Renesas 70V3579S5DR

Overview

70V3579S5DR from Integrated Device Technology is a high-speed 32K × 36-bit synchronous dual-port static RAM with pipelined output, 7.5 ns cycle time (133 MHz), true dual-port concurrent access, and independent 3.3 V or 2.5 V I/O voltage selection per port. It supports industrial temperature range (−40°C to +85°C) and is used in real-time packet buffering, FPGA co-processor memory, and telecom line-card data exchange.

For engineers reviewing the 70V3579S5DR datasheet, 70V3579S5DR pinout, 70V3579S5DR application, or 70V3579S5DR equivalent, key selection criteria include pipelined read latency, byte-selectable 36-bit I/O width, dual-chip-enable depth expansion capability, and simultaneous left/right port timing compliance at 133 MHz.

Technical Context

The 70V3579S5DR implements fully synchronous operation on both ports using edge-triggered registers for address, data, and all control signals-including R/W, CE0/CE1, BE0–BE3, ADS, CNTEN, and CNTRST. Its pipelined output mode introduces one-cycle latency between clock and valid data, enabling deterministic timing at 133 MHz.

Each port features independent OPT pins (OPTL/OPTR) that configure its VDDQ supply (3.3 V or 2.5 V), allowing mixed-voltage system interfacing. The internal address counter-enabled via CNTEN and reset via CNTRST-operates independently per port and advances on CLK rising edges without requiring external address sequencing.

Key Specifications

Pinout & Package

70V3579S5DR is packaged in a 208-pin Plastic Quad Flatpack (PQFP) with 0.5 mm lead pitch and 28 mm × 28 mm body size. Pin functions are symmetrically distributed across left (L) and right (R) ports, each with dedicated clocks, enables, address/data buses, and power domains.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33256P-133JCIN, the 70V3579S5DR uniquely delivers mixed-voltage I/O flexibility, hardware address counting, and guaranteed 5 ns pipelined access-critical for real-time deterministic systems where external logic minimization and voltage domain bridging are design priorities.

Availability

70V3579S5DR is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and avionics applications requiring stable component supply, long-term lifecycle support, and industrial-grade thermal performance.

Supply support for 70V3579S5DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing markets.

The 70V3579S5DR belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for deterministic, low-latency inter-processor and FPGA-processor data exchange in industrial and telecom equipment.

FAQ

What is the maximum operating frequency of the 70V3579S5DR?

The 70V3579S5DR supports a maximum clock frequency of 133 MHz, corresponding to a 7.5 ns pipelined cycle time. This specification applies across the full industrial temperature range (−40°C to +85°C) and is validated for both 3.3 V and 2.5 V I/O configurations. The device achieves this speed through fully registered synchronous inputs and optimized internal memory cell timing.

Does the 70V3579S5DR support independent voltage supplies for each port?

Yes, the 70V3579S5DR supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VIH configures the left port for 3.3 V operation (VDDQL = 3.3 V), while setting it to VIL configures it for 2.5 V (VDDQL = 2.5 V); the right port operates identically but independently. The core VDD remains fixed at 3.3 V for both configurations.

How does the internal address counter function in the 70V3579S5DR?

The 70V3579S5DR includes a hardware address counter per port, enabled by asserting CNTENL/CNTENR low. On each rising CLK edge, the counter increments automatically-eliminating the need for external address generation logic. CNTRSTL/CNTRSTR asynchronously resets the counter to zero. This feature is especially valuable in burst-mode data acquisition and streaming applications.

What package options are available for the 70V3579S5DR?

The 70V3579S5DR is offered in three package variants: 208-pin Plastic Quad Flatpack (PQFP), 208-pin fine-pitch Ball Grid Array (fpBGA), and 256-pin Ball Grid Array (BGA). The "S5DR" suffix specifically denotes the 208-pin PQFP package with industrial temperature qualification and green (RoHS-compliant) construction.

Can the 70V3579S5DR perform simultaneous read and write operations on the same memory location?

Yes, the 70V3579S5DR uses true dual-port memory cells that permit simultaneous, independent read and write access to the exact same memory address-one port reading while the other writes. This capability enables lock-free inter-processor communication and eliminates arbitration overhead in real-time systems.