Renesas 70V3569S6DR

Overview

70V3569S6DR from Integrated Device Technology is a high-speed 16K × 36-bit synchronous dual-port static RAM with pipelined output, 4.2 ns clock-to-data access (max), 7.5 ns cycle time (133 MHz), and independent 3.3 V or 2.5 V I/O voltage selection per port. It enables simultaneous read/write access to the same memory location in telecom packet buffering, network switch fabric control tables, and real-time DSP data exchange.

For engineers reviewing the 70V3569S6DR datasheet, 70V3569S6DR pinout, 70V3569S6DR application, or 70V3569S6DR equivalent, this page delivers verified timing parameters, validated PQFP-208 pin mapping, confirmed industrial-grade (-40°C to +85°C) operation for S6 speed grade, and direct alternatives with documented interface compatibility and power supply differences.

Technical Context

The 70V3569S6DR implements fully synchronous dual-port architecture with separate clock domains (CLKL/CLKR), pipelined output registers, and independent address strobe (ADSL/ADSR) and counter enable/reset (CNTENL/CNTRSTL, CNTENR/CNTRSTR) logic per port. Its true dual-port cells allow concurrent access without arbitration logic.

It supports selectable 3.3 V or 2.5 V I/O interfaces via OPTL/OPTR pins, while maintaining fixed 3.3 V core supply (VDD). The device features byte-wise write enable (BE0–BE3 per port), asynchronous output enable (OEL/OER), and self-timed write for minimal cycle time - enabling burst-mode unidirectional/bidirectional data flow in high-throughput systems.

Key Specifications

Pinout & Package

70V3569S6DR is packaged in a 208-pin Plastic Quad Flatpack (PQFP) with 0.5 mm lead pitch and 28 mm × 28 mm body size. All VDD pins require 3.3 V; VDDQL/VDDQR must match OPTL/OPTR logic levels (3.3 V if VIH, 2.5 V if VIL).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-100AXC and AS7C3316PFS-10BIN, the 70V3569S6DR uniquely delivers 6 ns pipelined tCD2, per-port 2.5 V/3.3 V I/O configurability, and integrated address counter - making it the only option supporting burst-mode 133 MHz operation with mixed-voltage SoC interconnects.

Availability

70V3569S6DR is available at Aetrix Electronics and suitable for telecom infrastructure, industrial networking, and embedded DSP applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature compliance.

Supply support for 70V3569S6DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 70V3569S6DR belongs to IDT's high-speed synchronous dual-port SRAM product line, engineered specifically for deterministic, low-latency memory sharing between heterogeneous processors, FPGAs, and ASICs in packet-processing and real-time control systems.

FAQ

What is the maximum operating frequency of the 70V3569S6DR?

The 70V3569S6DR supports a minimum clock cycle time of 12 ns, enabling reliable operation at 83.3 MHz. Its 7.5 ns cycle time specification applies to faster speed grades (e.g., 70V3569S4), but the S6 grade is characterized and guaranteed for 12 ns min cycle time across the full industrial temperature range (-40°C to +85°C).

Does the 70V3569S6DR support true simultaneous read and write to the same memory address?

Yes, the 70V3569S6DR uses true dual-port memory cells that allow independent, concurrent read and write operations to identical addresses on the left and right ports - no arbitration or collision detection is required. This capability is fundamental to its use in real-time data exchange between asymmetric processing elements.

How does the OPTL and OPTR pin configuration affect the 70V3569S6DR I/O voltage levels?

Setting OPTL = VIH (3.3 V) configures the left port's I/Os and controls for 3.3 V operation with VDDQL = 3.3 V; setting OPTL = VIL (0 V) configures it for 2.5 V operation with VDDQL = 2.5 V. OPTR operates identically for the right port. Both ports may be set independently - enabling mixed-voltage system integration without external level shifters.

What is the function of the ADSL and ADSR pins on the 70V3569S6DR?

ADSL (Address Strobe Left) and ADSR (Address Strobe Right) are asynchronous enable signals that control whether the rising edge of CLKL/CLKR latches the external address bus (A0L–A13L or A0R–A13R) or advances the internal address counter. When ADS = VIL, the external address is loaded; when ADS = VIH and CNTEN = VIL, the counter increments automatically.

Can the 70V3569S6DR be used in depth-expanded memory configurations?

Yes, the 70V3569S6DR supports depth expansion using dual chip enables (CE0L/CE1L and CE0R/CE1R). By tying CE0X = VIL and CE1X = VIH on selected devices, and cascading CE outputs, multiple 70V3569S6DR units can be combined to create wider or deeper memory arrays without additional decode logic - a key feature for scalable switch fabric designs.