Renesas 70V3579S5BC

Overview

70V3579S5BC from Integrated Device Technology is a high-speed 32K × 36-bit synchronous dual-port static RAM with pipelined output, 7.5 ns cycle time (133 MHz), true dual-port architecture enabling simultaneous read/write access to the same memory location, and independent 3.3 V or 2.5 V I/O voltage selection per port-used in high-bandwidth packet buffering and real-time DSP co-processor interfaces.

For engineers reviewing the 70V3579S5BC datasheet, 70V3579S5BC pinout, 70V3579S5BC application, or 70V3579S5BC equivalent, key selection criteria include pipelined latency tolerance, byte-selectable write control, counter-enabled burst addressing, industrial temperature support (−40°C to +85°C), and dual-chip-enable depth expansion capability without external logic.

Technical Context

The 70V3579S5BC implements fully synchronous operation on both ports using edge-triggered registers for address, data, and all control signals-including R/W, CE0/CE1, BE0–BE3, ADS, CNTEN, and CNTRST-ensuring deterministic timing at 133 MHz. Its pipelined output mode introduces one-cycle latency between clock edge and valid data output, while self-timed write enables minimal cycle time.

Each port features independent OPT pins (OPTL/OPTR) and dedicated VDDQ supplies (VDDQL/VDDQR), allowing configurable 3.3 V or 2.5 V I/O interface levels without affecting the 3.3 V core supply (VDD). The internal address counter supports automatic incrementing on rising CLK when CNTEN = L, and synchronous reset via CNTRST, enabling efficient sequential memory access patterns.

Key Specifications

Pinout & Package

70V3579S5BC is packaged in a 208-pin Plastic Quad Flatpack (PQFP) with 0.5 mm lead pitch and 28 mm × 28 mm body size. All VDD pins require 3.3 V supply; VDDQL/VDDQR must match OPTL/OPTR logic level (3.3 V if VIH, 2.5 V if VIL); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33256B-133BIN, the 70V3579S5BC uniquely delivers industrial temperature support, per-port 2.5 V/3.3 V I/O configurability, and integrated address counter-enabling simpler, more robust designs in telecom and industrial embedded systems.

Availability

70V3579S5BC is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V3579S5BC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management solutions for communications and computing markets.

The 70V3579S5BC belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for deterministic, low-latency inter-processor and packet-buffering applications demanding simultaneous access and industrial-grade reliability.

FAQ

What is the maximum operating frequency of the 70V3579S5BC?

The 70V3579S5BC supports a guaranteed 133 MHz operation (7.5 ns cycle time) across the industrial temperature range (−40°C to +85°C). This is validated by AC electrical characteristics in Table 11 of the datasheet, where tCYC2 ≤ 7.5 ns is specified for the S5 speed grade. The device achieves this using fully registered synchronous inputs and pipelined output architecture.

Does the 70V3579S5BC support independent I/O voltage levels on each port?

Yes, the 70V3579S5BC supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL = VIH configures the left port for 3.3 V I/O operation (requiring VDDQL = 3.3 V), while OPTL = VIL configures it for 2.5 V (requiring VDDQL = 2.5 V). The same applies independently to the right port using OPTR and VDDQR. The core VDD remains fixed at 3.3 V.

How does the address counter function in the 70V3579S5BC?

The 70V3579S5BC includes a synchronous 15-bit address counter per port. When CNTENL = L (low), the counter advances on each rising CLKL edge, generating the next sequential address. ADSL = H disables external address latching, allowing the counter output to drive the memory array. CNTRSTL = L resets the counter to address 0 on the next CLKL edge-enabling repeatable burst access patterns without software intervention.

What package options are available for the 70V3579S5BC?

The 70V3579S5BC is offered in three package variants: 208-pin Plastic Quad Flatpack (PQFP), 208-pin fine-pitch Ball Grid Array (fpBGA), and 256-pin Ball Grid Array (BGA). The "BC" suffix in 70V3579S5BC specifically denotes the 208-pin PQFP package with 0.5 mm lead pitch and 28 mm × 28 mm body size, as confirmed in the Pin Configuration diagrams on pages 4–5 of the datasheet.

Can the 70V3579S5BC be used for depth expansion without additional logic?

Yes, the 70V3579S5BC supports depth expansion using its dual chip enable architecture (CE0X and CE1X per port). By connecting CE0X of one device to CE1X of another and driving them with complementary signals, multiple 70V3579S5BC devices can be stacked to increase memory depth (e.g., 64K × 36) without external address decoding logic-reducing BOM count and layout complexity.