Renesas 70V3389S5BC8

Overview

70V3389S5BC8 from Integrated Device Technology is a high-speed 64K × 18-bit synchronous dual-port static RAM with pipelined output, 3.3V core supply, and independently configurable 3.3V/2.5V I/O interfaces per port. It supports simultaneous read/write access to the same memory location, delivers 133MHz operation (7.5ns cycle time), and features address counter enable/reset for burst-mode addressing in telecom and packet buffering applications.

For engineers reviewing the 70V3389S5BC8 datasheet, 70V3389S5BC8 pinout, 70V3389S5BC8 application, or 70V3389S5BC8 equivalent, this device is selected for deterministic low-latency dual-access memory in FPGA co-processor systems, network switch data path buffers, and real-time digital signal processing where independent left/right port timing, byte-selectable writes, and power-down control are critical.

Technical Context

The 70V3389S5BC8 implements true dual-port SRAM cells with fully synchronous register-controlled inputs on both ports - all address, data, and control signals (including R/W, CE0/CE1, ADS, CNTEN, CNTRST) are sampled on the rising edge of CLKL/CLKR. Its pipelined output mode introduces a fixed one-cycle latency from clock to valid data, enabling predictable timing closure at 133MHz.

Each port supports independent VDDQ selection (3.3V or 2.5V) via OPTL/OPTR pins, allowing mixed-voltage system interfacing without level shifters. The device includes dedicated address strobe (ADSL/ADSR) and counter control (CNTENL/CNTRSTL, CNTENR/CNTRSTR) logic to support automatic sequential addressing during burst transfers, reducing external address generation overhead.

Key Specifications

Pinout & Package

70V3389S5BC8 is housed in a 256-pin fine-pitch BGA (BC256/BCG256) package with 17 mm × 17 mm footprint and 1.0 mm ball pitch. Power and ground balls are distributed across the array to minimize noise and ensure stable core/I/O rail decoupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C364000B-133BIN, the 70V3389S5BC8 uniquely integrates per-port VDDQ selection and hardware address counters - reducing BOM count, PCB layer count, and firmware overhead in mixed-voltage, high-throughput embedded systems.

Availability

70V3389S5BC8 is available at Aetrix Electronics and suitable for telecom infrastructure, FPGA-based accelerators, and industrial motion control systems requiring stable component supply across extended product lifecycles.

Supply support for 70V3389S5BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V3389S5BC8 belongs to IDT's high-speed synchronous dual-port SRAM product line, engineered specifically for deterministic, low-latency memory sharing between heterogeneous processors, FPGAs, and ASICs in real-time data path applications.

FAQ

What is the maximum operating frequency of the 70V3389S5BC8?

The 70V3389S5BC8 supports a minimum clock cycle time of 7.5 ns, corresponding to a maximum operating frequency of 133 MHz under industrial temperature conditions (–40°C to +85°C). This is validated for both ports simultaneously active with pipelined output mode enabled, delivering 9.6 Gbps aggregate bandwidth. The 'S5' speed grade guarantees 5 ns max clock-to-data-out (tCD2) timing.

Does the 70V3389S5BC8 support mixed-voltage operation between its two ports?

Yes, the 70V3389S5BC8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VIH (3.3 V) configures the left port for 3.3 V signaling with VDDQL = 3.3 V, while setting OPTR to VIL (0 V) configures the right port for 2.5 V signaling with VDDQR = 2.5 V. This enables direct interfacing with heterogeneous 3.3 V and 2.5 V logic without external level shifters.

How does the address counter function work on the 70V3389S5BC8?

The 70V3389S5BC8 includes dedicated CNTENL/CNTRSTL and CNTENR/CNTRSTR pins to control an internal 16-bit address counter per port. When CNTEN = VIL on the rising clock edge, the counter automatically increments - eliminating the need for external address bus updates during sequential bursts. CNTRST = VIH resets the counter to zero on the next clock edge, enabling rapid burst restart.

What power-saving features does the 70V3389S5BC8 offer?

The 70V3389S5BC8 provides four standby current modes: ISB1 (both ports TTL-disabled, 105 mA typ), ISB2 (one port active, 190 mA typ), ISB3 (full CMOS standby, 6 mA typ), and ISB4 (one port CMOS-standby, 180 mA typ). Power-down is triggered by asserting CE0 = VIH or CE1 = VIL, and outputs enter high-impedance state within 1 ns after clock high-to-low transition.

Which package variants are available for the 70V3389S5BC8?

The 70V3389S5BC8 is offered exclusively in the 256-pin Ball Grid Array package (BC256/BCG256), with 17 mm × 17 mm body size and 1.0 mm ball pitch. This package provides optimal thermal dissipation and signal integrity for high-speed 133 MHz operation. Other variants like the 128-pin TQFP (PKG128) and 208-pin fpBGA (BF208) are available for the base 70V3389 family but not for the S5 speed grade in BC8 suffix configuration.