Renesas 70V3589S133BF8

Overview

70V3589S133BF8 from IDT (now Renesas) is a high-speed 128K × 36-bit synchronous dual-port static RAM with true dual-port architecture enabling simultaneous read/write access to the same memory location from independent left and right ports. It operates at 133 MHz (7.5 ns cycle time), supports selectable pipelined or flow-through output modes, and features dual 3.3 V/2.5 V I/O voltage capability per port - used in high-bandwidth packet buffering, telecom line cards, and FPGA co-processor memory interfaces.

For engineers reviewing the 70V3589S133BF8 datasheet, 70V3589S133BF8 pinout, 70V3589S133BF8 application, or 70V3589S133BF8 equivalent, key selection criteria include its 133 MHz industrial-grade timing (–40°C to +85°C), dual-voltage I/O flexibility (3.3 V or 2.5 V per port), JTAG IEEE 1149.1 compliance, and support for depth expansion via dual chip enables without external logic.

Technical Context

This device implements fully synchronous dual-port operation with independent clock domains (CLKL/CLKR), register-controlled address/data/control inputs, and self-timed write cycles enabling minimal setup/hold times (1.7 ns setup, 0.5 ns hold @ 166 MHz). Its dual-port memory array allows concurrent access without arbitration logic, while the counter-enable and repeat features support burst-mode sequential addressing.

The 70V3589S133BF8 supports configurable I/O voltage per port via OPTL/OPTR pins - each port independently selects 3.3 V (±150 mV) or 2.5 V (±100 mV) I/O supply - with core VDD fixed at 3.3 V. Dual-cycle deselect (DCD) and pipelined output mode enable deterministic latency control for time-critical inter-processor communication.

Key Specifications

Pinout & Package

70V3589S133BF8 is housed in a 208-pin fine-pitch Ball Grid Array (fpBGA) package with 0.8 mm ball pitch and 15 mm × 15 mm footprint. Power and ground balls are distributed across the array for low-inductance decoupling; VDD (core) and VDDQ (I/O) supplies are segregated per port to support independent voltage selection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362KV18-133BZI and AS7C33128PFS-133BIN, the 70V3589S133BF8 uniquely delivers per-port 2.5 V/3.3 V I/O configurability in a compact fpBGA, making it optimal for mixed-voltage, space-constrained systems requiring full 36-bit width and industrial temperature operation.

Availability

70V3589S133BF8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and avionics data acquisition requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 70V3589S133BF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory, and interface solutions for high-performance computing and communications systems.

The 70V3589S133BF8 belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for applications demanding deterministic latency, concurrent access, and mixed-voltage interoperability in telecom, test equipment, and real-time control systems.

FAQ

What is the maximum operating frequency of the 70V3589S133BF8?

The 70V3589S133BF8 is rated for 133 MHz operation across the industrial temperature range (–40°C to +85°C), with a guaranteed 7.5 ns clock cycle time and 4.2 ns maximum clock-to-data valid (tCD2) in pipelined mode. This specification is validated under worst-case voltage (3.15 V VDD) and temperature conditions, ensuring robust timing margin in production systems.

Does the 70V3589S133BF8 support both 2.5 V and 3.3 V I/O interfaces simultaneously?

Yes - the 70V3589S133BF8 supports independent I/O voltage selection per port via OPTL and OPTR pins. The left port can operate at 3.3 V while the right port runs at 2.5 V (or vice versa), with corresponding VDDQL and VDDQR supplies set accordingly. This enables direct interfacing with heterogeneous logic families without external level shifters.

What package type is used for the 70V3589S133BF8?

The 70V3589S133BF8 uses a 208-pin fine-pitch Ball Grid Array (fpBGA) package with 0.8 mm ball pitch and a 15 mm × 15 mm body size. This package provides superior thermal performance and signal integrity over PQFP alternatives, and supports high-density routing for high-speed memory interfaces.

How does the dual chip enable feature work on the 70V3589S133BF8?

The 70V3589S133BF8 implements two chip enables per port (CE0L/CE1L and CE0R/CE1R). When configured in depth-expansion mode, CE0 enables the device while CE1 controls cascaded devices - allowing up to four 128K×36 devices to form a 512K×36 memory without external decoding logic. This simplifies design and improves timing predictability.

Is JTAG boundary-scan supported on the 70V3589S133BF8?

Yes - the 70V3589S133BF8 integrates a fully compliant IEEE 1149.1 JTAG TAP controller with TCK, TMS, TDI, TDO, and TRST pins. This enables boundary-scan testing of PCB interconnects, in-system programming of configuration registers, and visibility into internal memory states during development and field diagnostics.