Renesas 70V3599S133BCI

Overview

70V3599S133BCI from IDT (now Renesas) is a high-speed 128K × 36-bit synchronous dual-port SRAM with true dual-port architecture enabling simultaneous read/write access to the same memory location from independent left and right ports. It operates at 133MHz (7.5ns cycle time), supports selectable pipelined or flow-through output modes, and features dual 3.3V/2.5V I/O voltage capability per port - used in high-bandwidth packet buffering, telecom line cards, and FPGA co-processor memory interfaces.

For engineers reviewing the 70V3599S133BCI datasheet, 70V3599S133BCI pinout, 70V3599S133BCI application, or 70V3599S133BCI equivalent, key selection criteria include guaranteed 133MHz industrial-grade timing (–40°C to +85°C), JTAG IEEE 1149.1 compliance, dual-voltage I/O flexibility (3.3V/2.5V per port), and depth-expansion support via dual chip enables without external logic.

Technical Context

This device implements fully synchronous dual-port operation with registered address, data, byte enable, and control inputs on both ports - delivering 1.7ns setup and 0.5ns hold times at 166MHz. Its self-timed write architecture enables fast cycle time while maintaining deterministic timing across temperature and voltage.

The memory integrates independent address counters with repeat and enable features per port, plus Dual Cycle Deselect (DCD) for pipelined mode. Each port supports configurable I/O voltage (3.3V or 2.5V) via dedicated OPT pins and VDDQ supplies, with core powered by fixed 3.3V VDD.

Key Specifications

Pinout & Package

208-pin fine-pitch Ball Grid Array (fpBGA), 15mm × 15mm × 1.4mm body, 0.8mm ball pitch. All VDD pins require 3.3V supply; VDDQ pins must match OPT pin state (3.3V if OPT = VIH, 2.5V if OPT = VIL).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C33128PFSIG-133, the 70V3599S133BCI uniquely delivers per-port 2.5V/3.3V I/O selection, integrated JTAG, and hardware address counter - making it the only option supporting mixed-voltage FPGA interfaces with full test coverage and autonomous burst transfers.

Availability

70V3599S133BCI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial motion control, and avionics data acquisition systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 70V3599S133BCI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V3599S133BCI belongs to IDT's high-speed synchronous dual-port SRAM product line, designed specifically for applications demanding deterministic low-latency memory access with independent dual-port concurrency - such as network packet processing, real-time control, and FPGA acceleration.

FAQ

What is the guaranteed maximum operating frequency of the 70V3599S133BCI across its full industrial temperature range?

The 70V3599S133BCI is rated for guaranteed operation up to 133MHz (7.5ns cycle time) over the full industrial temperature range of –40°C to +85°C. This specification is validated per AC Electrical Characteristics Table 11 in the official datasheet and applies to both pipelined and flow-through output modes under specified supply and loading conditions.

Does the 70V3599S133BCI support independent I/O voltage selection on each port, and how is it configured?

Yes, the 70V3599S133BCI supports independent 3.3V or 2.5V I/O operation per port. Configuration is achieved via the OPTL and OPTR pins: setting OPTX to VIH (3.3V) selects 3.3V I/O levels and requires VDDQX = 3.3V; setting OPTX to VIL (0V) selects 2.5V I/O levels and requires VDDQX = 2.5V. Both ports may operate at the same or different voltages simultaneously.

What package type and footprint does the 70V3599S133BCI use, and what are its mechanical dimensions?

The 70V3599S133BCI uses a 208-pin fine-pitch Ball Grid Array (fpBGA) package, designated as BF208. Its body measures approximately 15mm × 15mm × 1.4mm with a 0.8mm ball pitch. The package drawing and pin map are documented in the "Pin Configuration" section of the datasheet (page 3, Figure drw 02c).

How does the Dual Cycle Deselect (DCD) feature function in the 70V3599S133BCI, and in which output mode is it active?

Dual Cycle Deselect (DCD) is active only in pipelined output mode (when PL/FTX = VIH). In this mode, chip enables (CE0X/CE1X) and byte enables (BEX) are double-buffered - meaning a change in these signals takes two clock cycles to propagate through the internal logic and affect output enable/disable behavior. This prevents metastability and ensures clean bus release during depth expansion.

Is JTAG boundary-scan support available on the 70V3599S133BCI, and which IEEE standard does it comply with?

Yes, the 70V3599S133BCI includes full IEEE 1149.1-compliant JTAG boundary-scan support. Pins TDI, TDO, TCK, TMS, and TRST are dedicated to the test access port (TAP), enabling in-system interconnect testing, device identification, and debug capabilities without requiring additional test fixtures.