Renesas 70V3579S6DR

Overview

70V3579S6DR from IDT (now Renesas) is a high-speed 32K × 36-bit synchronous dual-port static RAM with pipelined output, 6 ns max clock-to-data access, 7.5 ns cycle time (133 MHz), and independent 3.3 V or 2.5 V I/O voltage selection per port. It enables simultaneous read/write access to the same memory location in telecom packet buffers, network switch fabric controllers, and real-time DSP co-processor interfaces.

For engineers reviewing the 70V3579S6DR datasheet, 70V3579S6DR pinout, 70V3579S6DR application, or 70V3579S6DR equivalent, key selection criteria include pipelined latency timing, dual-voltage I/O flexibility (3.3 V/2.5 V per port), industrial-grade temperature support (–40°C to +85°C), and depth-expansion capability via dual chip enables without external logic.

Technical Context

The 70V3579S6DR implements full synchronous operation on both ports using edge-triggered registers for address, data, and all control signals-including R/W, CE0/CE1, BE0–BE3, and ADS-ensuring deterministic setup/hold timing at 133 MHz. Its pipelined output mode introduces one-cycle latency but enables sustained burst throughput.

Each port features independent OPT pins (OPTL/OPTR) that configure its VDDQ supply (3.3 V or 2.5 V), allowing mixed-voltage system interfacing. The integrated address counter-enabled by CNTEN and reset by CNTRST-supports sequential burst access without external address generation logic.

Key Specifications

Pinout & Package

70V3579S6DR is packaged in a 208-pin Plastic Quad Flatpack (PQFP) with 0.5 mm lead pitch and 28 mm × 28 mm body size. All VDD pins require 3.3 V; VDDQL/VDDQR must match OPTL/OPTR logic levels (3.3 V if VIH, 2.5 V if VIL); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1375DV33-167AXC and AS7C33256PFS-10BIN, the 70V3579S6DR uniquely delivers per-port 2.5 V/3.3 V I/O configurability and integrated address counter-reducing BOM count and PCB complexity in heterogeneous voltage systems requiring burst-mode memory access.

Availability

70V3579S6DR is available at Aetrix Electronics and suitable for telecom infrastructure, network switching, and real-time signal processing applications requiring stable component supply, long-term lifecycle support, and industrial temperature compliance.

Supply support for 70V3579S6DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 70V3579S6DR belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for low-latency, concurrent-access memory subsystems in packet-processing, switch fabric, and DSP co-processor architectures.

FAQ

What is the maximum operating frequency of the 70V3579S6DR?

The 70V3579S6DR supports a 7.5 ns clock cycle time, enabling operation at 133 MHz. This is validated for the S6 speed grade across commercial and industrial temperature ranges. Timing parameters such as tCD2 (clock-to-data) are guaranteed at 6 ns maximum under these conditions, ensuring reliable pipelined read performance in high-throughput systems.

Does the 70V3579S6DR support mixed I/O voltages on left and right ports?

Yes, the 70V3579S6DR supports independent I/O voltage selection: OPTL configures the left port's VDDQL (3.3 V or 2.5 V), and OPTR configures the right port's VDDQR. This allows one port to operate at 3.3 V while the other runs at 2.5 V-enabling direct interfacing with heterogeneous logic families without external level shifters.

How does the address counter function in the 70V3579S6DR?

The 70V3579S6DR includes an internal 15-bit address counter per port, controlled by CNTENL/CNTENR and CNTRSTL/CNTRSTR. When CNTEN = VIL on the rising CLK edge, the counter advances automatically. ADS = VIH selects counter output; ADS = VIL loads external address. This eliminates need for external counter logic in burst-mode applications like video line buffering.

What package options are available for the 70V3579S6DR?

The 70V3579S6DR is offered in a 208-pin Plastic Quad Flatpack (PQFP) with 28 mm × 28 mm body and 0.5 mm lead pitch. While the datasheet references 208-pin fpBGA and 256-pin BGA variants for the 70V3579 family, the S6DR suffix specifically denotes the PQFP package-confirmed by ordering information and pin diagram DRG208(5).

What is the power consumption profile of the 70V3579S6DR in standby mode?

In full standby (ISB3), where both ports are disabled with CMOS-level inputs, the 70V3579S6DR draws 6 mA typical (15 mA max). In partial standby (ISB2), with one port active and outputs disabled, it consumes 175 mA typical (225 mA max) at 133 MHz. These values are specified at VDD = 3.3 V and support thermal design in densely packed telecom modules.