Renesas 70V3579S6BF8

Overview

70V3579S6BF8 from Integrated Device Technology is a high-speed 32K × 36-bit synchronous dual-port static RAM with pipelined output, 4.2 ns clock-to-data access (max), 7.5 ns cycle time (133 MHz), and independent 3.3 V or 2.5 V I/O voltage selection per port. It enables simultaneous read/write access to the same memory location in telecom switching fabric, packet buffer, and FPGA co-processor applications.

For engineers reviewing the 70V3579S6BF8 datasheet, 70V3579S6BF8 pinout, 70V3579S6BF8 application, or 70V3579S6BF8 equivalent, this device supports depth expansion via dual chip enables, offers counter-enabled burst addressing, and delivers 9.6 Gbps aggregate bandwidth with full synchronous operation on both ports under industrial temperature conditions.

Technical Context

The 70V3579S6BF8 implements true dual-port SRAM cells with fully registered address, data, and control inputs on both left and right ports-enabling minimal setup (1.8 ns) and hold (0.7 ns) times at 133 MHz. Its pipelined output mode introduces one-cycle latency for deterministic timing closure in high-speed systems.

Each port features independent OPT pins to select 3.3 V or 2.5 V I/O voltage levels, with dedicated VDDQ supplies; core logic remains at fixed 3.3 V. The integrated address counter, enabled by CNTEN and reset by CNTRST, allows sequential burst access without external address generation.

Key Specifications

Pinout & Package

70V3579S6BF8 is housed in a 208-pin Plastic Quad Flatpack (PQFP) with 17 mm × 17 mm body and 1.0 mm ball-pitch equivalent footprint. All VDD pins require 3.3 V supply; VDDQL/VDDQR must match OPTL/OPTR logic level (3.3 V if VIH, 2.5 V if VIL); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-100AXC, 70V3579S6BF8 delivers 33% higher bandwidth and mixed-voltage I/O; versus IDT70V3599S6PF8, it trades density for lower power and cost in constrained buffer designs.

Availability

70V3579S6BF8 is available at Aetrix Electronics and suitable for telecom switching fabric, high-speed packet buffering, and FPGA co-processor memory applications requiring stable component supply across extended product lifecycles.

Supply support for 70V3579S6BF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory, and RF solutions for communications, computing, and industrial markets.

The 70V3579S6BF8 belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for deterministic, low-latency data exchange between parallel processing elements in networking and real-time control systems.

FAQ

What is the maximum operating frequency of the 70V3579S6BF8?

The 70V3579S6BF8 supports up to 133 MHz operation, corresponding to a 7.5 ns clock cycle time in pipelined mode. This is validated across the industrial temperature range (–40°C to +85°C) and confirmed in the AC Electrical Characteristics table (tCYC2 = 7.5 ns max). The 70V3579S6BF8 achieves this with 4.2 ns clock-to-data access and 1.8 ns input setup time, making it suitable for high-bandwidth interconnect applications.

Does the 70V3579S6BF8 support independent voltage selection on each port?

Yes, the 70V3579S6BF8 supports independent I/O voltage selection per port via OPTL and OPTR pins. Setting OPTL to VIH (3.3 V) configures VDDQL for 3.3 V operation; setting it to VIL (0 V) configures VDDQL for 2.5 V. The same applies to OPTR and VDDQR. Core VDD remains fixed at 3.3 V. This capability is explicitly documented in Truth Table II and DC Operating Conditions tables.

How does the address counter function in the 70V3579S6BF8?

The 70V3579S6BF8 includes an internal address counter controlled by CNTENL/CNTENR and CNTRSTL/CNTRSTR. When CNTEN = VIL on the rising clock edge, the counter advances automatically-regardless of CE or BE states-enabling burst access without external address increment logic. CNTRST asynchronously resets the counter to zero. This feature is detailed in Truth Table II and Timing Waveform Figures 13–14.

What package type is used for the 70V3579S6BF8?

The 70V3579S6BF8 uses a 208-pin Plastic Quad Flatpack (PQFP) package, designated DRG208 in IDT documentation. It measures approximately 17 mm × 17 mm with 1.0 mm lead pitch. Pin configuration diagrams (pages 4–5 of the datasheet) confirm all 208 pins-including dedicated VDD, VSS, VDDQL, VDDQR, OPT, and dual CE pairs-are fully populated and electrically assigned.

Is the 70V3579S6BF8 suitable for industrial temperature applications?

Yes, the 70V3579S6BF8 is qualified for industrial temperature operation from –40°C to +85°C. This is explicitly stated in the "Recommended Operating Temperature" table (page 6), AC timing specifications (70V3579S5 and 70V3579S6 columns), and DC current tables (ISB1–ISB4 rows labeled "IND"). The "S6" speed grade in the part number denotes commercial-only timing, but the device itself is rated for industrial ambient conditions.