Renesas 70V658S10DR

Overview

70V658S10DR from IDT is a high-speed 64K × 36 asynchronous dual-port static RAM with true independent left/right ports, 10 ns max read/write cycle time (commercial grade), LVTTL-compatible 3.3 V core supply, and selectable 3.3 V/2.5 V I/O voltage per port via OPT pins. It enables simultaneous access to the same memory location in real-time systems such as telecom line cards and packet buffer architectures.

For engineers reviewing the 70V658S10DR datasheet, 70V658S10DR pinout, 70V658S10DR application, or 70V658S10DR equivalent, key selection criteria include dual-port arbitration logic, on-chip semaphore signaling, byte-enable granularity for 9-bit data lanes, JTAG IEEE 1149.1 compliance, and support for MASTER/SLAVE cascading to expand bus width beyond 36 bits.

Technical Context

This device implements fully asynchronous dual-port operation: each port has independent address, control, and bidirectional I/O buses (I/O0L–I/O35L and I/O0R–I/O35R), with no shared clock or synchronization requirement. Port arbitration is handled entirely on-chip via BUSY/INT flags and SEM logic, eliminating external glue logic for contention resolution.

The 70V658S10DR supports mixed-voltage I/O operation-OPTL and OPTR independently configure left/right port I/O voltage to either 3.3 V (±150 mV) or 2.5 V (±100 mV), while VDD remains fixed at 3.3 V. A16 is NC (no connect), confirming its 64K × 36 density (A0–A15 = 16 address bits = 64K words).

Key Specifications

Pinout & Package

70V658S10DR is packaged in a 208-pin Plastic Quad Flatpack (PQFP), body size ≈28 mm × 28 mm × 3.5 mm, with 0.5 mm lead pitch. All VDD pins require connection to 3.3 V; VDDQ pins must match OPT pin configuration (3.3 V if OPT = VDD, 2.5 V if OPT = VSS); all VSS pins connect to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C1362BV33-10ZXC and AS7C362000B-10TIN, the 70V658S10DR uniquely delivers per-port I/O voltage selection, integrated semaphore registers, and IEEE 1149.1 JTAG-making it the only option that simultaneously satisfies mixed-voltage interfacing, hardware-coordinated multiprocessing, and production-testability requirements.

Availability

70V658S10DR is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and avionics applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-critical designs.

Supply support for 70V658S10DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 70V658S10DR belongs to IDT's high-speed asynchronous dual-port SRAM product line, designed specifically for real-time, low-latency inter-processor communication in systems demanding deterministic arbitration, mixed-voltage interoperability, and production-test readiness.

FAQ

What is the memory organization and density of the 70V658S10DR?

The 70V658S10DR is organized as 64K × 36 bits (2.25 Mbit), with 16 address lines (A0–A15) per port. A16 is a no-connect (NC) pin, confirming the 64K word depth. This structure supports efficient 36-bit parallel data transfers on both left and right ports simultaneously, making it ideal for high-throughput buffering applications like packet switching and real-time control.

Does the 70V658S10DR support mixed-voltage I/O operation, and how is it configured?

Yes, the 70V658S10DR supports independent 3.3 V or 2.5 V I/O operation per port. OPTL configures the left port's I/O voltage, and OPTR configures the right port's. When OPTX = VIH (3.3 V), VDDQX must be supplied at 3.3 V; when OPTX = VIL (0 V), VDDQX must be 2.5 V. This enables direct interfacing with heterogeneous logic families without external level shifters.

How does the on-chip semaphore functionality work in the 70V658S10DR?

The 70V658S10DR integrates eight hardware semaphore flags accessible via I/O0–I/O35 using address bits A0–A2. Semaphore access requires CE = VIH and SEM = VIL (opposite of RAM access). The flags support atomic read/write operations, enabling lock-free inter-processor coordination. SEML/SEMR inputs activate the semaphore logic, and INTL/INTR outputs signal flag changes to host processors.

What is the role of the M/S pin in the 70V658S10DR, and how does it affect BUSY behavior?

The M/S pin configures the 70V658S10DR as either a master (M/S = VIH) or slave (M/S = VIL). In master mode, BUSYL/BUSYR are push-pull outputs indicating port contention; in slave mode, they become inputs accepting BUSY signals from a master device. This enables hierarchical arbitration in multi-device MASTER/SLAVE cascades for wider bus implementations.

Is JTAG boundary-scan supported on the 70V658S10DR, and what pins are required?

Yes, the 70V658S10DR fully complies with IEEE 1149.1 JTAG boundary-scan. Required pins are TCK (test clock), TMS (test mode select), TDI (test data in), TDO (test data out), and TRST (test reset). These enable in-system test, interconnect verification, and debug without physical probe access-critical for high-density telecom and avionics PCBs.