Renesas 70V3389S6BF

Overview

70V3389S6BF from Integrated Device Technology is a high-speed 64K × 18-bit synchronous dual-port static RAM with pipelined output, true dual-port architecture enabling simultaneous left/right port access to the same memory location, 133 MHz operation (7.5 ns cycle time), and selectable 3.3 V or 2.5 V I/O interface per port - used in real-time digital signal processing, FPGA co-processor buffering, and high-throughput packet switching systems.

For engineers reviewing the 70V3389S6BF datasheet, 70V3389S6BF pinout, 70V3389S6BF application, or 70V3389S6BF equivalent, key selection criteria include pipelined read latency (4.2 ns max), independent port voltage configuration via OPTL/OPTR, counter-enable address auto-increment capability, and industrial-grade timing stability across -40°C to +85°C for telecom infrastructure and test equipment designs.

Technical Context

The 70V3389S6BF implements fully synchronous dual-port operation with clocked address, data, and control registers on both ports, supporting pipelined output mode where data valid occurs one clock cycle after address setup. Its self-timed write pulse decouples internal write completion from clock edge timing, enabling consistent 7.5 ns cycle time at 133 MHz.

Each port features independent chip enables (CE0X/CE1X), byte enables (UBL/LBL and UBR/LBR), address strobe (ADSL/ADSR), counter enable (CNTENL/CNTENR), and counter reset (CNTRSTL/CNTRSTR) - allowing flexible burst addressing, depth expansion without external logic, and low-power standby modes with <15 mA full standby current.

Key Specifications

Pinout & Package

70V3389S6BF is housed in a 208-pin fine-pitch Ball Grid Array (fpBGA, package code BF208) with 17 mm × 17 mm footprint and 1.0 mm ball pitch. Power distribution includes 12 dedicated VDD (3.3 V core), 16 VDDQ (I/O supply), and 32 VSS pins for noise suppression and thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1375BV-167AXC and AS7C364098B-10BIN, the 70V3389S6BF uniquely combines 133 MHz pipelined operation, per-port I/O voltage selection, and integrated address counter - making it the only option supporting mixed-voltage, low-latency, burst-mode buffering in space-constrained fpBGA layouts.

Availability

70V3389S6BF is available at Aetrix Electronics and suitable for telecom infrastructure, FPGA-accelerated computing, and automated test equipment requiring stable component supply, long-term lifecycle assurance, and industrial temperature compliance.

Supply support for 70V3389S6BF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF power solutions for communications and computing markets.

The 70V3389S6BF belongs to IDT's high-speed synchronous dual-port SRAM product line, engineered for deterministic latency, multi-domain interfacing, and robust operation in mission-critical infrastructure equipment.

FAQ

What is the maximum guaranteed clock frequency for 70V3389S6BF in pipelined read mode?

The 70V3389S6BF guarantees operation up to 133 MHz (7.5 ns cycle time) in pipelined mode, with tCD2 ≤ 4.2 ns and tCYC2 ≤ 7.5 ns across the full industrial temperature range (-40°C to +85°C). This specification is production-tested and documented in Table 11 of the official datasheet.

How does the OPTL and OPTR pin configuration affect 70V3389S6BF I/O voltage levels?

Setting OPTL = VIH (3.3 V) configures the left port for 3.3 V I/O operation with VDDQL = 3.3 V and VIH ≥ 2.0 V; setting OPTL = VIL (0 V) configures it for 2.5 V operation with VDDQL = 2.5 V and VIH ≥ 1.7 V. OPTR operates identically for the right port - enabling asymmetric voltage interfaces without external level shifters.

Can 70V3389S6BF perform simultaneous read and write operations on the same memory address?

Yes - the 70V3389S6BF uses true dual-port memory cells that permit concurrent read from one port and write to the same address on the other port. This behavior is explicitly supported in Truth Table I and confirmed in the Functional Description section of the datasheet.

What is the purpose of the CNTENL and CNTENR pins on 70V3389S6BF?

CNTENL and CNTENR enable the internal address counter for their respective ports. When asserted low on the rising edge of CLK, they increment the internal address register - allowing burst-mode sequential access without external address generation, reducing controller overhead in pattern memory or streaming applications.

Does 70V3389S6BF support depth expansion without external logic, and how is it implemented?

Yes - 70V3389S6BF implements dual chip enables (CE0X/CE1X) per port, enabling depth expansion by cascading multiple devices using simple CE signal routing. As shown in Figure 4 of the datasheet, two 70V3389S6BF units can be stacked for 128K × 18 capacity with no additional decoding logic required.