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Renesas 70V657S12BF8

Part No.:
70V657S12BF8
Manufacturer:
Renesas
Category:
Memory
Package:
208-LFBGA
Datasheet:
Aetrix70V657S12BF8.pdf
Description:
IC SRAM 1.125MBIT PAR 208CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,291

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Product details

Overview

70V657S12BF8 from IDT is a high-speed 32K x 36 asynchronous dual-port static RAM with true independent left/right ports, 12 ns maximum access time (commercial/industrial), LVTTL-compatible 3.3 V core supply, and selectable 3.3 V/2.5 V I/O voltage per port via OPTL/OPTR pins. It enables simultaneous read/write to the same memory location in real-time communication buffers and FPGA co-processor interfaces.

For engineers reviewing the 70V657S12BF8 datasheet, 70V657S12BF8 pinout, 70V657S12BF8 application, or 70V657S12BF8 equivalent, this page delivers verified timing parameters, port arbitration behavior, byte-enable granularity, JTAG 1149.1 compliance, and industrial-grade thermal performance for deterministic dual-access memory design.

Technical Context

The 70V657S12BF8 implements fully asynchronous dual-port architecture with on-chip semaphore logic, independent CE0/CE1 and BE0–BE3 controls per port, and master/slave arbitration via M/S pin. BUSYR/BUSYL flags are non-tri-state totem-pole outputs that assert during address contention between ports.

It supports depth expansion using dual chip enables and data bus widening to 72+ bits via cascaded MASTER/SLAVE configuration. The device uses true dual-port SRAM cells-not FIFO or register-based emulation-and provides automatic power-down when either CE0 or CE1 is deasserted.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 32K x 36 bits (1.152 Mbit); A16 and A15 are no-connects, limiting address space to 15-bit (32K) depth
Access Time (tAA) 12 ns max - guarantees deterministic read latency under worst-case commercial/industrial conditions
I/O Voltage Support Selectable 3.3 V (±150 mV) or 2.5 V (±100 mV) per port via OPTL/OPTR; core VDD fixed at 3.3 V
Operating Temperature –40°C to +85°C - qualified for industrial ambient operation without derating
Port Arbitration Hardware semaphore logic with SEMR/SEML inputs and BUSYR/BUSYL flags; priority resolved by tAPS (5 ns setup)
JTAG Compliance IEEE 1149.1 boundary-scan support via TDI/TDO/TCK/TMS/TRST pins for production testability
Power Consumption ISB3 = 6 mA max (full standby, CMOS inputs); IDD = 490 mA max (both ports active, fMAX)

Pinout & Package

70V657S12BF8 is packaged in a 208-ball fine-pitch BGA (BF208 package), body size ≈15 mm × 15 mm × 1.4 mm, 0.8 mm ball pitch. All VDD pins require 3.3 V; VDDQL/VDDQR must match OPTL/OPTR selection (3.3 V or 2.5 V).

Pin/Terminal Circuit Role Design Meaning
CE0L / CE0R Chip Enable (Left/Right) Active-low enable for port-specific memory access; CE0X = VIL and CE1X = VIH required for valid access
R/WL / R/WR Read/Write Control (Left/Right) Active-low write enable; high = read mode, low = write mode; controls direction of I/Ox pins
BE0L–BE3L / BE0R–BE3R Byte Enables (9-bit groups) Independent 9-bit write masking: BE0L enables I/O0L–I/O8L, BE3L enables I/O27L–I/O35L
A0L–A14L / A0R–A14R Address Inputs (Left/Right) 15-bit address bus (A15/A16 are NC per datasheet note); supports 32K depth addressing
I/O0L–I/O35L / I/O0R–I/O35R Bidirectional Data Bus (Left/Right) Two independent 36-bit data paths; tri-stated when OE = VIH or CE inactive
OPTL / OPTR I/O Voltage Select (Left/Right) VIH = 3.3 V I/O mode (VDDQX = 3.3 V); VIL = 2.5 V I/O mode (VDDQX = 2.5 V); independent per port
M/S Master/Slave Select VIH = Master (BUSYX is output); VIL = Slave (BUSYX is input); determines arbitration role in cascaded systems
SEML / SEMR Semaphore Enable Active-high enable for 8-bit semaphore flag access via I/O0–I/O35; used for inter-port synchronization
BUSYL / BUSYR Busy Flag (Left/Right) Non-tri-state totem-pole output (Master) or input (Slave); asserts during address contention or write collision
TMS/TCK/TDI/TDO/TRST JTAG Test Interface Full IEEE 1149.1 boundary-scan support; enables structural testing without external probing

Key Features

Feature Design Value
True Dual-Port Architecture Simultaneous independent read/write to identical addresses without external arbitration logic or cycle penalty
Per-Port I/O Voltage Flexibility Left and right ports can operate at 3.3 V, 2.5 V, or mixed voltages-enabling seamless interfacing with heterogeneous logic families
Hardware Semaphore Logic On-chip 8-bit semaphore register accessible via A0–A2 and I/O0–I/O35; eliminates need for external semaphores or software locks
Depth Expansion Capability Dual CE0/CE1 enables allow stacking multiple devices vertically without external decode logic for >32K depth
Industrial Temperature Range Guaranteed 12 ns access and full functionality from –40°C to +85°C-no derating required for embedded control or telecom applications
JTAG Boundary-Scan Support Reduces test development time and improves fault coverage in high-density PCB assemblies with limited physical probe access

Applications

Telecom Line Card Buffering FPGA Co-Processor Memory

Use Scenario: Bidirectional packet buffering between line interface ASIC and backplane switch fabric in carrier-grade Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acts as zero-latency, contention-free data exchange buffer; left port connects to ASIC, right port to FPGA-based scheduler.

Use Value: Eliminates pipeline stalls during simultaneous ingress/egress traffic bursts; 12 ns access ensures sub-100 ns round-trip latency for real-time QoS enforcement.

Use Scenario: Shared instruction/data memory between host processor and FPGA-accelerated compute engine in radar signal processing subsystems.

IC Role / Device Role / Timing Role: Serves as coherent shared memory with hardware semaphore for critical section protection across heterogeneous processors.

Use Value: Enables lock-free synchronization for DMA transfers and interrupt-driven task handoff; avoids software mutex overhead and jitter.

Industrial PLC Real-Time I/O Avionics Data Concentrator

Use Scenario: Deterministic I/O mapping buffer in safety-critical programmable logic controllers handling analog/digital sensor inputs and actuator outputs.

IC Role / Device Role / Timing Role: Provides atomic read-modify-write capability for process variables; BUSY flag prevents race conditions during cyclic scan updates.

Use Value: Guarantees memory coherency across scan cycles at –40°C to +85°C without watchdog resets or firmware workarounds.

Use Scenario: Time-triggered data aggregation node consolidating ARINC 429, MIL-STD-1553, and discrete I/O streams in flight control computers.

IC Role / Device Role / Timing Role: Acts as deterministic, dual-access scratchpad memory for time-synchronized frame assembly and validation.

Use Value: Supports hard real-time deadlines (<10 µs jitter) via hardware arbitration and 12 ns access-critical for DO-254 Level A certification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1362BV33-12BGXI 32K x 36, 12 ns, 3.3 V only (no 2.5 V I/O option); no JTAG; different pinout (256-ball BGA) Lacks per-port voltage flexibility and IEEE 1149.1 test support; requires PCB redesign for migration Choose when JTAG and mixed-voltage I/O are not required, and board layout accommodates 256-ball footprint.
IDT70V659S12BF8 128K x 36 (4 Mbit), same 12 ns speed, identical pinout and feature set; A16/A15 functional (not NC) Provides 4× memory depth for larger buffer requirements; drop-in compatible in same BF208 package Choose when system demands >32K depth but retains identical timing, voltage, and interface behavior.

Compared with CY7C1362BV33-12BGXI, 70V657S12BF8 offers per-port I/O voltage selection and JTAG-critical for mixed-signal systems and high-reliability test coverage; compared with IDT70V659S12BF8, it trades depth for cost and power efficiency in constrained-buffer applications.

Availability

70V657S12BF8 is available at Aetrix Electronics and suitable for telecom line cards, industrial PLCs, avionics data concentrators, and FPGA co-processor designs requiring stable component supply, long-term lifecycle assurance, and industrial temperature qualification.

Supply support for 70V657S12BF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The IDT70V657 family targets deterministic dual-access memory applications requiring hardware arbitration, low-latency throughput, and robust operation across extended temperature ranges.

FAQ

What is the maximum operating frequency supported by the 70V657S12BF8?

The 70V657S12BF8 does not specify a clock frequency-it is an asynchronous SRAM. Its performance is defined by access time: 12 ns maximum tAA over the full industrial temperature range (–40°C to +85°C). System-level throughput depends on external controller timing margins and bus protocol, not internal clocking.

Does the 70V657S12BF8 support true simultaneous read/write to the same memory address?

Yes, the 70V657S12BF8 uses true dual-port SRAM cells enabling concurrent read and write operations to identical addresses. When contention occurs, hardware arbitration via BUSY flags ensures deterministic resolution-no data corruption or undefined states occur in the 70V657S12BF8.

How does the M/S pin affect BUSY pin behavior in the 70V657S12BF8?

In the 70V657S12BF8, M/S = VIH configures the device as Master: BUSYL/BUSYR become totem-pole outputs asserting during address contention. M/S = VIL configures it as Slave: BUSYL/BUSYR become inputs accepting external BUSY signals-enabling hierarchical arbitration in multi-device systems.

Can the left and right ports of the 70V657S12BF8 operate at different I/O voltages simultaneously?

Yes. OPTL and OPTR are independent inputs: setting OPTL = VIH and OPTR = VIL configures the left port for 3.3 V I/O levels (VDDQL = 3.3 V) and the right port for 2.5 V I/O levels (VDDQR = 2.5 V). This allows direct interfacing with mixed-voltage SoCs or FPGAs without level shifters.

What is the function of the semaphore logic in the 70V657S12BF8, and how is it accessed?

The 70V657S12BF8 includes eight hardware semaphore flags accessed via A0–A2 and I/O0–I/O35. To use them, set SEMX = VIL and CEX = VIH (opposite of memory access), then perform read/write cycles. This provides atomic synchronization primitives without software overhead or external components.

70V657S12BF8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
208-LFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Dual Port, Asynchronous
Memory Size:
1.125Mbit
Memory Organization:
32K x 36
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3.15V ~ 3.45V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
208-CABGA (15x15)

70V657S12BF8 FAQ

1.How can I place an order for 70V657S12BF8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 70V657S12BF8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 70V657S12BF8 reliable?

The price and inventory of 70V657S12BF8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 70V657S12BF8 is usually 5 days.

3.What payment methods are accepted for 70V657S12BF8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 70V657S12BF8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 70V657S12BF8?

70V657S12BF8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 70V657S12BF8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 70V657S12BF8?

For technical support, including 70V657S12BF8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 70V657S12BF8 requirements.

6.How does Aetrix verify that 70V657S12BF8 is sourced from the original manufacturer or authorized distributors?

All 70V657S12BF8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 70V657S12BF8 meets industry standards.

7.What is the process for return or replacement of 70V657S12BF8?

All 70V657S12BF8 units undergo pre-shipment inspection (PSI). If there is an issue with 70V657S12BF8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 70V657S12BF8 part is unused and in its original packaging.

Return procedure for 70V657S12BF8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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