Renesas 70V3579S4DR

Overview

70V3579S4DR from Integrated Device Technology is a high-speed 32K × 36-bit synchronous dual-port static RAM with pipelined output, 4.2 ns clock-to-data access (max), 7.5 ns cycle time (133 MHz), and independent 3.3 V or 2.5 V I/O voltage selection per port. It enables simultaneous read/write access to the same memory location in real-time networking and packet buffering applications.

For engineers reviewing the 70V3579S4DR datasheet, 70V3579S4DR pinout, 70V3579S4DR application, or 70V3579S4DR equivalent, this page delivers verified timing parameters, dual-port interface behavior, industrial-grade thermal operation (–40°C to +85°C), and PQFP-208 package implementation details required for deterministic latency design in telecom switching and FPGA co-processing systems.

Technical Context

The 70V3579S4DR implements full synchronous operation on both ports using edge-triggered registers for address, data, and control inputs-enabling minimal setup (1.8 ns) and hold (0.7 ns) times at 133 MHz. Its pipelined output mode introduces one-cycle latency but guarantees deterministic tCD2 ≤ 4.2 ns under commercial conditions.

Each port supports independent VDDQ selection (3.3 V or 2.5 V) via OPTL/OPTR pins, allowing mixed-voltage system interfacing without level shifters. The integrated address counter-enabled by CNTEN and reset by CNTRST-provides burst-addressing capability without external logic, while dual chip enables (CE0/CE1 per port) support seamless depth expansion.

Key Specifications

Pinout & Package

70V3579S4DR is packaged in a 208-pin Plastic Quad Flatpack (PQFP) with 0.5 mm lead pitch and 28 mm × 28 mm body size. All VDD pins require 3.3 V supply; VDDQL/VDDQR must match OPTL/OPTR logic levels (3.3 V if VIH, 2.5 V if VIL).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33256P-133JCIN, the 70V3579S4DR delivers superior timing determinism (4.2 ns tCD2), flexible dual-voltage I/O per port, and integrated address counter-making it optimal for latency-critical, mixed-voltage, burst-oriented applications.

Availability

70V3579S4DR is available at Aetrix Electronics and suitable for telecom packet buffering, FPGA co-processing interfaces, and industrial PLC data exchange requiring stable component supply across extended product lifecycles.

Supply support for 70V3579S4DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 70V3579S4DR belongs to IDT's high-speed synchronous dual-port SRAM product line, engineered for deterministic latency, multi-voltage interoperability, and seamless integration into packet-forwarding and real-time control systems.

FAQ

What is the maximum operating frequency of the 70V3579S4DR?

The 70V3579S4DR supports a maximum clock frequency of 133 MHz, corresponding to a 7.5 ns clock cycle time. This is guaranteed across the commercial temperature range (0°C to +70°C) and validated with 1.8 ns setup and 0.7 ns hold timing margins on all inputs at that rate. The device maintains full functionality up to its specified AC limits without derating.

Does the 70V3579S4DR support independent I/O voltage selection on each port?

Yes, the 70V3579S4DR supports independent I/O voltage selection via OPTL and OPTR pins. Setting OPTL to VIH (3.3 V) configures VDDQL for 3.3 V operation; setting it to VIL (0 V) configures VDDQL for 2.5 V. The same applies to OPTR and VDDQR. This allows mixed-voltage interfacing-for example, left port at 3.3 V to an MCU and right port at 2.5 V to an FPGA bank-without external level shifters.

What is the function of the ADS signal in the 70V3579S4DR?

The ADS (Address Strobe) signal in the 70V3579S4DR is an asynchronous input that controls whether the external address or internal counter value is loaded on the rising edge of CLK. When ADS = VIL, the current address bus value is latched; when ADS = VIH, the internal address counter advances (if CNTEN = VIL) or holds (if CNTEN = VIH). This enables flexible addressing modes-including burst transfers without software-managed address incrementing.

How does the pipelined output mode affect timing in the 70V3579S4DR?

In pipelined output mode, the 70V3579S4DR outputs data one clock cycle after the read command is registered-guaranteeing deterministic tCD2 ≤ 4.2 ns (commercial grade). This eliminates variable propagation delays seen in non-pipelined SRAMs and simplifies timing analysis in high-speed synchronous systems. The output remains valid for one full cycle, enabling reliable capture by downstream logic without additional strobes.

What power-saving features does the 70V3579S4DR offer?

The 70V3579S4DR provides four distinct standby modes: ISB1 (both ports TTL-level disabled, 145 mA max), ISB2 (one port active, 265 mA max), ISB3 (full CMOS standby, 6 mA typ), and ISB4 (one port CMOS standby, 265 mA max). These are controlled by CE0/CE1 logic combinations and input voltage thresholds, enabling granular power gating per port during idle periods-critical for thermally constrained telecom and industrial applications.