Renesas 70V3579S5BCI8

Overview

70V3579S5BCI8 from Integrated Device Technology is a high-speed 32K × 36-bit synchronous dual-port static RAM with pipelined output, true dual-port memory cells enabling simultaneous access to the same address, 5 ns max clock-to-data access (industrial grade), and 133 MHz operation at 7.5 ns cycle time. It serves as a shared buffer in real-time DSP systems requiring deterministic latency between two independent data paths.

For engineers reviewing the 70V3579S5BCI8 datasheet, 70V3579S5BCI8 pinout, 70V3579S5BCI8 application, or 70V3579S5BCI8 equivalent, key selection criteria include industrial temperature support (−40°C to +85°C), selectable 3.3 V/2.5 V I/O interface per port via OPT pins, pipelined read timing, and dual chip enable for depth expansion without external logic.

Technical Context

The 70V3579S5BCI8 implements full synchronous operation on both ports using edge-triggered registers for address, data, and all control inputs-including R/W, CE0/CE1, BE0–BE3, ADS, CNTEN, and CNTRST-ensuring minimal setup (1.8 ns) and hold (0.7 ns) times at 133 MHz. Its pipelined output mode introduces one-cycle latency for data valid after clock, while self-timed write enables fast cycle completion independent of bus turnaround.

Each port features independent power domains: fixed 3.3 V ±150 mV core supply (VDD) and selectable 3.3 V or 2.5 V ±125 mV I/O supply (VDDQ) controlled by dedicated OPTL/OPTR pins. The internal address counter supports automatic increment on CNTEN assertion, decoupled from memory access control signals, and resets synchronously on CNTRST.

Key Specifications

Pinout & Package

70V3579S5BCI8 is housed in a 208-pin Plastic Quad Flatpack (PQFP) with 0.5 mm pitch, body size 17 mm × 17 mm × 1.4 mm. All VDD pins require 3.3 V ±150 mV; VDDQL/VDDQR must match OPTL/OPTR logic levels (3.3 V if VIH, 2.5 V if VIL); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-5AC and AS7C33256B-10BIN, the 70V3579S5BCI8 uniquely delivers industrial temperature support, pipelined output timing, and integrated address counter-all in a single 208-pin PQFP-making it optimal for deterministic real-time systems where latency, reliability, and feature integration are critical.

Availability

70V3579S5BCI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, medical imaging, and defense electronics requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V3579S5BCI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The 70V3579S5BCI8 belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for deterministic, low-latency inter-processor communication in real-time embedded systems demanding industrial-grade reliability.

FAQ

What is the maximum operating frequency and corresponding cycle time for the 70V3579S5BCI8?

The 70V3579S5BCI8 supports up to 133 MHz operation with a minimum clock cycle time of 7.5 ns in pipelined mode. This specification applies across the full industrial temperature range (−40°C to +85°C) and is validated for both 3.3 V and 2.5 V I/O configurations. The device achieves this performance through fully registered synchronous inputs and self-timed write circuitry, eliminating dependency on external bus turnaround timing.

Does the 70V3579S5BCI8 support independent voltage supplies for each port's I/O interface?

Yes, the 70V3579S5BCI8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VIH (3.3 V) configures VDDQL for 3.3 V operation, while OPTL = VIL (0 V) selects 2.5 V; OPTR operates identically for the right port. This allows mixed-voltage system integration-for example, connecting the left port to a 2.5 V FPGA and the right port to a 3.3 V microcontroller-without external level shifters.

How does the address counter function in the 70V3579S5BCI8, and what signals control it?

The 70V3579S5BCI8 includes an internal address counter controlled by CNTENL/CNTENR and CNTRSTL/CNTRSTR. When CNTEN = VIL on the rising clock edge, the counter increments automatically, regardless of CE or R/W state. CNTRST synchronously resets the counter to zero on the next clock edge. Both functions operate independently of memory access control signals, enabling autonomous address generation for streaming applications without host CPU intervention.

What are the power consumption characteristics of the 70V3579S5BCI8 in standby modes?

The 70V3579S5BCI8 offers four distinct standby modes. In full CMOS standby (ISB3), with both ports disabled using CMOS-level inputs, typical current draw is 6 mA. In TTL-level standby with both ports inactive (ISB1), typical current is 105 mA for the industrial-grade 70V3579S5BCI8. These values are specified at VDD = 3.3 V and TA = +25°C, with worst-case maxima provided in the datasheet for design margining.

Can the 70V3579S5BCI8 be used for depth expansion, and how is it implemented?

Yes, the 70V3579S5BCI8 supports depth expansion using its dual chip enable (CE0/CE1) architecture. By connecting CE0 and CE1 to complementary decoded address bits, multiple devices can be stacked to increase memory depth-for example, two 70V3579S5BCI8 units yield 64K × 36. This eliminates the need for external logic gates or additional address lines, simplifying PCB layout and reducing system-level propagation delay compared to single-CE alternatives.