.3 V or 2.5 V), and OPTR configures the right port's VDDQR supply. Each must be matched to the selected OPT logic level: VIH (3.3 V) requires 3.3 V on VDDQL/VDDQR, and VIL (0 V) requires 2.5 V. This enables direct interfacing with mixed-voltage SoCs or FPGAs without external level shifters.

What is the purpose of the dual chip enable (CE0 and CE1) signals in the 70V3379S6BC8?

The dual chip enables (CE0 and CE1) in the 70V3379S6BC8 provide flexible power-down and depth expansion control. A HIGH on CE0 or LOW on CE1 places the port in low-power standby. For depth expansion, CE0L/CE1L and CE0R/CE1R can be wired in series across multiple devices to enable bank-select decoding without external logic-reducing board area and signal routing complexity in multi-MB memory systems.

Does the 70V3379S6BC8 support simultaneous read and write operations to the same memory address?

Yes-the 70V3379S6BC8 uses true dual-port SRAM cells that permit simultaneous, independent read and write access to the identical memory location from left and right ports. This capability is essential for lock-free inter-process communication, real-time data exchange between asymmetric processors, and hardware-accelerated FIFO implementations where producer and consumer operate concurrently without arbitration overhead.