Renesas 70V3389S4BCG

Overview

70V3389S4BCG from Integrated Device Technology is a high-speed 64K × 18-bit synchronous dual-port static RAM with pipelined output, true dual-port architecture enabling simultaneous access to the same memory location, 4.2 ns clock-to-data access (max), and support for independent 3.3 V or 2.5 V I/O interfaces per port. It serves as a high-bandwidth on-chip buffer in telecom line cards requiring deterministic latency and concurrent read/write operations across two independent buses.

For engineers reviewing the 70V3389S4BCG datasheet, 70V3389S4BCG pinout, 70V3389S4BCG application, or 70V3389S4BCG equivalent, key selection criteria include pipelined read timing (tCD2 ≤ 4.2 ns), dual chip enable depth expansion capability, independent OPT-pin-controlled I/O voltage selection per port, and industrial-grade thermal operation up to +85°C.

Technical Context

The 70V3389S4BCG implements fully synchronous operation on both ports with all registers clocked on the rising edge of CLKL/CLKR. Its self-timed write pulse operates independently of clock transitions, enabling minimal cycle time (7.5 ns) at 133 MHz. Address strobe (ADSL/ADSR) and counter control (CNTENL/CNTRSTL, CNTENR/CNTRSTR) allow flexible external address loading or internal sequential addressing.

Each port features independent byte enables (UBL/LBL, UBR/LBR) for 9-bit granularity, separate VDDQ supplies selectable via OPTL/OPTR pins (3.3 V or 2.5 V), and asynchronous output enable (OEL/OER). The device supports full standby modes via CE0/CE1 combinations, achieving as low as 6 mA ISB3 current when both ports are in CMOS-level standby.

Key Specifications

Pinout & Package

70V3389S4BCG is packaged in a 256-pin Ball Grid Array (BCG256) with 1.0 mm ball pitch and 17 mm × 17 mm body size. All VDD pins require connection to 3.3 V; VDDQ pins must match OPT pin logic level (3.3 V if OPT = VIH, 2.5 V if OPT = VIL); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with 70V3389S5BCG, the 70V3389S4BCG offers faster 4.2 ns access and commercial-temperature optimization, while CY7C1375EV-5BC trades flexibility for simpler power architecture but requires board redesign due to incompatible pinout and control logic.

Availability

70V3389S4BCG is available at Aetrix Electronics and suitable for telecom infrastructure, network packet processing, DSP co-processing, and real-time video buffering applications requiring stable component supply and guaranteed long-term availability.

Supply support for 70V3389S4BCG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

The 70V3389 family delivers high-speed synchronous dual-port SRAMs optimized for deterministic latency, concurrent bus access, and flexible voltage interfacing in telecom and networking equipment.

FAQ

What is the maximum operating frequency supported by the 70V3389S4BCG?

The 70V3389S4BCG supports a minimum clock cycle time of 7.5 ns, enabling operation at 133 MHz. This is validated across the commercial temperature range (0°C to +70°C) with all timing parameters-including tCD2 ≤ 4.2 ns and tSA ≥ 1.8 ns-guaranteed under worst-case voltage and process corners. The 70V3389S4BCG achieves 9.6 Gbps bandwidth per port at this rate.

How does the OPT pin configuration affect the 70V3389S4BCG's I/O voltage operation?

The OPTL and OPTR pins on the 70V3389S4BCG independently configure each port's I/O voltage: setting OPTL to VIH (3.3 V) requires VDDQL = 3.3 V and enables 3.3 V LVTTL-compatible signaling on the left port, while setting OPTL to VIL (0 V) requires VDDQL = 2.5 V and enables 2.5 V operation. The same applies to OPTR/VDDQR. This allows mixed-voltage system integration without external level shifters.

Can the 70V3389S4BCG perform simultaneous read and write operations on the same memory address?

Yes, the 70V3389S4BCG uses true dual-port memory cells that permit simultaneous read and write access to the exact same memory location-one port reading while the other writes. This behavior is inherent to the cell architecture and requires no special configuration. However, the data returned by the read port reflects the pre-write value; the newly written data appears on subsequent reads.

What is the purpose of the dual chip enable (CE0/CE1) signals on the 70V3389S4BCG?

The dual chip enable signals (CE0L/CE1L and CE0R/CE1R) on the 70V3389S4BCG implement a two-input enable logic per port: the port activates only when CE0X = LOW and CE1X = HIGH. This allows depth expansion of multiple devices using simple address decoding-e.g., two 70V3389S4BCG devices can be stacked to form a 128K × 18 memory without external logic, by tying CE1 of one device to CE0 of the next.

Does the 70V3389S4BCG support internal address counter functionality, and how is it controlled?

Yes, the 70V3389S4BCG supports internal address counting via CNTENL/CNTENR and CNTRSTL/CNTRSTR. When CNTENX = LOW on a rising clock edge, the internal counter increments; when CNTRSTX = LOW, the counter resets to zero on the next clock. ADSX = HIGH disables external address loading, allowing the counter to drive sequential accesses-ideal for burst transfers without external address generation logic.