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Renesas 70V3599S166BC8
- Part No.:
- 70V3599S166BC8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 256-LBGA
- Datasheet:
-
70V3599S166BC8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 256CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,108
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Product details
Overview
70V3599S166BC8 from IDT (now Renesas) is a high-speed 128K × 36-bit synchronous dual-port SRAM with true dual-port architecture enabling simultaneous read/write access to the same memory location from independent left and right ports. It operates at 166MHz with 3.6ns clock-to-data-out (pipelined), supports selectable 3.3V or 2.5V I/O interfaces per port, and delivers 12Gbps aggregate bandwidth. It is used in high-throughput packet buffering and real-time digital signal processing systems requiring deterministic latency.
For engineers reviewing the 70V3599S166BC8 datasheet, 70V3599S166BC8 pinout, 70V3599S166BC8 application, or 70V3599S166BC8 equivalent, this page provides verified specifications, validated pin functions, confirmed industrial-temperature operation at 133MHz, JTAG-compliant test support, and precise package mapping for the 256-pin BGA (BC256).
Technical Context
This device implements fully synchronous dual-port operation with independent clock domains (CLKL/CLKR), pipelined or flow-through output modes controlled by PL/FTL and PL/FTR pins, and self-timed write cycles that minimize cycle time dependency on external timing margins. Each port includes dedicated address strobe (ADSL/ADSR), counter enable (CNTENL/CNTENR), and repeat (REPEATL/REPEATR) logic for burst address generation.
It features dual chip enables (CE0X/CE1X) per port for seamless depth expansion without external logic, separate byte enables (BE0X–BE3X) supporting 9-bit byte granularity, and independent VDDQ voltage selection (3.3V or 2.5V) via OPTL/OPTR pins-enabling mixed-voltage system interfacing while maintaining 3.3V core supply (VDD).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits (4.608 Mbit), true dual-port cell array enabling concurrent access |
| Max Clock Frequency | 166MHz (commercial grade), delivering 6ns cycle time and 12Gbps total bandwidth |
| Access Time | 3.6ns clock-to-data-out (tCD2) in pipelined mode at 166MHz - defines minimum read latency |
| I/O Voltage Support | Selectable 3.3V (±150mV) or 2.5V (±100mV) per port via OPTL/OPTR - enables mixed-voltage interconnect |
| Operating Temperature | Commercial: 0°C to +70°C; Industrial: –40°C to +85°C at 133MHz - validated thermal range |
| Power Supply | 3.3V ±150mV core (VDD); independent VDDQL/VDDQR per port - decoupled I/O and core domains |
| JTAG Compliance | IEEE 1149.1 boundary-scan support with TCK, TMS, TDI, TDO, TRST - enables production testability |
Pinout & Package
70V3599S166BC8 is packaged in a 256-pin Ball Grid Array (BGA) with 1.0mm ball pitch and 17mm × 17mm body size (package code BC256). Pin functions are validated per official Renesas pin configuration diagrams for BC256.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLKL / CLKR | Port-specific clock inputs | Synchronous timing reference for left/right port operations; enables independent clock domain control |
| A0L–A16L / A0R–A16R | Address inputs | 17-bit address bus per port; A16 is no-connect for 128K configuration |
| I/O0L–I/O35L / I/O0R–I/O35R | Bidirectional data I/O | 36-bit data interface per port; supports byte-wise read/write via BE0X–BE3X |
| CE0L/CE1L / CE0R/CE1R | Dual chip enables | Two-level enable hierarchy per port - allows depth expansion without external logic |
| R/WL / R/WR | Read/write direction control | Active-high on left port, active-low on right port - matches standard dual-port polarity conventions |
| OEL / OER | Output enable | Asynchronous control of output drivers - enables tri-state during bus sharing |
| PL/FTL / PL/FTR | Pipeline/flow-through mode select | DC-level input selecting output register behavior - determines tCD1 vs. tCD2 latency path |
| OPTL / OPTR | I/O voltage option select | VIH = 3.3V I/O mode; VIL = 2.5V I/O mode - configures VDDQX supply requirement |
| TDI / TDO / TCK / TMS / TRST | JTAG test interface | Fully compliant IEEE 1149.1 boundary-scan chain - supports automated test and debug |
Key Features
| Feature | Design Value |
|---|---|
| True dual-port memory cells | Enables simultaneous, independent read/write access to identical addresses - eliminates arbitration overhead in real-time systems |
| Selectable pipelined or flow-through output | Configurable latency: 3.6ns (pipelined) or 12ns (flow-through) - balances speed vs. timing margin requirements |
| Dual-cycle deselect (DCD) | Prevents metastability during fast chip disable - ensures clean output disable in pipelined mode |
| Independent per-port I/O voltage selection | Supports 3.3V/2.5V mixed-voltage designs without level shifters - reduces BOM count and layout complexity |
| Counter enable and repeat functionality | Hardware address incrementing and auto-repeat on ADS assertion - accelerates sequential burst transfers |
| Full synchronous operation on both ports | All inputs registered on rising clock edge - simplifies timing closure in high-frequency FPGA/ASIC interfaces |
Applications
| Packet Buffering in Network Switches | Real-Time DSP Data Exchange |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet frames between ingress and egress ASICs in Layer 2/L3 switches. IC Role / Device Role / Timing Role: Dual-port SRAM acts as non-blocking shared buffer - left port accepts incoming packets while right port services outgoing scheduler. Use Value: 128K × 36 organization supports >4MB frame buffers; 166MHz operation sustains line-rate 10GbE traffic with sub-4ns read latency. | Use Scenario: Exchanging coefficient and sample data between two parallel DSP cores executing filter banks or FFT pipelines. IC Role / Device Role / Timing Role: Serves as low-latency inter-processor memory - one core writes processed samples while the other reads for next-stage computation. Use Value: True dual-port concurrency eliminates software synchronization; pipelined mode delivers deterministic 3.6ns read response for tight-loop control. |
| Radar Signal Processing FIFO | Industrial Motion Controller Memory |
Use Scenario: Buffering ADC samples from phased-array radar receivers before beamforming computation. IC Role / Device Role / Timing Role: Acts as high-bandwidth first-in-first-out memory - ADC streams into left port while DSP reads from right port at synchronized rate. Use Value: 12Gbps aggregate bandwidth handles multi-channel 12-bit @ 250MSPS; industrial temp rating ensures reliability in avionics enclosures. | Use Scenario: Storing motion trajectory tables and real-time position feedback in CNC machine controllers. IC Role / Device Role / Timing Role: Provides deterministic-access shared memory between ARM-based motion planner and FPGA-based servo loop engine. Use Value: Flow-through mode enables <12ns read access for jitter-sensitive position updates; -40°C to +85°C rating supports factory floor deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-166AXC | 128K × 36, 166MHz, 3.3V-only I/O (no 2.5V option), different pinout (208-pin TQFP) | Lacks per-port voltage flexibility; requires board redesign for 2.5V interface compatibility | Choose when 3.3V-only interface suffices and TQFP packaging is preferred for prototyping. |
| IS61WV102432ALL-166BLI | 1M × 32, 166MHz, asynchronous dual-port (not synchronous), 3.3V core/I/O only | No clock-domain synchronization; higher density but incompatible timing model and no JTAG | Consider only for legacy asynchronous designs where synchronous control and IEEE 1149.1 are not required. |
Compared with CY7C1362BV33-166AXC and IS61WV102432ALL-166BLI, the 70V3599S166BC8 uniquely supports per-port 2.5V/3.3V I/O selection, offers IEEE 1149.1 JTAG, and guarantees true synchronous dual-port timing - making it the only option for mixed-voltage, high-reliability, testable synchronous memory subsystems.
Availability
70V3599S166BC8 is available at Aetrix Electronics and suitable for high-speed networking equipment, real-time DSP subsystems, radar signal processors, and industrial motion controllers requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 70V3599S166BC8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions for automotive, industrial, and communications markets.
The 70V3599S166BC8 belongs to Renesas' high-speed synchronous dual-port SRAM product line, designed specifically for deterministic-latency, high-bandwidth data exchange between independent processing domains in telecom infrastructure and real-time embedded systems.
FAQ
What is the maximum operating frequency of the 70V3599S166BC8?
The 70V3599S166BC8 is rated for 166MHz operation in commercial temperature range (0°C to +70°C), achieving a 6ns clock cycle time and 3.6ns clock-to-data-out in pipelined mode. At industrial temperatures (–40°C to +85°C), its maximum validated frequency is 133MHz with 4.2ns tCD2 - confirmed in Renesas datasheet revision Feb.03.20, Table 11.
Does the 70V3599S166BC8 support mixed-voltage I/O interfaces?
Yes, the 70V3599S166BC8 supports independent 3.3V or 2.5V I/O operation per port via OPTL and OPTR pins. When OPTL = VIH (3.3V), VDDQL must be 3.3V; when OPTL = VIL (0V), VDDQL must be 2.5V - enabling mixed-voltage connectivity without external level shifters, as specified in datasheet section "Pin Names" and Table 5a/5b.
What package type is used for the 70V3599S166BC8?
The 70V3599S166BC8 uses a 256-pin Ball Grid Array (BGA) package with 1.0mm ball pitch and 17mm × 17mm body size, identified by package code BC256. This is distinct from the 208-pin fpBGA (BFG208) and PQFP (DRG208) variants - confirmed in datasheet "Pin Configuration" pages 3 and 4.
How does the 70V3599S166BC8 handle simultaneous access to the same memory location?
The 70V3599S166BC8 employs true dual-port memory cells that allow fully concurrent read and write operations to the same address from left and right ports - no arbitration or collision detection required. This is explicitly stated in the "Features" section and enabled by dedicated write and read paths within each memory cell, ensuring deterministic behavior in real-time systems.
Is JTAG boundary-scan supported on the 70V3599S166BC8?
Yes, the 70V3599S166BC8 fully supports IEEE 1149.1 JTAG boundary-scan with dedicated TCK, TMS, TDI, TDO, and TRST pins. This capability is documented in the "Features" list and "Pin Names" table, enabling production test, debug, and in-system verification - critical for high-reliability networking and aerospace applications.
70V3599S166BC8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 256-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Dual Port, Synchronous
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.6 ns
- Voltage - Supply:
- 3.15V ~ 3.45V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 256-CABGA (17x17)
70V3599S166BC8 FAQ
1.How can I place an order for 70V3599S166BC8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 70V3599S166BC8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 70V3599S166BC8 reliable?
The price and inventory of 70V3599S166BC8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 70V3599S166BC8 is usually 5 days.
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Once your 70V3599S166BC8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 70V3599S166BC8?
For technical support, including 70V3599S166BC8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 70V3599S166BC8 requirements.
6.How does Aetrix verify that 70V3599S166BC8 is sourced from the original manufacturer or authorized distributors?
All 70V3599S166BC8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 70V3599S166BC8 meets industry standards.
7.What is the process for return or replacement of 70V3599S166BC8?
All 70V3599S166BC8 units undergo pre-shipment inspection (PSI). If there is an issue with 70V3599S166BC8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 70V3599S166BC8 part is unused and in its original packaging.
Return procedure for 70V3599S166BC8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
70V3599S166BC8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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