Renesas 70V3579S4BF8

Overview

70V3579S4BF8 from Integrated Device Technology is a high-speed 32K × 36-bit synchronous dual-port static RAM with pipelined output, 4.2 ns clock-to-data access (max), 7.5 ns cycle time (133 MHz), and independent 3.3 V or 2.5 V I/O voltage selection per port. It enables simultaneous read/write access to the same memory location in telecom packet buffers, network switch fabric controllers, and real-time DSP co-processing systems.

For engineers reviewing the 70V3579S4BF8 datasheet, 70V3579S4BF8 pinout, 70V3579S4BF8 application, or 70V3579S4BF8 equivalent, this page delivers verified timing parameters, validated 208-pin PQFP package mapping, confirmed dual-port counter/ADS control behavior, and precise power supply domain partitioning between VDD (3.3 V core) and VDDQ (3.3 V/2.5 V selectable I/O).

Technical Context

The 70V3579S4BF8 implements full synchronous operation on both ports using edge-triggered registers for address, data, byte enables, and control signals-enabling 133 MHz operation with 1.8 ns setup and 0.7 ns hold times at maximum frequency. Its pipelined output mode introduces one-cycle latency but guarantees deterministic tCD2 timing across temperature and voltage.

Each port features independent OPT pins (OPTL/OPTR) that configure its VDDQ supply level (3.3 V or 2.5 V), allowing mixed-voltage system interfacing without level shifters. The address counter (CNTEN/CNTRST) operates independently per port and advances on CLK rising edge when CNTEN = VIL, regardless of CE or BE states.

Key Specifications

Pinout & Package

70V3579S4BF8 is packaged in a 208-pin Plastic Quad Flatpack (PQFP) with 0.5 mm lead pitch and 28 mm × 28 mm body size. All VDD pins require 3.3 V ±150 mV; VDDQL/VDDQR supplies must match OPTL/OPTR logic levels (3.3 V if VIH, 2.5 V if VIL).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33256P-133JCIN, the 70V3579S4BF8 uniquely delivers pipelined determinism, per-port I/O voltage selection, and hardware address counting-enabling lower system latency, reduced BOM complexity, and simplified firmware in high-throughput embedded memory subsystems.

Availability

70V3579S4BF8 is available at Aetrix Electronics and suitable for telecom infrastructure, network switching, DSP acceleration, and broadcast video equipment requiring stable component supply and long-term industrial-grade availability.

Supply support for 70V3579S4BF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications and computing markets.

The 70V3579S4BF8 belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for low-latency, deterministic memory sharing in packet processing, switch fabric, and real-time signal processing applications.

FAQ

What is the maximum operating frequency of the 70V3579S4BF8?

The 70V3579S4BF8 supports up to 133 MHz operation, corresponding to a minimum clock cycle time (tCYC2) of 7.5 ns. This rating applies under commercial temperature conditions (0°C to +70°C) with VDD = 3.3 V ±150 mV and proper termination. The device achieves this speed using fully registered inputs and pipelined output architecture, ensuring timing predictability across voltage and temperature.

Does the 70V3579S4BF8 support mixed I/O voltages on left and right ports?

Yes, the 70V3579S4BF8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VIH configures VDDQL for 3.3 V operation; setting OPTL = VIL configures it for 2.5 V. The same applies to OPTR and VDDQR. This allows the left port to interface with a 3.3 V ASIC while the right port connects to a 2.5 V microcontroller-without external level shifters.

How does the address counter function in the 70V3579S4BF8?

The 70V3579S4BF8 implements a per-port address counter controlled by CNTENL/CNTENR and CNTRSTL/CNTRSTR. When CNTEN = VIL on the rising edge of CLK, the counter increments automatically-regardless of CE or BE states. ADS = VIH disables external address loading and enables counter-driven addressing. CNTRST = VIL asynchronously resets the counter to zero on the next CLK↑, with no dead cycle.

What is the purpose of the dual chip enable (CE0/CE1) per port in the 70V3579S4BF8?

The dual chip enable (CE0X and CE1X) per port in the 70V3579S4BF8 enables depth expansion without external logic. Activating a port requires CE0X = VIL and CE1X = VIH. Deactivating it (entering low-power mode) occurs when CE0X = VIH or CE1X = VIL. This configuration allows stacking multiple 70V3579S4BF8 devices to build wider or deeper memory arrays while maintaining independent power control per device.

Is the 70V3579S4BF8 pin-compatible with other members of the 70V3579 family?

The 70V3579S4BF8 shares identical pinout and functionality with other speed grades in the 70V3579Sx family (e.g., 70V3579S5, 70V3579S6) in the 208-pin PQFP package. Differences are limited to AC timing specifications (tCD2, tCYC2) and temperature grade-making them drop-in replacements in designs where timing margins permit. Always verify tCD2 and tCYC2 compliance for target clock frequency.